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dc.contributor.authorChareev, D. A.en
dc.contributor.authorKhan, M. E. H.en
dc.contributor.authorKarmakar, D.en
dc.contributor.authorNekrasov, A. N.en
dc.contributor.authorNickolsky, M. S.en
dc.contributor.authorEriksson, O.en
dc.contributor.authorDelin, A.en
dc.contributor.authorVasiliev, A. N.en
dc.contributor.authorAbdel-Hafiez, M.en
dc.date.accessioned2024-04-05T16:18:28Z-
dc.date.available2024-04-05T16:18:28Z-
dc.date.issued2023-
dc.identifier.citationChareev, DA, Khan, MEH, Karmakar, D, Nekrasov, AN, Nickolsky, MS, Eriksson, O, Delin, A, Vasiliev, AN & Abdel-Hafiez, M 2023, 'Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides', Crystal Growth and Design, Том. 23, № 4, стр. 2287-2294. https://doi.org/10.1021/acs.cgd.2c01318harvard_pure
dc.identifier.citationChareev, D. A., Khan, M. E. H., Karmakar, D., Nekrasov, A. N., Nickolsky, M. S., Eriksson, O., Delin, A., Vasiliev, A. N., & Abdel-Hafiez, M. (2023). Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides. Crystal Growth and Design, 23(4), 2287-2294. https://doi.org/10.1021/acs.cgd.2c01318apa_pure
dc.identifier.issn1528-7483-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Hybrid Gold, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85151269182&doi=10.1021%2facs.cgd.2c01318&partnerID=40&md5=33dd73165977a14c8712fa5b3e2dccff1
dc.identifier.otherhttps://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c01318pdf
dc.identifier.urihttp://elar.urfu.ru/handle/10995/130317-
dc.description.abstractTransition metal dichalcogenides (TMDs) are an emergent class of low-dimensional materials with growing applications in the field of nanoelectronics. However, efficient methods for synthesizing large monocrystals of these systems are still lacking. Here, we describe an efficient synthetic route for a large number of TMDs that were obtained in quartz glass ampoules by sulfuric vapor transport and liquid sulfur. Unlike the sublimation technique, the metal enters the gas phase in the form of molecules, hence containing a greater amount of sulfur than the growing crystal. We have investigated the physical properties for a selection of these crystals and compared them to state-of-the-art findings reported in the literature. The acquired electronic properties features demonstrate the overall high quality of single crystals grown in this work as exemplified by CoS2, ReS2, NbS2, and TaS2. This new approach to synthesize high-quality TMD single crystals can alleviate many material quality concerns and is suitable for emerging electronic devices. © 2023 The Authors. Published by American Chemical Society.en
dc.description.sponsorshipEuropean Research Council, ERC: 854843-FASTCORR; Stiftelsen för Strategisk Forskning, SSF; National Science Council, NSC: 2018-05973; Knut och Alice Wallenbergs Stiftelse: 2018.0060; Vetenskapsrådet, VR: 2018-05393, VR 2015-04608, VR 2016-05980, VR 2019-05304; Energimyndigheten; Council on grants of the President of the Russian Federation: NSh-2394.2022.1.5en
dc.description.sponsorshipM.A.-H. acknowledges the financial support from the Swedish Research Council (VR) under project No. 2018-05393. D.A.C. acknowledges the financial support by the Grant of the President of the Russian Federation for the state support of the leading scientific schools of the Russian Federation No. NSh-2394.2022.1.5. O.E. acknowledges the financial support by the Knut and Alice Wallenberg Foundation through Grant No.2018.0060. O.E. also acknowledges the support by the Swedish Research Council (VR), the Foundation for Strategic Research (SSF), the Swedish Energy Agency (Energimyndigheten), the European Research Council (854843-FASTCORR), eSSENCE, and StandUP. The computations/data handling was enabled by resources provided by the Swedish National Infrastructure for Computing (SNIC). Financial support from Vetenskapsrådet (Grant Nos. VR 2015-04608, VR 2016-05980, and VR 2019-05304) and the Knut and Alice Wallenberg Foundation (Grant No. 2018.0060) is acknowledged. Computations were enabled by resources provided by the Swedish National Infrastructure for Computing (SNIC) at PDC and NSC, partially funded by the Swedish Research Council through grant agreement no. 2018-05973.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.rightscc-byother
