Interband Mixing between Two-dimensional States Localized in a Surface Quantum Welland Heavy-hole States of the Valence Band in a Narrow-gap Semiconductor

Abstract

Theoretical calculations in the framework of the Kane model have been carried out in order to elucidate the role of interband mixing in forming the energy spectrum of two-dimensional carriers, localized in a surface quantum well in a narrow-gap semiconductor. Of interest was the mixing between two-dimensional (2D) states and heavy-hole states in the volume of a semiconductor. It has been shown that the interband mixing results in two effects: the broadening of 2D energy levels and their shift, which are mostly pronounced for semiconductors with high doping levels. The interband mixing has been found to mostly influence the effective mass of 2D carriers when the concentration of 2D carriers is large, whereas it slightly changes the subband distribution in a wide concentration range. © 1997 The American Physical Society.