Электрофизические свойства пористых пленок пентаоксида тантала

Abstract

In the present work, studies of the effect of carbon on structure and electrical characteristics on the example of other oxide dielectrics used in integrated circuit technology are continued. The experiment was performed on metal-insulator-metal (MDM) structures. As a dielectric, films of tantalum pentoxide obtained by magnetron sputtering of the Ta: C composite target in an oxygen atmosphere were used.