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|Title:||Dephasing and Interwell Transitions in Double Quantum Well Heterostructures|
|Authors:||Minkov, G. M.|
Germanenko, A. V.
Rut, O. E.
Sherstobitov, A. A.
Bakarov, A. K.
Dmitriev, D. V.
|Publisher:||American Physical Society (APS)|
|Citation:||Dephasing and Interwell Transitions in Double Quantum Well Heterostructures / G. M. Minkov, A. V. Germanenko, O. E. Rut et al. // Physical Review B - Condensed Matter and Materials Physics. — 2010. — Vol. 82. — Iss. 16. — 165325.|
|Abstract:||The interference quantum correction to the conductivity in the gated double quantum well Alx Ga1-x As/GaAs/ Alx Ga 1-x As structures is studied experimentally. The consistent analysis of the interference induced positive magnetoconductivity allows us to find the interwell transition time τ12 and the electron dephasing time τPdbl;. It has been obtained that τ 12 -1 resonantly depends on the difference between the electron densities in the wells as predicted theoretically. The dephasing time has been determined under the conditions when one and both quantum wells are occupied. The surprising result is that the τ value in the one well does not depend on the occupation of the other one. © 2010 The American Physical Society.|
|metadata.dc.description.sponsorship:||We would like to thank I. S. Burmistrov and I. V. Gornyi for illuminating discussions. This work has been supported in part by the RFBR (Grants No. 08-02-00662, No. 09-02-00789, No. 10-02-00481, and No. 10-02-91336).|
|Appears in Collections:||Научные публикации, проиндексированные в SCOPUS и WoS CC|
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