Dephasing and Interwell Transitions in Double Quantum Well Heterostructures

Abstract

The interference quantum correction to the conductivity in the gated double quantum well Alx Ga1-x As/GaAs/ Alx Ga 1-x As structures is studied experimentally. The consistent analysis of the interference induced positive magnetoconductivity allows us to find the interwell transition time τ12 and the electron dephasing time τPdbl;. It has been obtained that τ 12 -1 resonantly depends on the difference between the electron densities in the wells as predicted theoretically. The dephasing time has been determined under the conditions when one and both quantum wells are occupied. The surprising result is that the τ value in the one well does not depend on the occupation of the other one. © 2010 The American Physical Society.