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Поле DC | Значение | Язык |
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dc.contributor.author | Marchenkov, V. V. | en |
dc.contributor.author | Lukoyanov, A. V. | en |
dc.contributor.author | Baidak, S. T. | en |
dc.contributor.author | Perevalova, A. N. | en |
dc.contributor.author | Fominykh, B. M. | en |
dc.contributor.author | Naumov, S. V. | en |
dc.contributor.author | Marchenkova, E. B. | en |
dc.date.accessioned | 2024-04-05T16:35:01Z | - |
dc.date.available | 2024-04-05T16:35:01Z | - |
dc.date.issued | 2023 | - |
dc.identifier.citation | Marchenkov, VV, Lukoyanov, AV, Baidak, ST, Perevalova, AN, Fominykh, BM, Naumov, SV & Marchenkova, EB 2023, 'Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals', Micromachines, Том. 14, № 10, 1888. https://doi.org/10.3390/mi14101888 | harvard_pure |
dc.identifier.citation | Marchenkov, V. V., Lukoyanov, A. V., Baidak, S. T., Perevalova, A. N., Fominykh, B. M., Naumov, S. V., & Marchenkova, E. B. (2023). Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals. Micromachines, 14(10), [1888]. https://doi.org/10.3390/mi14101888 | apa_pure |
dc.identifier.issn | 2072-666X | - |
dc.identifier.other | Final | 2 |
dc.identifier.other | All Open Access, Gold, Green | 3 |
dc.identifier.other | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85175032415&doi=10.3390%2fmi14101888&partnerID=40&md5=83f631b237bcbf12989c11ee329ce262 | 1 |
dc.identifier.other | https://www.mdpi.com/2072-666X/14/10/1888/pdf?version=1696067690 | |
dc.identifier.uri | http://elar.urfu.ru/handle/10995/130888 | - |
dc.description.abstract | The electrical resistivity and the Hall effect of topological insulator Bi2Te3 and Bi2Se3 single crystals were studied in the temperature range from 4.2 to 300 K and in magnetic fields up to 10 T. Theoretical calculations of the electronic structure of these compounds were carried out in density functional approach, taking into account spin–orbit coupling and crystal structure data for temperatures of 5, 50 and 300 K. A clear correlation was found between the density of electronic states at the Fermi level and the current carrier concentration. In the case of Bi2Te3, the density of states at the Fermi level and the current carrier concentration increase with increasing temperature, from 0.296 states eV−1 cell−1 (5 K) to 0.307 states eV−1 cell−1 (300 K) and from 0.9 × 1019 cm−3 (5 K) to 2.6 × 1019 cm−3 (300 K), respectively. On the contrary, in the case of Bi2Se3, the density of states decreases with increasing temperature, from 0.201 states eV−1 cell−1 (5 K) to 0.198 states eV−1 cell−1 (300 K), and, as a consequence, the charge carrier concentration also decreases from 2.94 × 1019 cm−3 (5 K) to 2.81 × 1019 cm−3 (300 K). © 2023 by the authors. | en |
dc.description.sponsorship | Ministry of Education and Science of the Russian Federation, Minobrnauka: 122021000036-3, 122021000039-4; Russian Science Foundation, RSF: 22-42-02021 | en |
dc.description.sponsorship | This research was supported by Russian Science Foundation (project No. 22-42-02021) for the experimental and theoretical studies in Section 1, Section 2, Section 3.1 and Section 3.2 ; the analysis of current carrier concentration (Section 3.3) was done within the state assignment of Ministry of Science and Higher Education of the Russian Federation (themes «Spin», № 122021000036-3 and «Electron», № 122021000039-4). | en |
dc.format.mimetype | application/pdf | en |
dc.language.iso | en | en |
dc.publisher | Multidisciplinary Digital Publishing Institute (MDPI) | en |
dc.relation | info:eu-repo/grantAgreement/RSF//22-42-02021 | en |
dc.rights | info:eu-repo/semantics/openAccess | en |
dc.rights | cc-by | other |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | unpaywall |
