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dc.contributor.authorTekin, H. O.en
dc.contributor.authorIssa, S. A. M.en
dc.contributor.authorKilic, G.en
dc.contributor.authorZakaly, H. M. H.en
dc.contributor.authorBadawi, A.en
dc.contributor.authorBilal, G.en
dc.contributor.authorSidek, H. A. A.en
dc.contributor.authorMatori, K. A.en
dc.contributor.authorZaid, M. H. M.en
dc.date.accessioned2021-08-31T15:05:34Z-
dc.date.available2021-08-31T15:05:34Z-
dc.date.issued2021-
dc.identifier.citationCadmium oxide reinforced 46V2O5–46P2O5–(8−x)B2O3–xCdO semiconducting oxide glasses and resistance behaviors against ionizing gamma rays / H. O. Tekin, S. A. M. Issa, G. Kilic, et al. — DOI 10.1016/j.jmrt.2021.06.020 // Journal of Materials Research and Technology. — 2021. — Vol. 13. — P. 2336-2349.en
dc.identifier.issn22387854-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Gold3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85108547525&doi=10.1016%2fj.jmrt.2021.06.020&partnerID=40&md5=39da9416365fff32dd129998a458f04c
dc.identifier.otherhttps://doi.org/10.1016/j.jmrt.2021.06.020m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102830-
dc.description.abstractThis study aimed to determine the contribution of B2O3/CdO substitution on gamma-ray attenuation behaviors of 46V2O5–46P2O5–(8−x)B2O3–xCdO (x = 0–8 mol%) glass system. Accordingly, attenuation coefficients along with half and tenth value layers of five different samples were determined in 0.015 MeV–15 MeV photon energy range. Moreover, effective atomic numbers and effective atomic weight along with exposure and energy absorption buildup factors were determined in same energy range. The result showed that B2O3/CdO substitution has a direct effect on behaviors of studied semiconducting oxide glasses against ionizing gamma-rays. Our findings showed that increasing CdO reinforcement has an obvious impact on gamma-ray attenuation properties especially in the low energy range, where photoelectric effect dominates the photon–matter interaction. Moreover, half-value layer, mean-free path and tenth value layer also decrease with an increase in the content of CdO in the composition. Consequently, VPBCd8 sample with 8% mole CdO additive was reported with the minimum half-value layer, the mean-free path, tenth value layer exposure build-up factor and energy absorption build-up factors. The outcomes would be useful for scientific community to observe the most suitable substitution type along with related semiconducting oxide glass composition to provide the aforementioned shielding properties in terms of needs and utilization requirements. © 2021 The Authorsen
dc.description.sponsorshipThe authors thank Taif University Researchers Supporting Project number (TURSP-2020/12), Taif University, Taif, Saudi Arabia.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevier Editora Ltdaen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ. Mater. Res. Technol.2
dc.sourceJournal of Materials Research and Technologyen
dc.subjectCDOen
dc.subjectMCNPXen
dc.subjectPHY-X PSDen
dc.subjectSEMICONDUCTING OXIDE GLASSESen
dc.subjectSHIELDINGen
dc.subjectATOMSen
dc.subjectCADMIUM COMPOUNDSen
dc.subjectENERGY ABSORPTIONen
dc.subjectGAMMA RAYSen
dc.subjectPHOTOELECTRICITYen
dc.subjectPHOTONSen
dc.subjectREINFORCEMENTen
dc.subjectSHIELDINGen
dc.subjectB$-2$/O$-3$en
dc.subjectCADMIUM OXIDEen
dc.subjectGAMMA-RAY ATTENUATIONen
dc.subjectGAMMA-RAYSen
dc.subjectGLASS SYSTEMSen
dc.subjectMCNPXen
dc.subjectMEAN-FREE PATHen
dc.subjectPHY-X PSDen
dc.subjectRESISTANCE BEHAVIORSen
dc.subjectSEMICONDUCTING OXIDE GLASSen
dc.subjectGLASSen
dc.titleCadmium oxide reinforced 46V2O5–46P2O5–(8−x)B2O3–xCdO semiconducting oxide glasses and resistance behaviors against ionizing gamma raysen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.rsi46850881-
dc.identifier.doi10.1016/j.jmrt.2021.06.020-
dc.identifier.scopus85108547525-
local.contributor.employeeTekin, H.O., Medical Diagnostic Imaging Department, College of Health Sciences, University of Sharjah, Sharjah, 27272, United Arab Emirates, Medical Radiation Research Center (USMERA), Uskudar University, Istanbul, 34672, Turkey
local.contributor.employeeIssa, S.A.M., Physics Department, Faculty of Science, Al-Azhar University, Assiut, 71524, Egypt, Physics Department, Faculty of Science, University of Tabuk, Tabuk, 71451, Saudi Arabia
local.contributor.employeeKilic, G., Department of Physics, Eskisehir Osmangazi University, Eskisehir, 26040, Turkey
local.contributor.employeeZakaly, H.M.H., Physics Department, Faculty of Science, Al-Azhar University, Assiut, 71524, Egypt, Institute of Physics and Technology, Ural Federal University, Ekaterinburg, 620000, Russian Federation
local.contributor.employeeBadawi, A., Department of Physics, College of Science, Taif University, P.O. Box 11099, Taif, 21944, Saudi Arabia, Department of Physics, University College of Turabah, Taif University, P.O. Box 11099, Taif, 21944, Saudi Arabia
local.contributor.employeeBilal, G., Medical Diagnostic Imaging Department, College of Health Sciences, University of Sharjah, Sharjah, 27272, United Arab Emirates
local.contributor.employeeSidek, H.A.A., Department of Physics, University Putra Malaysia, Serdang, Selangor 43400, Malaysia
local.contributor.employeeMatori, K.A., Department of Physics, University Putra Malaysia, Serdang, Selangor 43400, Malaysia
local.contributor.employeeZaid, M.H.M., Department of Physics, University Putra Malaysia, Serdang, Selangor 43400, Malaysia
local.description.firstpage2336-
local.description.lastpage2349-
local.volume13-
dc.identifier.wos000679418500006-
local.contributor.departmentMedical Diagnostic Imaging Department, College of Health Sciences, University of Sharjah, Sharjah, 27272, United Arab Emirates
local.contributor.departmentMedical Radiation Research Center (USMERA), Uskudar University, Istanbul, 34672, Turkey
local.contributor.departmentPhysics Department, Faculty of Science, Al-Azhar University, Assiut, 71524, Egypt
local.contributor.departmentPhysics Department, Faculty of Science, University of Tabuk, Tabuk, 71451, Saudi Arabia
local.contributor.departmentDepartment of Physics, Eskisehir Osmangazi University, Eskisehir, 26040, Turkey
local.contributor.departmentInstitute of Physics and Technology, Ural Federal University, Ekaterinburg, 620000, Russian Federation
local.contributor.departmentDepartment of Physics, College of Science, Taif University, P.O. Box 11099, Taif, 21944, Saudi Arabia
local.contributor.departmentDepartment of Physics, University Putra Malaysia, Serdang, Selangor 43400, Malaysia
local.contributor.departmentDepartment of Physics, University College of Turabah, Taif University, P.O. Box 11099, Taif, 21944, Saudi Arabia
local.identifier.pure22102980-
local.identifier.pure5edfdc38-eaa4-4af2-b99b-302cf6a910c5uuid
local.identifier.eid2-s2.0-85108547525-
local.identifier.wosWOS:000679418500006-
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