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  3. Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC
Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/131570
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dc.contributor.authorJanse, van, Vuuren, A.en
dc.contributor.authorMutali, A.en
dc.contributor.authorIbrayeva, A.en
dc.contributor.authorSohatsky, A.en
dc.contributor.authorSkuratov, V.en
dc.contributor.authorAkilbekov, A.en
dc.contributor.authorDauletbekova, A.en
dc.contributor.authorZdorovets, M.en
dc.date.accessioned2024-04-08T11:08:04Z-
dc.date.available2024-04-08T11:08:04Z-
dc.date.issued2022-
dc.identifier.citationJanse van Vuuren, A, Mutali, A, Ibrayeva, A, Sohatsky, A, Skuratov, V, Akilbekov, A, Dauletbekova, A & Zdorovets, M 2022, 'High-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitride', Crystals, Том. 12, № 10, 1410. https://doi.org/10.3390/cryst12101410harvard_pure
dc.identifier.citationJanse van Vuuren, A., Mutali, A., Ibrayeva, A., Sohatsky, A., Skuratov, V., Akilbekov, A., Dauletbekova, A., & Zdorovets, M. (2022). High-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitride. Crystals, 12(10), [1410]. https://doi.org/10.3390/cryst12101410apa_pure
dc.identifier.issn2073-4352-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access; Gold Open Access; Green Open Access3
dc.identifier.otherhttps://www.mdpi.com/2073-4352/12/10/1410/pdf?version=16665988281
dc.identifier.otherhttps://www.mdpi.com/2073-4352/12/10/1410/pdf?version=1666598828pdf
dc.identifier.urihttp://elar.urfu.ru/handle/10995/131570-
dc.description.abstractAt present, silicon nitride is the only nitride ceramic in which latent ion tracks resulting from swift heavy ion irradiation have been observed. Data related to the effects of SHIs on the nanocrystalline form of Si3N4 are sparse. The size of grains is known to play a role in the formation of latent ion tracks and other defects that result from SHI irradiation. In this investigation, the effects of irradiation with high-energy heavy ions on nanocrystalline silicon nitride is studied, using transmission electron microscopy techniques. The results suggest that threshold electronic stopping power, Set, lies within the range 12.3 ± 0.8 keV/nm to 15.2 ± 1.0 keV/nm, based on measurements of track radii. We compared the results to findings for polycrystalline Si3N4 irradiated under similar conditions. Our findings suggest that the radiation stability of silicon nitride is independent of grain size. © 2022 by the authors.en
dc.description.sponsorshipMinistry of Education and Science of the Russian Federation, Minobrnauka, (075-15-2021-709, RF-2296.61321X0037)en
dc.description.sponsorshipMinistry of Education and Science of the Republic of Kazakhstan, (AP08856368)en
dc.description.sponsorshipThis research was funded by the Ministry of Education and Science of the Republic of Kazakhstan (No. AP08856368, “Radiation resistance of ceramics based on nitrides and carbides in relation to the impact of heavy ions with energies of fission fragments”) and was supported by the Ministry of Science and Higher Education of the Russian Federation—contract 075-15-2021-709, unique identifier of the project RF-2296.61321X0037 (equipment maintenance).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherMDPIen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.rightscc-byother
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/unpaywall
dc.sourceCrystals2
dc.sourceCrystalsen
dc.subjectLATENT ION TRACKSen
dc.subjectSI3N4 SILICON NITRIDEen
dc.subjectSWIFT HEAVY IONSen
dc.subjectTRANSMISSION ELECTRON MICROSCOPY (TEM)en
dc.titleHigh-Energy Heavy Ion Tracks in Nanocrystalline Silicon Nitrideen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.3390/cryst12101410-
dc.identifier.scopus85140766688-
local.contributor.employeeJanse van Vuuren A., Centre for HRTEM, Nelson Mandela University, Port Elizabeth, 6001, South Africaen
local.contributor.employeeMutali A., Flerov Laboratory of Nuclear Research, Joint Institute for Nuclear Research, Dubna, 141980, Russian Federation, Institute of Nuclear Physics, Almaty, 050032, Kazakhstan, Physics Techniques, L.N. Gumilyov Eurasian National University, Nur-Sultan, 010000, Kazakhstanen
local.contributor.employeeIbrayeva A., Centre for HRTEM, Nelson Mandela University, Port Elizabeth, 6001, South Africa, Institute of Nuclear Physics, Almaty, 050032, Kazakhstan, Physics Techniques, L.N. Gumilyov Eurasian National University, Nur-Sultan, 010000, Kazakhstanen
local.contributor.employeeSohatsky A., Flerov Laboratory of Nuclear Research, Joint Institute for Nuclear Research, Dubna, 141980, Russian Federationen
local.contributor.employeeSkuratov V., Flerov Laboratory of Nuclear Research, Joint Institute for Nuclear Research, Dubna, 141980, Russian Federation, Institute of Nuclear Physics and Engineering, National Research Nuclear University MEPhI, Moscow, 115409, Russian Federation, Department of Nuclear Physics, Dubna State University, Dubna, 141982, Russian Federationen
local.contributor.employeeAkilbekov A., Physics Techniques, L.N. Gumilyov Eurasian National University, Nur-Sultan, 010000, Kazakhstanen
local.contributor.employeeDauletbekova A., Physics Techniques, L.N. Gumilyov Eurasian National University, Nur-Sultan, 010000, Kazakhstanen
local.contributor.employeeZdorovets M., Institute of Nuclear Physics, Almaty, 050032, Kazakhstan, Physics Techniques, L.N. Gumilyov Eurasian National University, Nur-Sultan, 010000, Kazakhstan, Department of Physics, Ural Federal University, Yekaterinburg, 620075, Russian Federationen
local.issue10-
local.volume12-
dc.identifier.wos000874314300001-
local.contributor.departmentCentre for HRTEM, Nelson Mandela University, Port Elizabeth, 6001, South Africaen
local.contributor.departmentFlerov Laboratory of Nuclear Research, Joint Institute for Nuclear Research, Dubna, 141980, Russian Federationen
local.contributor.departmentInstitute of Nuclear Physics, Almaty, 050032, Kazakhstanen
local.contributor.departmentPhysics Techniques, L.N. Gumilyov Eurasian National University, Nur-Sultan, 010000, Kazakhstanen
local.contributor.departmentInstitute of Nuclear Physics and Engineering, National Research Nuclear University MEPhI, Moscow, 115409, Russian Federationen
local.contributor.departmentDepartment of Nuclear Physics, Dubna State University, Dubna, 141982, Russian Federationen
local.contributor.departmentDepartment of Physics, Ural Federal University, Yekaterinburg, 620075, Russian Federationen
local.identifier.pure31572840-
local.identifier.pureb17092c3-6296-4eba-b3be-6a5a8db0c6d6uuid
local.description.order1410-
local.identifier.eid2-s2.0-85140766688-
local.identifier.wosWOS:000874314300001-
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