dc.source | Micromachines | 2 |
dc.source | Micromachines | en |
dc.subject | 2D MATERIALS | en |
dc.subject | BI2SE3 | en |
dc.subject | BI2TE3 | en |
dc.subject | CURRENT CARRIER CONCENTRATION | en |
dc.subject | DFT | en |
dc.subject | ELECTRONIC STRUCTURE | en |
dc.subject | HALL EFFECT | en |
dc.subject | MATERIALS INFORMATICS | en |
dc.subject | TOPOLOGICAL INSULATOR | en |
dc.subject | TOPOLOGICAL RESISTIVITY | en |
dc.subject | BISMUTH COMPOUNDS | en |
dc.subject | CARRIER CONCENTRATION | en |
dc.subject | CELLS | en |
dc.subject | CRYSTAL STRUCTURE | en |
dc.subject | CYTOLOGY | en |
dc.subject | DENSITY FUNCTIONAL THEORY | en |
dc.subject | ELECTRIC INSULATORS | en |
dc.subject | FERMI LEVEL | en |
dc.subject | HALL EFFECT | en |
dc.subject | SELENIUM COMPOUNDS | en |
dc.subject | SINGLE CRYSTALS | en |
dc.subject | TELLURIUM COMPOUNDS | en |
dc.subject | TEMPERATURE | en |
dc.subject | TOPOLOGICAL INSULATORS | en |
dc.subject | TOPOLOGY | en |
dc.subject | 2D MATERIAL | en |
dc.subject | CURRENT CARRIER CONCENTRATION | en |
dc.subject | CURRENT CARRIERS | en |
dc.subject | DENSITIES OF STATE | en |
dc.subject | DFT | en |
dc.subject | ELECTRONIC.STRUCTURE | en |
dc.subject | INCREASING TEMPERATURES | en |
dc.subject | MATERIAL INFORMATICS | en |
dc.subject | TOPOLOGICAL INSULATORS | en |
dc.subject | TOPOLOGICAL RESISTIVITY | en |
dc.subject | ELECTRONIC STRUCTURE | en |
dc.title | Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals | en |
dc.type | Article | en |
dc.type | info:eu-repo/semantics/article | en |
dc.type | |info:eu-repo/semantics/publishedVersion | en |
dc.identifier.doi | 10.3390/mi14101888 | - |
dc.identifier.scopus | 85175032415 | - |
local.contributor.employee | Marchenkov, V.V., M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620108, Russian Federation, Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, Ekaterinburg, 620002, Russian Federation | en |
local.contributor.employee | Lukoyanov, A.V., M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620108, Russian Federation, Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, Ekaterinburg, 620002, Russian Federation | en |
local.contributor.employee | Baidak, S.T., M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620108, Russian Federation, Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, Ekaterinburg, 620002, Russian Federation | en |
local.contributor.employee | Perevalova, A.N., M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620108, Russian Federation | en |
local.contributor.employee | Fominykh, B.M., M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620108, Russian Federation, Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, Ekaterinburg, 620002, Russian Federation | en |
local.contributor.employee | Naumov, S.V., M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620108, Russian Federation | en |
local.contributor.employee | Marchenkova, E.B., M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620108, Russian Federation | en |
local.issue | 10 | - |
local.volume | 14 | - |
dc.identifier.wos | 001099343200001 | - |
local.contributor.department | M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620108, Russian Federation | en |
local.contributor.department | Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, Ekaterinburg, 620002, Russian Federation | en |
local.identifier.pure | 47878926 | - |
local.description.order | 1888 | - |
local.identifier.eid | 2-s2.0-85175032415 | - |
local.fund.rsf | 22-42-02021 | - |
local.identifier.wos | WOS:001099343200001 | - |
Располагается в коллекциях: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
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2-s2.0-85175032415.pdf | 3,99 MB | Adobe PDF | Просмотреть/Открыть |
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