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dc.contributor.authorAlikin, D.en
dc.contributor.authorAbramov, A.en
dc.contributor.authorTurygin, A.en
dc.contributor.authorIevlev, A.en
dc.contributor.authorPryakhina, V.en
dc.contributor.authorKarpinsky, D.en
dc.contributor.authorHu, Q.en
dc.contributor.authorJin, L.en
dc.contributor.authorShur, V.en
dc.contributor.authorTselev, A.en
dc.contributor.authorKholkin, A.en
dc.date.accessioned2024-04-22T15:53:34Z-
dc.date.available2024-04-22T15:53:34Z-
dc.date.issued2022-
dc.identifier.citationAlikin, D, Abramov, A, Turygin, A, Ievlev, A, Pryakhina, V, Karpinsky, D, Hu, Q, Jin, L, Shur, V, Tselev, A & Kholkin, A 2022, 'Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy', Small Methods, Том. 6, № 2, 2101289. https://doi.org/10.1002/smtd.202101289harvard_pure
dc.identifier.citationAlikin, D., Abramov, A., Turygin, A., Ievlev, A., Pryakhina, V., Karpinsky, D., Hu, Q., Jin, L., Shur, V., Tselev, A., & Kholkin, A. (2022). Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy. Small Methods, 6(2), [2101289]. https://doi.org/10.1002/smtd.202101289apa_pure
dc.identifier.issn2366-9608
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access; Green Open Access3
dc.identifier.otherhttps://ria.ua.pt/bitstream/10773/35964/1/Paper_SSPFM_Submitted_with_Suppl.pdf1
dc.identifier.otherhttps://ria.ua.pt/bitstream/10773/35964/1/Paper_SSPFM_Submitted_with_Suppl.pdfpdf
dc.identifier.urihttp://elar.urfu.ru/handle/10995/132460-
dc.description.abstractMonitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. With an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the composition-sensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics. © 2021 Wiley-VCH GmbHen
dc.description.sponsorshipCICECO-Aveiro Institute of Materialsen
dc.description.sponsorshipU.S. Department of Energy, USDOE, (UIDB/50011/2020, UIDP/50011/2020)en
dc.description.sponsorshipOffice of Science, SCen
dc.description.sponsorshipUT-Battelle, (DE-AC05-00OR22725)en
dc.description.sponsorshipFundação para a Ciência e a Tecnologia, FCTen
dc.description.sponsorshipMinisterio de Educación, Cultura y Deporte, MECDen
dc.description.sponsorshipRussian Science Foundation, RSF, (19‐72‐10076)en
dc.description.sponsorshipEuropean Regional Development Fund, ERDFen
dc.description.sponsorshipUral Federal University, UrFUen
dc.description.sponsorshipFunding text 1: The reported study was funded by the Russian Science Foundation (grant 19-72-10076). The equipment of the Ural Center for Shared Use “Modern nanotechnology” Ural Federal University (Reg.№ 2968) was used. ToF-SIMS characterization was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility, and using instrumentation within ORNL's Materials Characterization Core provided by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy. PFM and XPS data analysis were performed in part by A.Ts. and was supported by the project CICECO-Aveiro Institute of Materials, UIDB/50011/2020 & UIDP/50011/2020, financed by national funds through the FCT/MEC and when appropriate co-financed by FEDER under the PT2020 Partnership Agreement.en
dc.description.sponsorshipFunding text 2: The reported study was funded by the Russian Science Foundation (grant 19‐72‐10076). The equipment of the Ural Center for Shared Use “Modern nanotechnology” Ural Federal University (Reg.№ 2968) was used. ToF‐SIMS characterization was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility, and using instrumentation within ORNL's Materials Characterization Core provided by UT‐Battelle, LLC under Contract No. DE‐AC05‐00OR22725 with the U.S. Department of Energy. PFM and XPS data analysis were performed in part by A.Ts. and was supported by the project CICECO‐Aveiro Institute of Materials, UIDB/50011/2020 & UIDP/50011/2020, financed by national funds through the FCT/MEC and when appropriate co‐financed by FEDER under the PT2020 Partnership Agreement.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherJohn Wiley and Sons Incen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.rightscc-byother
dc.sourceSmall Methods2
dc.sourceSmall Methodsen
dc.subjectBIAS FIELDen
dc.subjectDOMAIN WALLS, HYSTERESIS LOOPS, POLARIZATION REVERSALen
dc.subjectSCREENINGen
dc.subjectVACANCIESen
dc.subjectDEFECTSen
dc.subjectFERROELECTRIC MATERIALSen
dc.subjectHIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPYen
dc.subjectNEUTRON DIFFRACTIONen
dc.subjectSECONDARY ION MASS SPECTROMETRYen
dc.subjectSENSITIVITY ANALYSISen
dc.subjectX RAY PHOTOELECTRON SPECTROSCOPYen
dc.subjectCHARGED DEFECTSen
dc.subjectDEFECT CONCENTRATIONSen
dc.subjectHIGH RESOLUTIONen
dc.subjectLANTHANA DOPEDen
dc.subjectNANO SCALEen
dc.subjectPIEZORESPONSE FORCE MICROSCOPYen
dc.subjectSAMPLE PREPARATIONen
dc.subjectSTRUCTURAL DEFECTen
dc.subjectSTUDY METHODSen
dc.subjectX-RAY TOMOGRAPHYen
dc.subjectSCANNING PROBE MICROSCOPYen
dc.titleExploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopyen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/submittedVersionen
dc.identifier.rsi47551028-
dc.identifier.doi10.1002/smtd.202101289-
dc.identifier.scopus85122073540-
local.contributor.employeeAlikin D., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeAbramov A., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeTurygin A., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeIevlev A., Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, 37830, TN, United Statesen
local.contributor.employeePryakhina V., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeKarpinsky D., Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, 220072, Belarusen
local.contributor.employeeHu Q., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, Chinaen
local.contributor.employeeJin L., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, Chinaen
local.contributor.employeeShur V., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeTselev A., Department of Physics & CICECO, University of Aveiro, Aveiro, 3810-193, Portugalen
local.contributor.employeeKholkin A., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federation, Department of Physics & CICECO, University of Aveiro, Aveiro, 3810-193, Portugal, Piezo- and Magnetoelectric Materials Research & Development Centre, Research School of Chemistry & Applied Biomedical Sciences, National Research Tomsk Polytechnic University, Tomsk, 634050, Russian Federationen
local.description.firstpage175
local.description.lastpage186
local.issue2
local.volume6
dc.identifier.wos000735904000001-
local.contributor.departmentSchool of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.departmentCenter for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, 37830, TN, United Statesen
local.contributor.departmentScientific-Practical Materials Research Centre of NAS of Belarus, Minsk, 220072, Belarusen
local.contributor.departmentElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, Chinaen
local.contributor.departmentDepartment of Physics & CICECO, University of Aveiro, Aveiro, 3810-193, Portugalen
local.contributor.departmentPiezo- and Magnetoelectric Materials Research & Development Centre, Research School of Chemistry & Applied Biomedical Sciences, National Research Tomsk Polytechnic University, Tomsk, 634050, Russian Federationen
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local.identifier.pure29615209-
local.description.order2101289
local.identifier.eid2-s2.0-85122073540-
local.identifier.wosWOS:000735904000001-
local.identifier.pmid34967150
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