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dc.contributor.authorMcLeod, J. A.en
dc.contributor.authorLukoyanov, A. V.en
dc.contributor.authorKurmaev, E. Z.en
dc.contributor.authorFinkelstein, L. D.en
dc.contributor.authorMoewes, A.en
dc.date.accessioned2024-04-24T12:38:24Z-
dc.date.available2024-04-24T12:38:24Z-
dc.date.issued2011-
dc.identifier.citationMcLeod, J. A., Lukoyanov, A. V., Kurmaev, E. Z., Finkelstein, L. D., & Moewes, A. (2011). Nature of the electronic states involved in the chemical bonding and superconductivity at high pressure in SnO. JETP Letters, 94(2), 142–146. doi:10.1134/s0021364011140098apa
dc.identifier.issn0021-3640-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://arxiv.org/pdf/1107.3411pdf
dc.identifier.other1duble
dc.identifier.urihttp://elar.urfu.ru/handle/10995/132584-
dc.description.abstractWe have investigated the electronic structure and the Fermi surface of SnO using density functional theory calculations within recently proposed exchange-correlation potential (PBE + mBJ) at ambient conditions and high pressures up to 19.3 GPa where superconductivity was observed. It was found that the Sn valence states (5s, 5p, and 5d are strongly hybridized with the O 2p states, and that our density functional theory calculations are in good agreement with O K-edge X-ray spectroscopy measurements for both occupied and empty states. It was demonstrated that the metallic states appearing under pressure in the semiconducting gap stem due to the transformation of the weakly hybridized O 2p-Sn 5sp subband corresponding to the lowest valence state of Sn in SnO. We discuss the nature of the electronic states involved in chemical bonding and formation of the hole and electron pockets with nesting as a possible way to superconductivity. © 2011 Pleiades Publishing, Ltd.en
dc.description.sponsorship02.740.11.0217; Natural Sciences and Engineering Research Council of Canada, NSERC; Canada Research Chairs; Russian Foundation for Basic Research, РФФИ: 10 02 00046, 10 02 00546, 11 02 00022; Ministry of Education and Science of the Russian Federation, Minobrnauka: 2.1.1/779; Council on grants of the President of the Russian Federation: MK 3376.2011.2en
dc.description.sponsorshipWe acknowledge the support of the Russian Foun dation for Basic Research (project nos. 11 02 00022, 10 02 00046, and 10 02 00546), the Natural Sciences and Engineering Research Council of Canada (NSERC), the Canada Research Chair program, the Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project no. MK 3376.2011.2), the Russian Federal Agency of Science and Innovation (project no. 02.740.11.0217), partial support of the Ministry of Education of Science of the Russian Federation (project no. 2.1.1/779, program “Development of Sci entific Potential of Universities”), and the Russian Federal Agency of Science and Innovation (project no. 02.740.11.0217).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherPleiades Publishing Ltden
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.rightsAll Open Access, Greenscopus
dc.sourceJETP Letters2
dc.sourceJETP Lettersen
dc.titleNature of the electronic states involved in the chemical bonding and superconductivity at high pressure in SnOen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/submittedVersionen
dc.identifier.doi10.1134/S0021364011140098-
dc.identifier.scopus80052872067-
local.contributor.employeeMcLeod, J.A., Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK S7N 5E2, Canadaen
local.contributor.employeeLukoyanov, A.V., Institute of Metal Physics, Russian Academy of Sciences, Ural Division, Yekaterinburg 620990, Russian Federation, Ural Federal University, Yekaterinburg 620002, Russian Federationen
local.contributor.employeeKurmaev, E.Z., Institute of Metal Physics, Russian Academy of Sciences, Ural Division, Yekaterinburg 620990, Russian Federationen
local.contributor.employeeFinkelstein, L.D., Institute of Metal Physics, Russian Academy of Sciences, Ural Division, Yekaterinburg 620990, Russian Federationen
local.contributor.employeeMoewes, A., Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK S7N 5E2, Canadaen
local.description.firstpage142-
local.description.lastpage146-
local.issue2-
local.volume94-
dc.identifier.wos000294960800012-
local.contributor.departmentDepartment of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK S7N 5E2, Canadaen
local.contributor.departmentInstitute of Metal Physics, Russian Academy of Sciences, Ural Division, Yekaterinburg 620990, Russian Federationen
local.contributor.departmentUral Federal University, Yekaterinburg 620002, Russian Federationen
local.identifier.pure8235458-
local.identifier.eid2-s2.0-80052872067-
local.identifier.wosWOS:000294960800012-
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