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  3. Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC
Please use this identifier to cite or link to this item: http://elar.urfu.ru/handle/10995/112087
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dc.contributor.authorGruverman, A.en
dc.contributor.authorAuciello, O.en
dc.contributor.authorTokumoto, H.en
dc.date.accessioned2022-05-12T08:27:55Z-
dc.date.available2022-05-12T08:27:55Z-
dc.date.issued1996-
dc.identifier.citationGruverman A. Scanning Force Microscopy for the Study of Domain Structure in Ferroelectric Thin Films / A. Gruverman, O. Auciello, H. Tokumoto // Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. — 1996. — Vol. 14. — Iss. 2. — P. 602-605.en
dc.identifier.issn1071-1023-
dc.identifier.otherAll Open Access, Green3
dc.identifier.urihttp://elar.urfu.ru/handle/10995/112087-
dc.description.abstractA piezoresponse technique based on scanning force microscopy (SFM) has been used for studying domain structure in ferroelectric thin films. Studies were performed on Pb(Zrx,Ti1-x)O3(PZT) thin films produced by a sol-gel method. The piezoresponse images of the PZT films were taken before and after inducing polarization in the films by applying a direct current voltage between the bottom electrode and the SFM tip. Polarization induced patterns were written with 20 V pulses and subsequently imaged by the SFM piezoresponse technique. The effect of the film structure on the imaging resolution of domains is discussed. © 1996 American Vacuum Society.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Institute of Physics Inc.en1
dc.publisherAmerican Vacuum Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ Vac Sci Technol B Microelectron Nanometer Struct2
dc.sourceJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen
dc.subjectCAPACITORSen
dc.subjectCRYSTAL STRUCTUREen
dc.subjectELECTRODESen
dc.subjectIMAGING TECHNIQUESen
dc.subjectLEAD COMPOUNDSen
dc.subjectMICROSCOPIC EXAMINATIONen
dc.subjectPHYSICAL PROPERTIESen
dc.subjectPOLARIZATIONen
dc.subjectSOL-GELSen
dc.subjectTHIN FILMSen
dc.subjectDOMAIN STRUCTUREen
dc.subjectFERROELECTRIC THIN FILMSen
dc.subjectIMAGING RESOLUTIONen
dc.subjectPIEZORESPONSE TECHNIQUEen
dc.subjectSCANNING FORCE MICROSCOPYen
dc.subjectSOL GEL METHODen
dc.subjectFERROELECTRIC MATERIALSen
dc.titleScanning Force Microscopy for the Study of Domain Structure in Ferroelectric Thin Filmsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.scopus0030109284-
local.contributor.employeeGruverman, A., Jt. Res. Center for Atom Technology, Natl. Inst. for Adv. Interdisc. Res., Tsukuba, Ibaraki 305, Japan, Inst. of Phys. and Appl. Mathematics, Ural State University, Ekaterinburg 620083, Russian Federation; Auciello, O., MCNC, Electronics Technologies Division, Research Triangle Park, NC, United States; Tokumoto, H., Jt. Res. Center for Atom Technology, Natl. Inst. for Adv. Interdisc. Res., Tsukuba, Ibaraki 305, Japanen
local.description.firstpage602-
local.description.lastpage605-
local.issue2-
local.volume14-
local.contributor.departmentJt. Res. Center for Atom Technology, Natl. Inst. for Adv. Interdisc. Res., Tsukuba, Ibaraki 305, Japan; MCNC, Electronics Technologies Division, Research Triangle Park, NC, United States; Inst. of Phys. and Appl. Mathematics, Ural State University, Ekaterinburg 620083, Russian Federationen
local.identifier.eid2-s2.0-0030109284-
Appears in Collections:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

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