Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/111926
Title: Structural, Optical and Electronic Properties of the Wide Bandgap Topological Insulator Bi1.1Sb0.9Te2S
Authors: Khatchenko, Y. E.
Yakushev, M. V.
Seibel, C.
Bentmann, H.
Orlita, M.
Golyashov, V.
Ponosov, Y. S.
Stepina, N. P.
Mudriy, A. V.
Kokh, K. A.
Tereshchenko, O. E.
Reinert, F.
Martin, R. W.
Kuznetsova, T. V.
Issue Date: 2022
Publisher: Elsevier Ltd
Elsevier BV
Citation: Structural, Optical and Electronic Properties of the Wide Bandgap Topological Insulator Bi1.1Sb0.9Te2S / Y. E. Khatchenko, M. V. Yakushev, C. Seibel et al. // Journal of Alloys and Compounds. — 2022. — Vol. 890. — 161824.
Abstract: Successful applications of a topological insulator (TI) in spintronics require its bandgap to be wider then in a typical TI and the energy position of the Dirac point in the dispersion relations to be away from the valence and conduction bands. In this study we grew Bi1.1Sb0.9Te2S crystals and examined their elemental composition, structural, optical and electronic properties as well as the electronic band structure. The high structural quality of the grown crystals was established by X-ray diffraction and Raman spectroscopy. Angular resolved photoelectron spectroscopy demonstrated a near parabolic character of the valence and conduction bands and a direct bandgap of 0.36 eV. The dispersion relations also revealed a Dirac cone, confirming the topological insulator nature of this material, with the position of the Dirac point being 100 meV above the valence band maximum. Far infrared reflectivity spectra revealed a plasma edge and two phonon dips. Fitting these spectra with theoretical functions based on the Drude-Lorentz model allows determination of the high frequency dielectric constant (41.3), plasma frequency (936 cm−1) and the frequencies of two infrared phonons (177.7 cm−1 and 77.4 cm−1). © 2021 Elsevier B.V.
Keywords: ARPES
BI1.1SB0.9TE2S
ELECTRONIC STRUCTURE
FAR INFRARED
OPTICAL REFLECTIVITY
TOPOLOGICAL INSULATOR
ANTIMONY COMPOUNDS
BISMUTH COMPOUNDS
CONDUCTION BANDS
CRYSTAL STRUCTURE
DISPERSIONS
ELECTRIC INSULATORS
ELECTRONIC PROPERTIES
ENERGY GAP
PHONONS
QUANTUM THEORY
REFLECTION
SULFUR COMPOUNDS
TELLURIUM COMPOUNDS
TOPOLOGICAL INSULATORS
VALENCE BANDS
X RAY PHOTOELECTRON SPECTROSCOPY
DIRAC POINT
DISPERSION RELATIONS
OPTICAL AND ELECTRONIC PROPERTIES
WIDE-BAND-GAP
URI: http://hdl.handle.net/10995/111926
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85114427301
PURE ID: 23890457
ISSN: 0925-8388
metadata.dc.description.sponsorship: The reported study was funded by RFBR, project number 19-29-12061 . The part of optical research was carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme "Spin" No AAAA-A18-118020290104-2 and No AAAA-A19-119081990020-8 and theme "Electron" No AAAAA18-118020190098-5 ). The study was also supported by the Russian Science Foundation (Project No. 17-12-01047 ) in the part of the crystal growth and state assignment of ISP SB RAS ( 0306–2019-0007 ) and IGM SB RAS. The Raman measurements were partially supported by the grant of the Russian Foundation for Basic Research (Project No. 19-52-18008 ). This work is funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through project-ID 258499086 – SFB 1170 (A01), the Würzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter–ct.qmat Project-ID 390858490 – EXC 2147 .
RSCF project card: 17-12-01047
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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