Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс:
http://elar.urfu.ru/handle/10995/130196
Полная запись метаданных
Поле DC | Значение | Язык |
---|---|---|
dc.contributor.author | Galashev, A. Y. | en |
dc.contributor.author | Vorob’ev, A. S. | en |
dc.date.accessioned | 2024-04-05T16:15:23Z | - |
dc.date.available | 2024-04-05T16:15:23Z | - |
dc.date.issued | 2023 | - |
dc.identifier.citation | Galashev, AY & Vorob’ev, AS 2023, 'Ab Initio Study of the Electronic Properties of a Silicene Anode Subjected to Transmutation Doping', International Journal of Molecular Sciences, Том. 24, № 3, стр. 2864. https://doi.org/10.3390/ijms24032864 | harvard_pure |
dc.identifier.citation | Galashev, A. Y., & Vorob’ev, A. S. (2023). Ab Initio Study of the Electronic Properties of a Silicene Anode Subjected to Transmutation Doping. International Journal of Molecular Sciences, 24(3), 2864. https://doi.org/10.3390/ijms24032864 | apa_pure |
dc.identifier.issn | 1661-6596 | - |
dc.identifier.other | Final | 2 |
dc.identifier.other | All Open Access, Gold, Green | 3 |
dc.identifier.other | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85147892660&doi=10.3390%2fijms24032864&partnerID=40&md5=6e8a4e4a70254f7896383a4ef0d518a1 | 1 |
dc.identifier.other | https://www.mdpi.com/1422-0067/24/3/2864/pdf?version=1675320668 | |
dc.identifier.uri | http://elar.urfu.ru/handle/10995/130196 | - |
dc.description.abstract | In the present work, the electronic properties of doped silicene located on graphite and nickel substrates were investigated by first-principles calculations method. The results of this modeling indicate that the use of silicene as an anode material instead of bulk silicon significantly improves the characteristics of the electrode, increasing its resistance to cycling and significantly reducing the volume expansion during lithiation. Doping of silicene with phosphorus, in most cases, increases the electrical conductivity of the anode active material, creating conditions for increasing the rate of battery charging. In addition, moderate doping with phosphorus increases the strength of silicene. The behavior of the electronic properties of doped one- and two-layer silicene on a graphite substrate was studied depending on its number and arrangement of phosphorus atoms. The influence of the degree of doping with silicene/Ni heterostructure on its band gap was investigated. We considered the single adsorption of Li, Na, K, and Mg atoms and the polyatomic adsorption of lithium on free-standing silicene. © 2023 by the authors. | en |
dc.description.sponsorship | 122020100205-5, FUME-2022-0005; Ministry of Education and Science of the Russian Federation, Minobrnauka | en |
dc.description.sponsorship | This work was executed in the frame of the scientific theme of Institute of High-Temperature Electrochemistry UB RAS, number FUME-2022-0005, registration number 122020100205-5 and supported by the Ministry of Education and Science of the Russian Federation. | en |
dc.format.mimetype | application/pdf | en |
dc.language.iso | en | en |
dc.publisher | MDPI | en |
dc.rights | info:eu-repo/semantics/openAccess | en |
dc.rights | cc-by | other |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | unpaywall |
dc.source | International Journal of Molecular Sciences | 2 |
dc.source | International Journal of Molecular Sciences | en |
dc.subject | BAND GAP | en |
dc.subject | BOND LENGTH AND ENERGY | en |
dc.subject | FIRST-PRINCIPLE CALCULATIONS | en |
dc.subject | GRAPHITE | en |
dc.subject | MULTILAYER SUBSTRATES | en |
dc.subject | NICKEL | en |
dc.subject | NITROGEN | en |
dc.subject | SILICENE | en |
dc.subject | SPECTRUM OF ELECTRONIC STATES | en |
dc.subject | TRANSMUTATION DOPING | en |
dc.subject | CALCIUM | en |
dc.subject | GRAPHITE | en |
dc.subject | LITHIUM ION | en |
dc.subject | MAGNESIUM | en |
dc.subject | PHOSPHORUS | en |
dc.subject | POTASSIUM | en |
dc.subject | SILICON DERIVATIVE | en |
dc.subject | SODIUM | en |
dc.subject | ZINC | en |
dc.subject | ION | en |
dc.subject | LITHIUM | en |
dc.subject | SILICON | en |
dc.subject | AB INITIO CALCULATION | en |
dc.subject | ADSORPTION | en |
dc.subject | ARTICLE | en |
dc.subject | CHEMICAL REACTION | en |
dc.subject | CONTROLLED STUDY | en |
dc.subject | DELITHIATION | en |
dc.subject | DENSITY | en |
dc.subject | DENSITY FUNCTIONAL THEORY | en |
dc.subject | DIFFUSION COEFFICIENT | en |
dc.subject | ELECTRIC CONDUCTIVITY | en |
dc.subject | HYBRIDIZATION | en |
dc.subject | ION CONDUCTANCE | en |
dc.subject | LITHIATION | en |
dc.subject | MOLECULAR DYNAMICS | en |
dc.subject | MOLECULAR WEIGHT | en |
dc.subject | CHEMISTRY | en |
dc.subject | ELECTRODE | en |
dc.subject | ELECTRONICS | en |
dc.subject | ELECTRODES | en |
dc.subject | ELECTRONICS | en |
dc.subject | GRAPHITE | en |
dc.subject | IONS | en |
dc.subject | LITHIUM | en |
dc.subject | SILICON | en |
dc.title | Ab Initio Study of the Electronic Properties of a Silicene Anode Subjected to Transmutation Doping | en |
dc.type | Article | en |
dc.type | info:eu-repo/semantics/article | en |
dc.type | |info:eu-repo/semantics/publishedVersion | en |
dc.identifier.doi | 10.3390/ijms24032864 | - |
dc.identifier.scopus | 85147892660 | - |
local.contributor.employee | Galashev, A.Y., Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences, Sofia Kovalevskaya Str. 22, Yekaterinburg, 620990, Russian Federation, Institute of Chemical Engineering, Ural Federal University Named after the First President of Russia B.N. Yeltsin, Mira St. 19, Yekaterinburg, 620002, Russian Federation | en |
local.contributor.employee | Vorob’ev, A.S., Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences, Sofia Kovalevskaya Str. 22, Yekaterinburg, 620990, Russian Federation | en |
local.issue | 3 | - |
local.volume | 24 | - |
local.contributor.department | Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences, Sofia Kovalevskaya Str. 22, Yekaterinburg, 620990, Russian Federation | en |
local.contributor.department | Institute of Chemical Engineering, Ural Federal University Named after the First President of Russia B.N. Yeltsin, Mira St. 19, Yekaterinburg, 620002, Russian Federation | en |
local.identifier.pure | 34433348 | - |
local.description.order | 2864 | - |
local.identifier.eid | 2-s2.0-85147892660 | - |
local.identifier.pmid | 36769185 | - |
Располагается в коллекциях: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
Файлы этого ресурса:
Файл | Описание | Размер | Формат | |
---|---|---|---|---|
2-s2.0-85147892660.pdf | 5,9 MB | Adobe PDF | Просмотреть/Открыть |
Лицензия на ресурс: Лицензия Creative Commons