Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс: http://elar.urfu.ru/handle/10995/131347
Полная запись метаданных
Поле DCЗначениеЯзык
dc.contributor.authorSu, S. H.en
dc.contributor.authorChong, C. -W.en
dc.contributor.authorLee, J. -C.en
dc.contributor.authorChen, Y. -C.en
dc.contributor.authorMarchenkov, V. V.en
dc.contributor.authorHuang, J. -C. A.en
dc.date.accessioned2024-04-08T11:06:46Z-
dc.date.available2024-04-08T11:06:46Z-
dc.date.issued2022-
dc.identifier.citationSu, SH, Chong, CW, Lee, JC, Chen, YC, Marchenkov, VV & Huang, JCA 2022, 'Effect of Cu Intercalation Layer on the Enhancement of Spin-to-Charge Conversion in Py/Cu/Bi2Se3', Nanomaterials, Том. 12, № 20, 3687. https://doi.org/10.3390/nano12203687harvard_pure
dc.identifier.citationSu, S. H., Chong, C. W., Lee, J. C., Chen, Y. C., Marchenkov, V. V., & Huang, J. C. A. (2022). Effect of Cu Intercalation Layer on the Enhancement of Spin-to-Charge Conversion in Py/Cu/Bi2Se3. Nanomaterials, 12(20), [3687]. https://doi.org/10.3390/nano12203687apa_pure
dc.identifier.issn2079-4991-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access; Gold Open Access; Green Open Access3
dc.identifier.otherhttps://www.mdpi.com/2079-4991/12/20/3687/pdf?version=16667705661
dc.identifier.otherhttps://www.mdpi.com/2079-4991/12/20/3687/pdf?version=1666770566pdf
dc.identifier.urihttp://elar.urfu.ru/handle/10995/131347-
dc.description.abstractThe spin-to-charge conversion in Permalloy (Py)/Cu/Bi2Se3 is tunable by changing the Cu layer thickness. The conversion rate was studied using the spin pumping technique. The inverse Edelstein effect (IEE) length λIEE is found to increase up to ~2.7 nm when a 7 nm Cu layer is introduced. Interestingly, the maximized λIEE is obtained when the effective spin-mixing conductance (and thus Js) is decreased due to Cu insertion. The monotonic increase in λIEE with decreasing Js suggests that the IEE relaxation time (τ) is enhanced due to the additional tunnelling barrier (Cu layer) that limits the interfacial transmission rate. The results demonstrate the importance of interface engineering in the magnetic heterostructure of Py/topological insulators (TIs), the key factor in optimizing spin-to-charge conversion efficiency. © 2022 by the authors.en
dc.description.sponsorshipMinistry of Science and Technology, Taiwan, MOST, (109-2112-M-006-019-MY3, 110-2124-M-006-008, 111-2124-M-006-008)en
dc.description.sponsorshipWe would like to acknowledge the financial support from the Taiwan Ministry of Science and Technology under contracts MOST Grants No. 111-2124-M-006-008, 110-2124-M-006-008, and 109-2112-M-006-019-MY3.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherMDPIen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.rightscc-byother
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/unpaywall
dc.sourceNanomaterials2
dc.sourceNanomaterialsen
dc.subjectINVERSE EDELSTEIN EFFECTen
dc.subjectSPIN PUMPINGen
dc.subjectSPIN-TO-CHARGE CONVERSIONen
dc.subjectTOPOLOGICAL INSULATORen
dc.titleEffect of Cu Intercalation Layer on the Enhancement of Spin-to-Charge Conversion in Py/Cu/Bi2Se3en
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.3390/nano12203687-
dc.identifier.scopus85140915311-
local.contributor.employeeSu S.H., Department of Physics, National Cheng Kung University, Tainan, 701401, Taiwanen
local.contributor.employeeChong C.-W., Department of Physics, National Cheng Kung University, Tainan, 701401, Taiwanen
local.contributor.employeeLee J.-C., Department of Physics, National Cheng Kung University, Tainan, 701401, Taiwan, Sheng Chuang Technology Company, Taichung, 407330, Taiwanen
local.contributor.employeeChen Y.-C., Department of Physics, National Cheng Kung University, Tainan, 701401, Taiwanen
local.contributor.employeeMarchenkov V.V., M.N. Miheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation, Institute of Physics and Technology, Ural Federal University, Ekaterinburg, 620002, Russian Federationen
local.contributor.employeeHuang J.-C.A., Department of Physics, National Cheng Kung University, Tainan, 701401, Taiwan, Department of Applied Physics, National University of Kaohsiung, Kaohsiung, 811726, Taiwan, Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei, 10622, Taiwanen
local.issue20-
local.volume12-
dc.identifier.wos000875166600001-
local.contributor.departmentDepartment of Physics, National Cheng Kung University, Tainan, 701401, Taiwanen
local.contributor.departmentSheng Chuang Technology Company, Taichung, 407330, Taiwanen
local.contributor.departmentM.N. Miheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federationen
local.contributor.departmentInstitute of Physics and Technology, Ural Federal University, Ekaterinburg, 620002, Russian Federationen
local.contributor.departmentDepartment of Applied Physics, National University of Kaohsiung, Kaohsiung, 811726, Taiwanen
local.contributor.departmentTaiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei, 10622, Taiwanen
local.identifier.pure31570227-
local.identifier.pure76b8e06a-d511-4d74-be9c-c7783743729euuid
local.description.order3687-
local.identifier.eid2-s2.0-85140915311-
local.identifier.wosWOS:000875166600001-
Располагается в коллекциях:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

Файлы этого ресурса:
Файл Описание РазмерФормат 
2-s2.0-85140915311.pdf1,57 MBAdobe PDFПросмотреть/Открыть


Лицензия на ресурс: Лицензия Creative Commons Creative Commons