Influence of the composition on the electrical properties of amorphous chalcogenides AgGe1+x As1-x S-3

Abstract

This article is devoted to the synthesis and examination of the electrical properties of amorphous chalcogenides AgGe 1 + xAs 1 - xS 3 (x = 0. 1, 0. 4-0. 6, 0. 9) at low temperatures. The studies are performed in order to obtain materials with improved characteristics (an increase in the fraction of the ionic transfer, a decrease in the temperatures of its emergence, and an increase in conductivity). The synthesized compounds are electron-ion conductors. An increase in the Ge fraction leads to an increase in the temperature corresponding to the onset of ionic transport and to a decrease in conductivity. © 2012 Pleiades Publishing, Ltd.