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dc.contributor.authorGolik, V. M.en
dc.contributor.authorKuz'mina, N. V.en
dc.contributor.authorSaprygin, A. V.en
dc.contributor.authorTrepachev, S. A.en
dc.date.accessioned2014-11-29T19:48:02Z-
dc.date.available2014-11-29T19:48:02Z-
dc.date.issued2013-
dc.identifier.citationUsing high resolution and dynamic reaction cell for the improvement of the sensitivity of direct silicon determination in uranium materials by inductively coupled plasma mass spectrometry / V. M. Golik, N. V. Kuz'mina, A. V. Saprygin [et al.] // Journal of Analytical Chemistry. — 2013. — Vol. 68. — № 13. — P. 1142-1150.en
dc.identifier.issn1061-9348-
dc.identifier.other1good_DOI
dc.identifier.other1ac9b6d2-3270-41b1-b3d3-4fe8ade3e14dpure_uuid
dc.identifier.otherhttp://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=84891804554m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/27544-
dc.description.abstractThe paper describes solving the problem of direct silicon determination at low levels in uranium materials, caused by the spectral interferences of polyatomic ions and the high value of blank levels, using inductively coupled plasma mass spectrometry (ICP MS). To overcome the interference problem, two primary techniques have been applied: double focusing high-resolution ICP MS and dynamic reaction cell (DRC) filled with highly reactive ammonia gas. All measurements were performed at high resolution (m/Δm = 4000) on an Element-2 mass spectrometer and pressurized mode of a dynamic reaction cell on an Elan DRC II mass spectrometer. The ways to reducing background levels are investigated. The effects of operating conditions, such as plasma parameters, DRC system original parameters, and uranium matrix influence on the analytical signals of silicon at m/z = 28 have been observed for different mass spectrometer types. The detection limits and the random error characteristics (relative standard deviation) of silicon determination in uranium materials were estimated. © 2013 Pleiades Publishing, Ltd.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.sourceJournal of Analytical Chemistryen
dc.subjectDYNAMIC REACTION CELLen
dc.subjectHIGH-RESOLUTION MASS SPECTROMETERen
dc.subjectINDUCTIVELY COUPLED PLASMA MASS SPECTROMETRYen
dc.subjectSILICONen
dc.subjectURANIUM HEXAFLUORIDEen
dc.subjectWEIGHT FRACTIONen
dc.subjectDYNAMIC REACTION CELLen
dc.subjectERROR CHARACTERISTICSen
dc.subjectHIGH RESOLUTIONen
dc.subjectINDUCTIVELY COUPLED PLASMA MASS SPECTROMETRIES (ICPMS)en
dc.subjectRELATIVE STANDARD DEVIATIONSen
dc.subjectSPECTRAL INTERFERENCEen
dc.subjectURANIUM HEXAFLUORIDESen
dc.subjectWEIGHT FRACTIONSen
dc.subjectCELLSen
dc.subjectCYTOLOGYen
dc.subjectINDUCTIVELY COUPLED PLASMA MASS SPECTROMETRYen
dc.subjectMASS SPECTROMETERSen
dc.subjectURANIUMen
dc.subjectSILICONen
dc.titleUsing high resolution and dynamic reaction cell for the improvement of the sensitivity of direct silicon determination in uranium materials by inductively coupled plasma mass spectrometryen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.typeinfo:eu-repo/semantics/articleen
dc.identifier.doi10.1134/S1061934813130066-
dc.identifier.scopus84891804554-
local.affiliationJSC Urals Electrochemical Combine, ul. Dzerzhinskogo 2, Novouralsk, Sverdlovsk oblast 624130, Russian Federationen
local.affiliationUral Federal University, ul. Mira 19, Yekaterinburg 620002, Russian Federationen
local.contributor.employeeСапрыгин Александр Викторовичru
dc.identifier.wos000328833700008-
local.contributor.departmentФизико-технологический институтru
local.identifier.pure841118-
local.identifier.eid2-s2.0-84891804554-
local.identifier.wosWOS:000328833700008-
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