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dc.contributor.authorKovács-Krausz, Z.en
dc.contributor.authorHoque, A. M.en
dc.contributor.authorMakk, P.en
dc.contributor.authorSzentpéteri, B.en
dc.contributor.authorKocsis, M.en
dc.contributor.authorFülöp, B.en
dc.contributor.authorYakushev, M. V.en
dc.contributor.authorKuznetsova, T. V.en
dc.contributor.authorTereshchenko, O. E.en
dc.contributor.authorKokh, K. A.en
dc.contributor.authorLukács, I. E.en
dc.contributor.authorTaniguchi, T.en
dc.contributor.authorWatanabe, K.en
dc.contributor.authorDash, S. P.en
dc.contributor.authorCsonka, S.en
dc.date.accessioned2022-05-12T08:17:27Z-
dc.date.available2022-05-12T08:17:27Z-
dc.date.issued2020-
dc.identifier.citationElectrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr / Z. Kovács-Krausz, A. M. Hoque, P. Makk et al. // Nano Letters. — 2020. — Vol. 20. — Iss. 7. — P. 4782-4791.en
dc.identifier.issn1530-6984-
dc.identifier.otherAll Open Access, Hybrid Gold, Green3
dc.identifier.urihttp://elar.urfu.ru/handle/10995/111393-
dc.description.abstractFerromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin-orbit crystal BiTeBr for this purpose. Because of its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits. Copyright © 2020 American Chemical Society.en
dc.description.sponsorshipThe authors thank D. Khokhiriakov and B. Karpiak for their help in device fabrication and measurements, M. G. Beckerné, F. Fülöp, M. Hajdu for their technical support, and T. Fehér, L. Oroszlány, C. Schönenberger, S. O. Valenzuela, A. Virosztek, and I. Zutic for useful discussions. This work has received funding and support from Topograph, CA16218 by COST, the Flag-ERA iSpinText project, the ÚNKP-19-3-II-BME-303 New National Excellence Program of the Ministry of Human Capacities, from the OTKA FK-123894 and OTKA NN-127900 grants, and RFBR project number 19-29-12061. P.M. acknowledges support from the Bolyai Fellowship, the Marie Curie grant, and the National Research, Development, and Innovation Fund of Hungary within the Quantum Technology National Excellence Program (Project Nr. 2017-1.2.1-NKP-2017-00001). S.P.D. acknowledges funding from Swedish Research Council VR No. 2015-06813 and 2016-03658. M.V.Y. and T.V.K. were supported by the Ministry of Science and Higher Education of the Russian Federation (“Spin” No AAAA-A18-118020290104-2) whereas O.E.T. and K.A.K. were supported by the Russian Science Foundation (No 17-12-01047) and Saint Petersburg State University (Project ID 51126254). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan and the CREST (JPMJCR15F3), JST.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Chemical Societyen1
dc.publisherAmerican Chemical Society (ACS)en
dc.relationinfo:eu-repo/grantAgreement/RSF//17-12-01047en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceNano Lett.2
dc.sourceNano Lettersen
dc.subject2D MATERIALSen
dc.subjectALL-ELECTRIC SPIN CONTROLen
dc.subjectGRAPHENEen
dc.subjectNONLOCAL SPIN VALVEen
dc.subjectPOLAR SEMICONDUCTORSen
dc.subjectRASHBA-EDELSTEIN EFFECTen
dc.subjectSPINTRONICSen
dc.subjectBISMUTH COMPOUNDSen
dc.subjectBROMINE COMPOUNDSen
dc.subjectCRYSTALSen
dc.subjectFERROMAGNETIC MATERIALSen
dc.subjectGRAPHENEen
dc.subjectMAGNETIC DEVICESen
dc.subjectMAGNETIC FIELDSen
dc.subjectSPIN POLARIZATIONen
dc.subjectTELLURIUM COMPOUNDSen
dc.subjectTEXTURESen
dc.subjectARBITRARY ORIENTATIONen
dc.subjectEXTERNAL MAGNETIC FIELDen
dc.subjectRASHBA SPIN SPLITTINGen
dc.subjectSPIN TRANSFER TORQUEen
dc.subjectSPIN-POLARIZED ELECTRONSen
dc.subjectSPIN-VALVE DEVICESen
dc.subjectSPINTRONIC APPLICATIONSen
dc.subjectSPINTRONIC DEVICEen
dc.subjectSPIN ORBIT COUPLINGen
dc.titleElectrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBren
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1021/acs.nanolett.0c00458-
dc.identifier.scopus85088207096-
local.contributor.employeeKovács-Krausz, Z., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Hoque, A.M., Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden; Makk, P., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Szentpéteri, B., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Kocsis, M., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Fülöp, B., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Yakushev, M.V., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Science, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation, Institute of Solid State Chemistry, Ural Branch, Russian Academy of Science, Ekaterinburg, 620990, Russian Federation; Kuznetsova, T.V., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Science, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation; Tereshchenko, O.E., St. Petersburg State University, St. Petersburg, 198504, Russian Federation, A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russian Federation, Novosibirsk State University, Novosibirsk, 630090, Russian Federation; Kokh, K.A., St. Petersburg State University, St. Petersburg, 198504, Russian Federation, Novosibirsk State University, Novosibirsk, 630090, Russian Federation, V. S. Sobolev Institute of Geology and Mineralogy, Novosibirsk, 630090, Russian Federation; Lukács, I.E., Center for Energy Research, Institute of Technical Physics and Material Science, Budapest, H-1121, Hungary; Taniguchi, T., National Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044, Japan; Watanabe, K., National Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044, Japan; Dash, S.P., Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden; Csonka, S., Department of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungaryen
local.description.firstpage4782-
local.description.lastpage4791-
local.issue7-
local.volume20-
dc.identifier.wos000548893200012-
local.contributor.departmentDepartment of Physics, Budapest University of Technology and Economics and Nanoelectronics 'Momentum' Research Group, Hungarian Academy of Sciences, Budafoki ut 8, Budapest, 1111, Hungary; Department of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, SE-41296, Sweden; M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Science, Ekaterinburg, 620108, Russian Federation; Ural Federal University, Ekaterinburg, 620002, Russian Federation; Institute of Solid State Chemistry, Ural Branch, Russian Academy of Science, Ekaterinburg, 620990, Russian Federation; St. Petersburg State University, St. Petersburg, 198504, Russian Federation; A. V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russian Federation; Novosibirsk State University, Novosibirsk, 630090, Russian Federation; V. S. Sobolev Institute of Geology and Mineralogy, Novosibirsk, 630090, Russian Federation; Center for Energy Research, Institute of Technical Physics and Material Science, Budapest, H-1121, Hungary; National Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044, Japanen
local.identifier.pure13389112-
local.identifier.eid2-s2.0-85088207096-
local.fund.rsf17-12-01047-
local.fund.rffi19-29-12061-
local.identifier.wosWOS:000548893200012-
local.identifier.pmid32511931-
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