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Поле DC | Значение | Язык |
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dc.contributor.author | Kovács-Krausz, Z. | en |
dc.contributor.author | Hoque, A. M. | en |
dc.contributor.author | Makk, P. | en |
dc.contributor.author | Szentpéteri, B. | en |
dc.contributor.author | Kocsis, M. | en |
dc.contributor.author | Fülöp, B. | en |
dc.contributor.author | Yakushev, M. V. | en |
dc.contributor.author | Kuznetsova, T. V. | en |
dc.contributor.author | Tereshchenko, O. E. | en |
dc.contributor.author | Kokh, K. A. | en |
dc.contributor.author | Lukács, I. E. | en |
dc.contributor.author | Taniguchi, T. | en |
dc.contributor.author | Watanabe, K. | en |
dc.contributor.author | Dash, S. P. | en |
dc.contributor.author | Csonka, S. | en |
dc.date.accessioned | 2022-05-12T08:17:27Z | - |
dc.date.available | 2022-05-12T08:17:27Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr / Z. Kovács-Krausz, A. M. Hoque, P. Makk et al. // Nano Letters. — 2020. — Vol. 20. — Iss. 7. — P. 4782-4791. | en |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.other | All Open Access, Hybrid Gold, Green | 3 |
dc.identifier.uri | http://elar.urfu.ru/handle/10995/111393 | - |
dc.description.abstract | Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin-orbit crystal BiTeBr for this purpose. Because of its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits. Copyright © 2020 American Chemical Society. | en |
dc.description.sponsorship | The authors thank D. Khokhiriakov and B. Karpiak for their help in device fabrication and measurements, M. G. Beckerné, F. Fülöp, M. Hajdu for their technical support, and T. Fehér, L. Oroszlány, C. Schönenberger, S. O. Valenzuela, A. Virosztek, and I. Zutic for useful discussions. This work has received funding and support from Topograph, CA16218 by COST, the Flag-ERA iSpinText project, the ÚNKP-19-3-II-BME-303 New National Excellence Program of the Ministry of Human Capacities, from the OTKA FK-123894 and OTKA NN-127900 grants, and RFBR project number 19-29-12061. P.M. acknowledges support from the Bolyai Fellowship, the Marie Curie grant, and the National Research, Development, and Innovation Fund of Hungary within the Quantum Technology National Excellence Program (Project Nr. 2017-1.2.1-NKP-2017-00001). S.P.D. acknowledges funding from Swedish Research Council VR No. 2015-06813 and 2016-03658. M.V.Y. and T.V.K. were supported by the Ministry of Science and Higher Education of the Russian Federation (“Spin” No AAAA-A18-118020290104-2) whereas O.E.T. and K.A.K. were supported by the Russian Science Foundation (No 17-12-01047) and Saint Petersburg State University (Project ID 51126254). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan and the CREST (JPMJCR15F3), JST. | en |
dc.format.mimetype | application/pdf | en |
dc.language.iso | en | en |
dc.publisher | American Chemical Society | en1 |
dc.publisher | American Chemical Society (ACS) | en |
dc.relation | info:eu-repo/grantAgreement/RSF//17-12-01047 | en |
dc.rights | info:eu-repo/semantics/openAccess | en |
dc.source | Nano Lett. | 2 |
dc.source | Nano Letters | en |
dc.subject | 2D MATERIALS | en |
dc.subject | ALL-ELECTRIC SPIN CONTROL | en |
dc.subject | GRAPHENE | en |
dc.subject | NONLOCAL SPIN VALVE | en |
dc.subject | POLAR SEMICONDUCTORS | en |
dc.subject | RASHBA-EDELSTEIN EFFECT | en |
dc.subject | SPINTRONICS | en |
dc.subject | BISMUTH COMPOUNDS | en |
dc.subject | BROMINE COMPOUNDS | en |
dc.subject | CRYSTALS | en |
dc.subject | FERROMAGNETIC MATERIALS | en |
dc.subject | GRAPHENE | en |
dc.subject | MAGNETIC DEVICES | en |
dc.subject | MAGNETIC FIELDS | en |
dc.subject | SPIN POLARIZATION | en |
dc.subject | TELLURIUM COMPOUNDS | en |
dc.subject | TEXTURES | en |
dc.subject | ARBITRARY ORIENTATION | en |
dc.subject | EXTERNAL MAGNETIC FIELD | en |
dc.subject | RASHBA SPIN SPLITTING | en |
dc.subject | SPIN TRANSFER TORQUE | en |
dc.subject | SPIN-POLARIZED ELECTRONS | en |
dc.subject | SPIN-VALVE DEVICES | en |
dc.subject | SPINTRONIC APPLICATIONS | en |
dc.subject | SPINTRONIC DEVICE | en |
dc.subject | SPIN ORBIT COUPLING | en |
dc.title | Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr | en |
dc.type | Article | en |
dc.type | info:eu-repo/semantics/article | en |
dc.type | info:eu-repo/semantics/publishedVersion | en |
dc.identifier.doi | 10.1021/acs.nanolett.0c00458 | - |
dc.identifier.scopus | 85088207096 | - |
local.contributor.employee | Kovács-Krausz, Z., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Hoque, A.M., Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden; Makk, P., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Szentpéteri, B., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Kocsis, M., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Fülöp, B., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Yakushev, M.V., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Science, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation, Institute of Solid State Chemistry, Ural Branch, Russian Academy of Science, Ekaterinburg, 620990, Russian Federation; Kuznetsova, T.V., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Science, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation; Tereshchenko, O.E., St. Petersburg State University, St. Petersburg, 198504, Russian Federation, A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russian Federation, Novosibirsk State University, Novosibirsk, 630090, Russian Federation; Kokh, K.A., St. Petersburg State University, St. Petersburg, 198504, Russian Federation, Novosibirsk State University, Novosibirsk, 630090, Russian Federation, V. S. Sobolev Institute of Geology and Mineralogy, Novosibirsk, 630090, Russian Federation; Lukács, I.E., Center for Energy Research, Institute of Technical Physics and Material Science, Budapest, H-1121, Hungary; Taniguchi, T., National Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044, Japan; Watanabe, K., National Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044, Japan; Dash, S.P., Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden; Csonka, S., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary | en |
local.description.firstpage | 4782 | - |
local.description.lastpage | 4791 | - |
local.issue | 7 | - |
local.volume | 20 | - |
dc.identifier.wos | 000548893200012 | - |
local.contributor.department | Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden; M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Science, Ekaterinburg, 620108, Russian Federation; Ural Federal University, Ekaterinburg, 620002, Russian Federation; Institute of Solid State Chemistry, Ural Branch, Russian Academy of Science, Ekaterinburg, 620990, Russian Federation; St. Petersburg State University, St. Petersburg, 198504, Russian Federation; A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russian Federation; Novosibirsk State University, Novosibirsk, 630090, Russian Federation; V. S. Sobolev Institute of Geology and Mineralogy, Novosibirsk, 630090, Russian Federation; Center for Energy Research, Institute of Technical Physics and Material Science, Budapest, H-1121, Hungary; National Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044, Japan | en |
local.identifier.pure | 13389112 | - |
local.identifier.eid | 2-s2.0-85088207096 | - |
local.fund.rsf | 17-12-01047 | - |
local.fund.rffi | 19-29-12061 | - |
local.identifier.wos | WOS:000548893200012 | - |
local.identifier.pmid | 32511931 | - |
Располагается в коллекциях: | Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC |
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