Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/112148
Title: A Simple Way to Control the Filling Degree of the SiO2/Si Template Pores With Nickel
Authors: Yakimchuk, D.
Bundyukova, V.
Borgekov, D.
Zdorovets, M.
Kozlovskiy, A.
Khubezhov, S. A.
Magkoev, T. T.
Bliev, A. P.
Belonogov, E.
Demyanov, S.
Kaniukov, E.
Issue Date: 2018
Publisher: Elsevier Ltd
Elsevier BV
Citation: A Simple Way to Control the Filling Degree of the SiO2/Si Template Pores With Nickel / D. Yakimchuk, V. Bundyukova, D. Borgekov et al. // Materials Today: Proceedings. — 2018. — Vol. 7. — P. 860-865.
Abstract: The paper demonstrates a simple way to control the filling degree of the pores of a silicon oxide template on silicon substrate with nickel. SiO2/Si template was formed using the swift heavy ion tracks technology, which includes irradiation with high energy ions and chemical transformation of the obtained latent tracks into the pores. The preparation of SiO2(Ni)/Si nanostructures with different filling degree of pores in SiO2 with nickel was performed using the electrodeposition method by changing the duration of the process. A study and analysis of the morphology of SiO2(Ni)/Si nanostructures using scanning electron and atomic force microscopy was carried out to determine the nature of pore filling by metal. © 2019 Elsevier Ltd.
Keywords: ELECTRODEPOSITION
ION-TRACK TECHNOLOGY
NICKEL NANOSTRUCTURES
SIO2/SI TEMPLATE
TEMPLATE SYNTHESIS
URI: http://hdl.handle.net/10995/112148
Access: info:eu-repo/semantics/openAccess
Conference name: 2017 Functional Integrated nano Systems, nanoFIS 2017
Conference date: 22 November 2017 through 24 November 2017
SCOPUS ID: 85079704788
PURE ID: 9191968
ISSN: 2214-7853
metadata.dc.description.sponsorship: The authors acknowledge the support of the work in frames of H2020 - MSCA - RISE2017 - 778308 - SPINMULTIFILM Project and the Scientific-technical program ‘Technology-SG’ [project number 3.1.5.1].
CORDIS project card: H2020: 778308
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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