Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102937
Title: Colossal variations in the thermopower and n-p conductivity switching in topological tellurides under pressure
Authors: Morozova, N. V.
Korobeinikov, I. V.
Kurochka, K. V.
Ovsyannikov, S. V.
Issue Date: 2020
Publisher: American Institute of Physics Inc.
Citation: Colossal variations in the thermopower and n-p conductivity switching in topological tellurides under pressure / N. V. Morozova, I. V. Korobeinikov, K. V. Kurochka, et al. — DOI 10.1063/5.0031818 // Journal of Applied Physics. — 2020. — Vol. 128. — Iss. 24. — 245902.
Abstract: Under applied high pressure, the electronic, optical, structural, and other properties of narrow-bandgap telluride semiconductors are subjected to dramatic changes. They can include, for instance, structural and electronic topological transitions. In this work, we investigated the electronic properties of single crystals of three families of tellurides, namely, HgTe, PbTe, and Bi2Te3 by measurements of the thermoelectric power (the Seebeck coefficient) and electrical resistance under high pressure up to 10 GPa. The applied pressure led to spectacular variations in the electronic transport of all three tellurides. We addressed these effects to electronic topological transitions that could be driven by significant narrowing of the bandgaps in the normal-pressure phases of these compounds. In particular, at about 1 GPa, we observed an n-p switching in the conductivity of HgTe, which was well reproducible under multiple pressure cycling. In contrast, in PbTe, we found that an electronic topological transition irreversibly turns the conductivity from p- to n-type. An electronic topological Lifshitz transition in p-type Bi2Te3 crystals with a low carrier concentration enhanced the n-type conductivity in a narrow pressure region about 2-3 GPa and resulted in a double p-n-p conductivity inversion. An irreversible p-n conductivity switching in p-type Bi2Te3 happened already on decompression from a high-pressure phase from about 8 GPa. The stress-controlled p-n inversions of the electrical conductivity in these industrially important telluride materials can potentially find emergent applications in micro- and nanoelectronics. © 2020 Author(s).
Keywords: BISMUTH COMPOUNDS
CARRIER CONCENTRATION
ELECTRONIC PROPERTIES
ENERGY GAP
IV-VI SEMICONDUCTORS
LEAD COMPOUNDS
MERCURY COMPOUNDS
NARROW BAND GAP SEMICONDUCTORS
THERMOELECTRIC POWER PLANTS
TOPOLOGY
CONDUCTIVITY SWITCHING
ELECTRICAL CONDUCTIVITY
ELECTRICAL RESISTANCES
ELECTRONIC TOPOLOGICAL TRANSITION
ELECTRONIC TRANSPORT
HIGH-PRESSURE PHASE
LIFSHITZ TRANSITION
N-TYPE CONDUCTIVITY
TELLURIUM COMPOUNDS
URI: http://hdl.handle.net/10995/102937
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85099204151
PURE ID: 20519818
e4109a3c-6cc8-42a0-8886-aa793e41c0dd
ISSN: 218979
DOI: 10.1063/5.0031818
metadata.dc.description.sponsorship: The research was supported by a grant of Ministry of Science and Higher Education of the Russian Federation No. 075-15-2020-797 (13.1902.21.0024).
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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