Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/27095
Title: Electrical properties and local domain structure of LiNbO3 thin film grown by ion beam sputtering method
Authors: Ievlev, V.
Shur, V.
Sumets, M.
Kostyuchenko, A.
Issue Date: 2013
Citation: Electrical properties and local domain structure of LiNbO3 thin film grown by ion beam sputtering method / V. Ievlev, V. Shur, M. Sumets [et al.] // Acta Metallurgica Sinica (English Letters). — 2013. — Vol. 26. — № 5. — P. 630-634.
Abstract: The nanocrystalline ferroelectric LiNbO3 films on (001) Si substrates with the random orientation of polycrystalline grains and the predominance of the grains with lateral orientation of the polar axis were grown using the ion beam sputtering method. The remanent polarization and the coercive field are 12 μC/cm2 and 29 kV/cm, respectively. The thermal annealing leads to the coarsening of the grains. The appearance of the "local texture," which gives rise to the unipolarity of the heterostructures caused by the predominance of the one direction in the vertical component of the spontaneous polarization, is investigated. © The Chinese Society for Metals and Springer-Verlag Berlin Heidelberg.
Keywords: DOMAIN STRUCTURE
FERROELECTRICS
LINBO3 THIN FILMS
DOMAIN STRUCTURE
ION BEAM SPUTTERING METHODS
NANOCRYSTALLINE FERROELECTRICS
POLYCRYSTALLINE GRAINS
RANDOM ORIENTATIONS
SPONTANEOUS POLARIZATIONS
THERMAL-ANNEALING
VERTICAL COMPONENT
CRYSTALS
FERROELECTRIC FILMS
FERROELECTRIC MATERIALS
THIN FILMS
ELECTRIC PROPERTIES
URI: http://hdl.handle.net/10995/27095
SCOPUS ID: 84891812662
WOS ID: 000326205000019
PURE ID: 859866
ISSN: 1006-7191
DOI: 10.1007/s40195-013-0025-z
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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