Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс: http://elar.urfu.ru/handle/10995/103235
Полная запись метаданных
Поле DCЗначениеЯзык
dc.contributor.authorMenshakov, A.en
dc.contributor.authorCholakh, S.en
dc.date.accessioned2021-08-31T15:08:31Z-
dc.date.available2021-08-31T15:08:31Z-
dc.date.issued2020-
dc.identifier.citationMenshakov A. Investigation of a new method of the organosilicon compounds activation by a low-energy electron beam for SiCN-coatings deposition / A. Menshakov, S. Cholakh. — DOI 10.1380/ejssnt.2020.38 // e-Journal of Surface Science and Nanotechnology. — 2020. — Vol. 18. — P. 38-40.en
dc.identifier.issn13480391-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Gold3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85097622661&doi=10.1380%2fejssnt.2020.38&partnerID=40&md5=6f06a490c04c9a3d5f82a572e0987e0b
dc.identifier.otherhttps://www.jstage.jst.go.jp/article/ejssnt/18/0/18_38/_pdfm
dc.identifier.urihttp://elar.urfu.ru/handle/10995/103235-
dc.description.abstractThe article describes a new method of organosilicon compounds activation by low energy electron beam for SiCN coatings deposition. The composition of the beam plasma in a hexamethyldisilazane-containing gas medium was studied, and it was shown that the precursor molecules decomposition degree increases with the beam current and nonmonotonically depends on the electron beam energy. The application of a low-energy electron beam for the plasma-chemical vapor decomposition of hexamethyldisilazane and for samples heating up by electron beam to 600°C makes it possible to obtain SiCN-based coatings with a hardness up to 18 GPa and thickness ~1 μm for 1 h. © 2020 The Japan Society of Vacuum and Surface Science. All rights reserved.en
dc.description.sponsorshipThe study was financially supported by the Russian Science Fund, grant No. 18-79-00233.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherThe Japan Society of Vacuum and Surface Scienceen
dc.relationinfo:eu-repo/grantAgreement/RSF//18-79-00233en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcee-J. Surf. Sci. Nanotechnol.2
dc.sourcee-Journal of Surface Science and Nanotechnologyen
dc.subjectLOW-ENERGY ELECTRON BEAMen
dc.subjectPOLYMER DERIVED CERAMICen
dc.subjectSICN COATINGen
dc.subjectACTIVATION ENERGYen
dc.subjectBEAM PLASMA INTERACTIONSen
dc.subjectCOATINGSen
dc.subjectDEPOSITIONen
dc.subjectELECTRON BEAM LITHOGRAPHYen
dc.subjectELECTRON BEAMSen
dc.subjectELECTRONSen
dc.subjectSILICONen
dc.subjectSILICON COMPOUNDSen
dc.subjectBEAM CURRENTSen
dc.subjectCHEMICAL VAPOR DECOMPOSITIONen
dc.subjectCOATINGS DEPOSITIONen
dc.subjectELECTRON BEAM ENERGYen
dc.subjectHEXAMETHYLDISILAZANEen
dc.subjectLOW ENERGY ELECTRON BEAMSen
dc.subjectORGANOSILICON COMPOUNDSen
dc.subjectPRECURSOR MOLECULESen
dc.subjectNITROGEN COMPOUNDSen
dc.titleInvestigation of a new method of the organosilicon compounds activation by a low-energy electron beam for SiCN-coatings depositionen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1380/ejssnt.2020.38-
dc.identifier.scopus85097622661-
local.contributor.employeeMenshakov, A., Institute of Electrophysics of the Ural Branch of the Russian Academy of Sciences, 106 Amundsen St., Yekaterinburg, 620016, Russian Federation, Ural Federal University, 19 Mira St., Yekaterinburg, 620002, Russian Federation
local.contributor.employeeCholakh, S., Ural Federal University, 19 Mira St., Yekaterinburg, 620002, Russian Federation
local.description.firstpage38-
local.description.lastpage40-
local.volume18-
dc.identifier.wos000522784800001-
local.contributor.departmentInstitute of Electrophysics of the Ural Branch of the Russian Academy of Sciences, 106 Amundsen St., Yekaterinburg, 620016, Russian Federation
local.contributor.departmentUral Federal University, 19 Mira St., Yekaterinburg, 620002, Russian Federation
local.identifier.pure12673593-
local.identifier.eid2-s2.0-85097622661-
local.fund.rsf18-79-00233-
local.identifier.wosWOS:000522784800001-
Располагается в коллекциях:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

Файлы этого ресурса:
Файл Описание РазмерФормат 
2-s2.0-85097622661.pdf743,4 kBAdobe PDFПросмотреть/Открыть


Все ресурсы в архиве электронных ресурсов защищены авторским правом, все права сохранены.