CNT Thin Films Based on Epoxy Mixtures: Fabrication, Electrical Characteristics

Abstract

The simple scaling of silicon transistors no longer ensures the advantages of high energy efficiency, driving research into nanotechnologies beyond silicon. Specifically, digital circuits based on carbon nanotube (CNT) fieldeffect transistors promise significant advantages in energy efficiency. However, the inability to perfectly control internal nanoscale defects and the variability of carbon nanotubes hinder the realization of very largescale integrated systems. In this study, we investigated a novel method for fabricating transistors based on carbon nanotubes (CNTs) using epoxy mixtures, obtained the electrical properties of the transistors, and compared their microstructure and composition via the scanning electron microscopy. The carrier mobility on epoxy-based transistors was 28.87 cm²/V∙s, and the transistor switching frequency was 2.2 MHz. The samples exhibited electrical and physical stability over an extended period of time. The use of carbon nanotubes in epoxy resin as a conducting layer for transistors opens significant prospects in the field of electronics. The CNT-epoxy mixture technology allows for more flexible and rapid fabrication of thin-film transistors compared to classical methods. However, it is not appropriate to speak of a complete replacement; in this study, we present an alternative method for producing thin-film transistors, which may be of interest for specific purposes.