Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/103075
Title: A facile low-temperature deposition of Sn-rich tin (II) monosulfide colloid particles
Authors: Kozhevnikova, N. S.
Maskaeva, L. N.
Lekomtseva, E. E.
Pasechnik, L. A.
Chufarov, A. Y.
Lipina, O. A.
Enyashin, A. N.
Markov, V. F.
Issue Date: 2020
Publisher: ITMO University
Citation: A facile low-temperature deposition of Sn-rich tin (II) monosulfide colloid particles / N. S. Kozhevnikova, L. N. Maskaeva, E. E. Lekomtseva, et al. — DOI 10.17586/2220-8054-2020-11-5-529-536 // Nanosystems: Physics, Chemistry, Mathematics. — 2020. — Vol. 11. — Iss. 5. — P. 529-536.
Abstract: A novel, eco-friendly and low temperature synthesis of tin (II) monosulfide colloid particles is described. Chemical bath deposition was successfully applied for the deposition of polynanocrystalline SnS from acidic aqueous solutions. The characterization of the prepared samples was accomplished through elemental analysis, scanning electron microscopy, X-ray powder diffraction, and optical spectroscopy. The composition of tin (II) monosulfide colloids assembled of nanoparticles was found to be Sn-rich. Several simple scenarios for Sn surplus within SnS lattice (Svacancies at S-sublattice, Sn-atoms intercalated between SnS layers and Sn-doping of S-sites) have been analyzed by means of quantum chemical calculations. The potential application of the Sn1+xS colloid particles in solar cells as absorber material and as photocatalyst was demonstrated by measuring the optical properties. © 2020, ITMO University. All rights reserved.
Keywords: CHEMICAL BATH DEPOSITION
OPTICAL BAND GAP
SN-RICH
TIN (II) SULFIDE
URI: http://hdl.handle.net/10995/103075
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85101398355
PURE ID: 20153863
ISSN: 22208054
DOI: 10.17586/2220-8054-2020-11-5-529-536
metadata.dc.description.sponsorship: This work was performed in accordance with the scientific and research plans and state assignment of the ISSC UB RAS (theme AAAA-A19-119031890025-9) and by the Government of the Russian Federation (program 211, project No 02.A03.21.0006).
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