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dc.contributor.authorFujii, J.en
dc.contributor.authorGhosh, B.en
dc.contributor.authorVobornik, I.en
dc.contributor.authorBari, Sarkar, A.en
dc.contributor.authorMondal, D.en
dc.contributor.authorKuo, C. -N.en
dc.contributor.authorBocquet, F. C.en
dc.contributor.authorZhang, L.en
dc.contributor.authorBoukhvalov, D. W.en
dc.contributor.authorLue, C. S.en
dc.contributor.authorAgarwal, A.en
dc.contributor.authorPolitano, A.en
dc.date.accessioned2024-04-08T11:07:02Z-
dc.date.available2024-04-08T11:07:02Z-
dc.date.issued2022-
dc.identifier.citationFujii, J, Ghosh, B, Vobornik, I, Sarkar, AB, Mondal, D, Kuo, C-N, Bocquet, FC, Zhang, L, Boukhvalov, DW, Lue, CS, Agarwal, A & Politano, A 2021, 'Mitrofanovite Pt3Te4: A Topological Metal with Termination-Dependent Surface Band Structure and Strong Spin Polarization', ACS Nano, Том. 15, № 9, стр. 14786-14793. https://doi.org/10.1021/acsnano.1c04766harvard_pure
dc.identifier.citationFujii, J., Ghosh, B., Vobornik, I., Sarkar, A. B., Mondal, D., Kuo, C-N., Bocquet, F. C., Zhang, L., Boukhvalov, D. W., Lue, C. S., Agarwal, A., & Politano, A. (2021). Mitrofanovite Pt3Te4: A Topological Metal with Termination-Dependent Surface Band Structure and Strong Spin Polarization. ACS Nano, 15(9), 14786-14793. https://doi.org/10.1021/acsnano.1c04766apa_pure
dc.identifier.issn1936-0851-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access; Green Open Access; Hybrid Gold Open Access3
dc.identifier.otherhttps://pubs.acs.org/doi/pdf/10.1021/acsnano.1c047661
dc.identifier.otherhttps://pubs.acs.org/doi/pdf/10.1021/acsnano.1c04766pdf
dc.identifier.urihttp://elar.urfu.ru/handle/10995/131390-
dc.description.abstractDue to their peculiar quasiparticle excitations, topological metals have high potential for applications in the fields of spintronics, catalysis, and superconductivity. Here, by combining spin- and angle-resolved photoemission spectroscopy, scanning tunneling microscopy/spectroscopy, and density functional theory, we discover surface-termination-dependent topological electronic states in the recently discovered mitrofanovite Pt3Te4. Mitrofanovite crystal is formed by alternating, van der Waals bound layers of Pt2Te2 and PtTe2. Our results demonstrate that mitrofanovite is a topological metal with termination-dependent (i) electronic band structure and (ii) spin texture. Despite their distinct electronic character, both surface terminations are characterized by electronic states exhibiting strong spin polarization with a node at the Γ point and sign reversal across the Γ point, indicating their topological nature and the possibility of realizing two distinct electronic configurations (both of them with topological features) on the surface of the same material. © 2021 The Authors. Published by American Chemical Society.en
dc.description.sponsorshipJiangsu Innovative and Entrepreneurial Talents Projecten
dc.description.sponsorshipNFFA-MURen
dc.description.sponsorshipDepartment of Science and Technology, Ministry of Science and Technology, India, डीएसटीen
dc.description.sponsorshipDeutsche Forschungsgemeinschaft, DFG, (SFB 1083)en
dc.description.sponsorshipNational Natural Science Foundation of China, NSFC, (21775078)en
dc.description.sponsorshipScience and Engineering Research Board, SERBen
dc.description.sponsorshipMinistry of Education and Science of the Russian Federation, Minobrnauka, (FEUZ-2020-0060)en
dc.description.sponsorshipMinistry of Science and Technology, Taiwan, MOST, (MOST-110-2124-M-006-010)en
dc.description.sponsorshipThis work has been partly performed in the framework of the nanoscience foundry and fine analysis (NFFA-MUR Italy Progetti Internazionali) facility. L.Z. acknowledges funding by the National Natural Science Foundation of China (No. 21775078). F.C.B. acknowledges funding by the DFG through the SFB 1083 Structure and Dynamics of Internal Interfaces (Project A 12). D.W.B. acknowledges support by Ministry of Science and Higher Education of the Russian Federation (through the basic part of the government mandate, Project No. FEUZ-2020-0060) and Jiangsu Innovative and Entrepreneurial Talents Project. B.G. and A.A. acknowledge funding from Science and Engineering Research Board (SERB) and Department of Science and Technology (DST), government of India. A.A. thanks the HPC facility at IIT Kanpur for computational resources. C.S.L. and C.N.K. acknowledge funding by the Ministry of Science and Technology of Taiwan (MOST-110-2124-M-006-010).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.rightscc-byother
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/unpaywall
dc.sourceACS Nano2
dc.sourceACS Nanoen
dc.subjectARPESen
dc.subjectSPINTRONICSen
dc.subjectSTM/STSen
dc.subjectSURFACE STATESen
