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dc.contributor.authorMinkov, G. M.en
dc.contributor.authorAleshkin, V. Ya.en
dc.contributor.authorRut, O. E.en
dc.contributor.authorSherstobitov, A. A.en
dc.contributor.authorDvoretski, S. A.en
dc.contributor.authorMikhailov, N. N.en
dc.contributor.authorGermanenko, A. V.en
dc.date.accessioned2024-04-08T11:07:01Z-
dc.date.available2024-04-08T11:07:01Z-
dc.date.issued2022-
dc.identifier.citationMinkov, GM, Aleshkin, VY, Rut, OE, Sherstobitov, AA, Dvoretski, SA, Mikhailov, NN & Germanenko, AV 2022, 'Transformation of energy spectrum and wave functions on the way from a 2D-to-3D topological insulator in HgTe quantum wells', Physical Review B, Том. 106, № 8, 085301. https://doi.org/10.1103/PhysRevB.106.085301harvard_pure
dc.identifier.citationMinkov, G. M., Aleshkin, V. Y., Rut, O. E., Sherstobitov, A. A., Dvoretski, S. A., Mikhailov, N. N., & Germanenko, A. V. (2022). Transformation of energy spectrum and wave functions on the way from a 2D-to-3D topological insulator in HgTe quantum wells. Physical Review B, 106(8), [085301]. https://doi.org/10.1103/PhysRevB.106.085301apa_pure
dc.identifier.issn2469-9950-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access; Green Open Access3
dc.identifier.otherhttps://arxiv.org/pdf/2112.068381
dc.identifier.otherhttps://arxiv.org/pdf/2112.06838pdf
dc.identifier.urihttp://elar.urfu.ru/handle/10995/131388-
dc.description.abstractA magnetotransport and quantum capacitance of the two-dimensional (2D) electron gas in HgTe/CdxHg1-xTe quantum wells of a width (20.2-46.0) nm are experimentally investigated. It is shown that the first energy subband of spatial quantization is split due to the spin-orbit interaction and the split branches are single spin, therewith the splitting strength increases with the increase of the quantum well width. The electron effective masses in the branches are close to each other within the actual density range. Magnetointersubband oscillations (MISO) observed in the structures under study exhibit the growing amplitude with the increasing electron density that contradicts to the expected decrease of wave-function overlap for the rectangular quantum well. To interpret the data obtained, we have used a self-consistent approach to calculate the electron energy spectrum and the wave function within framework of the kP model. It has been, in particular, shown that the MISO amplitude increase results from the increasing overlap of the wave functions due to their shift from the gate electrode with the gate voltage increase known as a phenomenon of the negative electron polarizability. The results obtained from the transport experiments are supported by quantum capacitance measurements. © 2022 American Physical Society.en
dc.description.sponsorshipMinistry of Education and Science of the Russian Federation, Minobrnauka, (075-15-2020-797, 13.1902.21.0024)en
dc.description.sponsorshipThe research was supported by a grant of Ministry of Science and Higher Education of the Russian Federation, Grant No. 075-15-2020-797 (13.1902.21.0024).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhysical Review B2
dc.sourcePhysical Review Ben
dc.subjectCAPACITANCEen
dc.subjectCAPACITANCE MEASUREMENTen
dc.subjectCARRIER CONCENTRATIONen
dc.subjectELECTRONSen
dc.subjectMERCURY COMPOUNDSen
dc.subjectQUANTUM CHEMISTRYen
dc.subjectSEMICONDUCTOR QUANTUM WELLSen
dc.subjectSPECTROSCOPYen
dc.subjectTELLURIUM COMPOUNDSen
dc.subjectTWO DIMENSIONAL ELECTRON GASen
dc.subject2D-TO-3Den
dc.subjectENERGYen
dc.subjectENERGY SPECTRUMen
dc.subjectENERGY WAVESen
dc.subjectQUANTUM CAPACITANCEen
dc.subjectQUANTUM-WELLSen
dc.subjectSPATIAL QUANTIZATIONen
dc.subjectSUBBANDSen
dc.subjectTOPOLOGICAL INSULATORSen
dc.subjectTWO-DIMENSIONAL (2D) ELECTRON GASen
dc.subjectWAVE FUNCTIONSen
dc.titleTransformation of energy spectrum and wave functions on the way from a 2D-to-3D topological insulator in HgTe quantum wellsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/submittedVersionen
dc.identifier.doi10.1103/PhysRevB.106.085301-
dc.identifier.scopus85136202057-
local.contributor.employeeMinkov G.M., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federation, M. N. Mikheev Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federationen
local.contributor.employeeAleshkin V.Ya., Institute for Physics of Microstructures, RAS, Nizhny Novgorod, 603087, Russian Federation, Lobachevsky University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russian Federationen
local.contributor.employeeRut O.E., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federationen
local.contributor.employeeSherstobitov A.A., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federation, M. N. Mikheev Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federationen
local.contributor.employeeDvoretski S.A., Institute of Semiconductor Physics, RAS, Novosibirsk, 630090, Russian Federationen
local.contributor.employeeMikhailov N.N., Institute of Semiconductor Physics, RAS, Novosibirsk, 630090, Russian Federation, Novosibirsk State University, Novosibirsk, 630090, Russian Federationen
local.contributor.employeeGermanenko A.V., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federationen
local.issue8-
local.volume106-
dc.identifier.wos000879536700001-
local.contributor.departmentSchool of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federationen
local.contributor.departmentM. N. Mikheev Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federationen
local.contributor.departmentInstitute for Physics of Microstructures, RAS, Nizhny Novgorod, 603087, Russian Federationen
local.contributor.departmentLobachevsky University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russian Federationen
local.contributor.departmentInstitute of Semiconductor Physics, RAS, Novosibirsk, 630090, Russian Federationen
local.contributor.departmentNovosibirsk State University, Novosibirsk, 630090, Russian Federationen
local.identifier.pure30850819-
local.identifier.pure7cca7d7e-1358-4fe3-9371-ccd2a1fb8a6euuid
local.description.order085301-
local.identifier.eid2-s2.0-85136202057-
local.identifier.wosWOS:000879536700001-
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