Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/50950
Title: Interaction correction to the conductivity of two-dimensional electron gas in InxGa1-xAs/InP quantum well structure with strong spin-orbit coupling
Authors: Minkov, G. M.
Germanenko, A. V.
Rut, O. E.
Sherstobitov, A. A.
Issue Date: 2012
Citation: Interaction correction to the conductivity of two-dimensional electron gas in InxGa1-xAs/InP quantum well structure with strong spin-orbit coupling / G. M. Minkov, A. V. Germanenko, O. E. Rut, A. A. Sherstobitov // Physical Review B - Condensed Matter and Materials Physics. — 2012. — Vol. 85. — № 12.
Abstract: The electron-electron interaction quantum correction to the conductivity of the gated single quantum well InP/In 0.53Ga 0.47As heterostructures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain the diffusion part of the interaction correction for different values of spin-relaxation rate, 1/τ s. The surprising result is that the spin-relaxation processes do not suppress the interaction correction in the triplet channel and thus do not enhance the correction in magnitude contrary to theoretical expectations even in the case of relatively fast spin relaxation, 1/Tτ s (20-25) 1. © 2012 American Physical Society.
URI: http://hdl.handle.net/10995/50950
https://elar.urfu.ru/handle/10995/50950
SCOPUS ID: 84858055956
WOS ID: 000301184600003
PURE ID: 1086555
ISSN: 1098-0121
1550-235X
DOI: 10.1103/PhysRevB.85.125303
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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