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dc.contributor.authorKortov, V. S.en
dc.contributor.authorZatsepin, A. F.en
dc.contributor.authorPustovarov, V. A.en
dc.contributor.authorChudinov, A. A.en
dc.contributor.authorBiryukov, D. Yu.en
dc.date.accessioned2022-05-12T08:13:35Z-
dc.date.available2022-05-12T08:13:35Z-
dc.date.issued2007-
dc.identifier.citationSpecific Features of Lluminescence of Oxygen-Deficient Centres in Nanostructured Silicon Dioxide / V. S. Kortov, A. F. Zatsepin, V. A. Pustovarov et al. // Radiation Measurements. — 2007. — Vol. 42. — Iss. 4-5. — P. 891-893.en
dc.identifier.issn1350-4487-
dc.identifier.otherAll Open Access, Green3
dc.identifier.urihttp://elar.urfu.ru/handle/10995/111143-
dc.description.abstractSpecific features of radiative and non-radiative relaxations of oxygen-deficient centres (ODC's) in nanostructured silicon dioxide were studied using optically stimulated electron emission and time-resolved photoluminescence. It was found that modifications of oxygen-deficient centres in the form of surface analogues can exist in nanostructured samples prepared by thermal decomposition of polysilazane in air. Photoluminescence of these centres was efficiently excited in the optical absorption bands of surface Es′-centres and silicon clusters {triple bond, long} SiSiSi {triple bond, long} and could be associated with the intercentre energy transfer during their nonradiative relaxation. Specific features of thermally induced changes in the luminescence characteristics of the defects due to transformation of the structure of silica samples from amorphous to partially crystalline modification were established from analysis of the spectral composition and the decay kinetics of the photoluminescence. © 2007.en
dc.description.sponsorshipThis study was supported by RFBR (Projects Nos. 04-02-96073, 05-02-16448 and 05-02-16530) and the RF Ministry of Education (Project RNP.2.1.1.2948).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevier BVen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceRadiat. Meas.2
dc.sourceRadiation Measurementsen
dc.subjectNANOSTRUCTURED SILICON DIOXIDEen
dc.subjectOXYGEN-DEFICIENT CENTRESen
dc.subjectSILICON CLUSTERSen
dc.subjectABSORPTION SPECTRAen
dc.subjectENERGY TRANSFERen
dc.subjectKINETICSen
dc.subjectNANOSTRUCTURED MATERIALSen
dc.subjectPHOTOLUMINESCENCEen
dc.subjectPYROLYSISen
dc.subjectNANOSTRUCTURED SILICON DIOXIDEen
dc.subjectNONRADIATIVE RELAXATIONen
dc.subjectOXYGEN-DEFICIENT CENTERSen
dc.subjectPOLYSILAZANEen
dc.subjectSILICON CLUSTERSen
dc.subjectSILICAen
dc.titleSpecific Features of Lluminescence of Oxygen-Deficient Centres in Nanostructured Silicon Dioxideen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.scopus34548243723-
local.contributor.employeeKortov, V.S., Department of Physics and Technology, Ural State Technical University, 19 Mira St, Ekaterinburg, 620002, Russian Federation; Zatsepin, A.F., Department of Physics and Technology, Ural State Technical University, 19 Mira St, Ekaterinburg, 620002, Russian Federation; Pustovarov, V.A., Department of Physics and Technology, Ural State Technical University, 19 Mira St, Ekaterinburg, 620002, Russian Federation; Chudinov, A.A., Department of Physics and Technology, Ural State Technical University, 19 Mira St, Ekaterinburg, 620002, Russian Federation; Biryukov, D.Yu., Department of Physics and Technology, Ural State Technical University, 19 Mira St, Ekaterinburg, 620002, Russian Federationen
local.description.firstpage891-
local.description.lastpage893-
local.issue4-5-
local.volume42-
dc.identifier.wos000249832000093-
local.contributor.departmentDepartment of Physics and Technology, Ural State Technical University, 19 Mira St, Ekaterinburg, 620002, Russian Federationen
local.identifier.pure9029738-
local.identifier.eid2-s2.0-34548243723-
local.fund.rffi04-02-96073-
local.fund.rffi05-02-16448-
local.fund.rffi05-02-16530-
local.identifier.wosWOS:000249832000093-
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