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/unpaywall
dc.sourceCrystal Growth & Design2
dc.sourceCrystal Growth and Designen
dc.subjectELECTRONIC PROPERTIESen
dc.subjectSINGLE CRYSTALSen
dc.subjectSULFURen
dc.subjectDICHALCOGENIDESen
dc.subjectGLASS AMPOULESen
dc.subjectHIGH QUALITYen
dc.subjectLIQUID SULPHURSen
dc.subjectLOW-DIMENSIONAL MATERIALSen
dc.subjectMONO-CRYSTALSen
dc.subjectQUARTZ GLASSen
dc.subjectSYNTHETIC ROUTESen
dc.subjectVAPOR TRANSPORTen
dc.subjectVAPOR-LIQUIDen
dc.subjectTRANSITION METALSen
dc.titleStable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenidesen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.type|info:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1021/acs.cgd.2c01318-
dc.identifier.scopus85151269182-
local.contributor.employeeChareev, D.A., Institute of Experimental Mineralogy (IEM RAS), Moscow Region, Chernogolovka, 142432, Russian Federation, Kazan Federal University, 18 Kremlyovskaya St, Kazan, 420008, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federationen
local.contributor.employeeKhan, M.E.H., University of Doha for Science and Technology, Doha, 24449, Qataren
local.contributor.employeeKarmakar, D., Department of Physics and Astronomy, Uppsala University, Uppsala, SE-75120, Swedenen
local.contributor.employeeNekrasov, A.N., Institute of Experimental Mineralogy (IEM RAS), Moscow Region, Chernogolovka, 142432, Russian Federationen
local.contributor.employeeNickolsky, M.S., Institute of Geology of Ore Deposits (IGEM RAS), 35, Staromonetnyi per., Moscow, 119017, Russian Federationen
local.contributor.employeeEriksson, O., Department of Physics and Astronomy, Uppsala University, Uppsala, SE-75120, Sweden, School of Science and Technology, Örebro University, Örebro, SE-701 82, Swedenen
local.contributor.employeeDelin, A., Department of Applied Physics, KTH Royal Institute of Technology, Stockholm, SE-106 91, Sweden, Swedish e-Science Research Center, KTH Royal Institute of Technology, Stockholm, SE-10044, Swedenen
local.contributor.employeeVasiliev, A.N., Lomonosov Moscow State University, Moscow, 119991, Russian Federation, National University of Science and Technology “MISiS”, Moscow, 119049, Russian Federationen
local.contributor.employeeAbdel-Hafiez, M., University of Doha for Science and Technology, Doha, 24449, Qatar, Department of Physics and Astronomy, Uppsala University, Uppsala, SE-75120, Swedenen
local.description.firstpage2287-
local.description.lastpage2294-
local.issue4-
local.volume23-
dc.identifier.wos000955393900001-
local.contributor.departmentInstitute of Experimental Mineralogy (IEM RAS), Moscow Region, Chernogolovka, 142432, Russian Federationen
local.contributor.departmentKazan Federal University, 18 Kremlyovskaya St, Kazan, 420008, Russian Federationen
local.contributor.departmentUral Federal University, Ekaterinburg, 620002, Russian Federationen
local.contributor.departmentUniversity of Doha for Science and Technology, Doha, 24449, Qataren
local.contributor.departmentDepartment of Physics and Astronomy, Uppsala University, Uppsala, SE-75120, Swedenen
local.contributor.departmentInstitute of Geology of Ore Deposits (IGEM RAS), 35, Staromonetnyi per., Moscow, 119017, Russian Federationen
local.contributor.departmentSchool of Science and Technology, Örebro University, Örebro, SE-701 82, Swedenen
local.contributor.departmentDepartment of Applied Physics, KTH Royal Institute of Technology, Stockholm, SE-106 91, Swedenen
local.contributor.departmentSwedish e-Science Research Center, KTH Royal Institute of Technology, Stockholm, SE-10044, Swedenen
local.contributor.departmentLomonosov Moscow State University, Moscow, 119991, Russian Federationen
local.contributor.departmentNational University of Science and Technology “MISiS”, Moscow, 119049, Russian Federationen
local.identifier.pure37491835-
local.identifier.eid2-s2.0-85151269182-
local.identifier.wosWOS:000955393900001-
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