dc.subjectTOPOLOGICAL METALSen
dc.subjectBAND STRUCTUREen
dc.subjectELECTRONIC STATESen
dc.subjectMETALSen
dc.subjectPHOTOELECTRON SPECTROSCOPYen
dc.subjectPLATINUM COMPOUNDSen
dc.subjectSCANNING TUNNELING MICROSCOPYen
dc.subjectSPIN POLARIZATIONen
dc.subjectSURFACE STATESen
dc.subjectTELLURIUM COMPOUNDSen
dc.subjectTEXTURESen
dc.subjectTOPOLOGYen
dc.subjectVAN DER WAALS FORCESen
dc.subjectANGLE RESOLVED PHOTOEMISSION SPECTROSCOPYen
dc.subjectARPESen
dc.subjectHIGH POTENTIALen
dc.subjectQUASIPARTICLES EXCITATIONen
dc.subjectSCANNING TUNNELING MICROSCOPY/SPECTROSCOPYen
dc.subjectSPIN-POLARIZATIONen
dc.subjectSTM/STSen
dc.subjectSURFACE BAND STRUCTURESen
dc.subjectSURFACE TERMINATIONen
dc.subjectTOPOLOGICAL METALen
dc.subjectANGLE RESOLVED PHOTOEMISSION SPECTROSCOPYen
dc.subjectARTICLEen
dc.subjectCRYSTALen
dc.subjectDENSITY FUNCTIONAL THEORYen
dc.subjectPOLARIZATIONen
dc.subjectSCANNING TUNNELING MICROSCOPYen
dc.subjectDENSITY FUNCTIONAL THEORYen
dc.titleMitrofanovite Pt3Te4: A Topological Metal with Termination-Dependent Surface Band Structure and Strong Spin Polarizationen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.rsi47090286-
dc.identifier.doi10.1021/acsnano.1c04766-
dc.identifier.scopus85115098045-
local.contributor.employeeFujii J., CNR-IOM, TASC Laboratory, Area Science Park-Basovizza, Trieste, 34139, Italyen
local.contributor.employeeGhosh B., Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, Indiaen
local.contributor.employeeVobornik I., CNR-IOM, TASC Laboratory, Area Science Park-Basovizza, Trieste, 34139, Italyen
local.contributor.employeeBari Sarkar A., Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, Indiaen
local.contributor.employeeMondal D., CNR-IOM, TASC Laboratory, Area Science Park-Basovizza, Trieste, 34139, Italyen
local.contributor.employeeKuo C.-N., Department of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan, 70101, Taiwan, Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei, 10601, Taiwanen
local.contributor.employeeBocquet F.C., Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich, Jülich, 52425, Germany, Jülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Jülich, 52425, Germanyen
local.contributor.employeeZhang L., College of Chemistry and Chemical Engineering, Qingdao University, Shandong, Qingdao, 266071, Chinaen
local.contributor.employeeBoukhvalov D.W., College of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing, 210037, China, Institute of Physics and Technology, Ural Federal University, Mira Street 19, Ekaterinburg, 620002, Russian Federationen
local.contributor.employeeLue C.S., Department of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan, 70101, Taiwan, Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei, 10601, Taiwanen
local.contributor.employeeAgarwal A., Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, Indiaen
local.contributor.employeePolitano A., INSTM and Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, (AQ), L’Aquila, 67100, Italy, CNR-IMM Istituto per la Microelettronica e Microsistemi, VIII strada 5, Catania, I-95121, Italyen
local.description.firstpage14786-
local.description.lastpage14793-
local.issue9-
local.volume15-
dc.identifier.wos000703553600074-
local.contributor.departmentCNR-IOM, TASC Laboratory, Area Science Park-Basovizza, Trieste, 34139, Italyen
local.contributor.departmentDepartment of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, Indiaen
local.contributor.departmentDepartment of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan, 70101, Taiwanen
local.contributor.departmentPeter Grünberg Institut (PGI-3), Forschungszentrum Jülich, Jülich, 52425, Germanyen
local.contributor.departmentJülich Aachen Research Alliance (JARA), Fundamentals of Future Information Technology, Jülich, 52425, Germanyen
local.contributor.departmentCollege of Chemistry and Chemical Engineering, Qingdao University, Shandong, Qingdao, 266071, Chinaen
local.contributor.departmentCollege of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing, 210037, Chinaen
local.contributor.departmentInstitute of Physics and Technology, Ural Federal University, Mira Street 19, Ekaterinburg, 620002, Russian Federationen
local.contributor.departmentINSTM and Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, (AQ), L’Aquila, 67100, Italyen
local.contributor.departmentCNR-IMM Istituto per la Microelettronica e Microsistemi, VIII strada 5, Catania, I-95121, Italyen
local.contributor.departmentTaiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei, 10601, Taiwanen
local.identifier.pure23823129-
local.identifier.pure5222f5c5-9b79-49ef-9dd9-ff6ee806924buuid
local.identifier.eid2-s2.0-85115098045-
local.identifier.wosWOS:000703553600074-
local.identifier.pmid34472336-
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