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dc.contributor.authorVlasov, E. O.en
dc.contributor.authorChezganov, D. S.en
dc.contributor.authorGimadeeva, L. V.en
dc.contributor.authorUshakov, A. D.en
dc.contributor.authorHu, Q.en
dc.contributor.authorWei, X.en
dc.contributor.authorShur, V. Y.en
dc.contributor.authorШур, В. Я.ru
dc.date.accessioned2024-04-17T17:43:35Z-
dc.date.available2024-04-17T17:43:35Z-
dc.date.issued2018-
dc.identifier.citationVlasov, E. O., Chezganov, D. S., Gimadeeva, L. V., Ushakov, A. D., Wei, X., Shur, V. Y., & Hu, Q. (2018). Domain structure imaging in PMN-PT crystals using channelling-contrast backscattered electron microscopy. IOP Conference Series: Materials Science and Engineering, 443(1), [012038]. https://doi.org/10.1088/1757-899X/443/1/012038apa_pure
dc.identifier.issn1757-8981-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Bronze3
dc.identifier.otherhttps://doi.org/10.1088/1757-899x/443/1/012038pdf
dc.identifier.urihttp://elar.urfu.ru/handle/10995/132170-
dc.description.abstractWe demonstrate the abilities of various SEM techniques for domain imaging in PMN-PT crystals with different compositions. It is shown that the imaging of the chemically etched relief is limited by its destructivity and potential contrast - by low resolution and contrast instability. The optimal parameters of the imaging by backscattered electron channelling allow obtaining the high-resolution domain imaging in PMN-PT crystals. The domain structure change as a result of the phase transition are imaged. The correlation between the images of the surface domain structure obtained by scanning electron microscopy and piezoresponse force microscopy is demonstrated. © 2018 Institute of Physics Publishing. All rights reserved.en
dc.description.sponsorshipRussian Foundation for Basic Research, РФФИ: 17-52-80116-BRICS_a; Ministry of Education and Science of the Russian Federation, Minobrnauka: 3.4993.2017/6.7; Government Council on Grants, Russian Federationen
dc.description.sponsorshipThe equipment of the Ural Centre for Shared Use “Modern Nanotechnology” Ural Federal University has been used. The research was made possible by RFBR (grant 17-52-80116-BRICS_a) and state task of Ministry of education and science of the Russian Federation (No. 3.4993.2017/6.7). The work was partially supported by Government of the Russian Federation (Act 211, Agreement 02.A03.21.0006).en
dc.description.sponsorshipet al.;NT-MDT Spectrum Instruments;Ostec-ArtTool Ltd.;Promenergolab LLC;Russian Foundation for Basic Research;Taylor and Francis Groupen
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherInstitute of Physics Publishingen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceIOP Conference Series: Materials Science and Engineering2
dc.sourceIOP Conference Series: Materials Science and Engineeringen
dc.subjectBACKSCATTERINGen
dc.subjectCRYSTAL STRUCTUREen
dc.subjectELECTRON SCATTERINGen
dc.subjectHYDROPHOBICITYen
dc.subjectSCANNING ELECTRON MICROSCOPYen
dc.subjectSCANNING PROBE MICROSCOPYen
dc.subjectBACKSCATTERED ELECTRON MICROSCOPYen
dc.subjectBACKSCATTERED ELECTRONSen
dc.subjectDOMAIN STRUCTUREen
dc.subjectDOMAIN STRUCTURE IMAGINGen
dc.subjectHIGH RESOLUTIONen
dc.subjectOPTIMAL PARAMETERen
dc.subjectPIEZORESPONSE FORCE MICROSCOPYen
dc.subjectSURFACE DOMAINSen
dc.subjectCRYSTALSen
dc.titleDomain structure imaging in PMN-PT crystals using channelling-contrast backscattered electron microscopyen
dc.typeConference paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.conference.nameInternational Conference on Scanning Probe Microscopy, SPM 2018en
dc.conference.date26 August 2018 through 29 August 2018-
dc.identifier.rsi38644872-
dc.identifier.doi10.1088/1757-899X/443/1/012038-
dc.identifier.scopus85057486276-
local.contributor.employeeVlasov, E.O., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeChezganov, D.S., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeGimadeeva, L.V., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeUshakov, A.D., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.employeeHu, Q., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Centre for Dielectric Research, Xi'An Jiaotong University, Xi'an, 710049, Chinaen
local.contributor.employeeWei, X., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Centre for Dielectric Research, Xi'An Jiaotong University, Xi'an, 710049, Chinaen
local.contributor.employeeShur, V.Y., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.issue1-
local.volume443-
local.contributor.departmentSchool of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federationen
local.contributor.departmentElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Centre for Dielectric Research, Xi'An Jiaotong University, Xi'an, 710049, Chinaen
local.identifier.pure8321532-
local.description.order012038-
local.identifier.eid2-s2.0-85057486276-
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