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dc.contributor.authorSavchenko, S. S.en
dc.contributor.authorVokhmintsev, A. S.en
dc.contributor.authorWeinstein, I. A.en
dc.date.accessioned2021-08-31T15:05:14Z-
dc.date.available2021-08-31T15:05:14Z-
dc.date.issued2017-
dc.identifier.citationSavchenko S. S. Temperature-induced shift of the exciton absorption band in InP/ZnS quantum dots / S. S. Savchenko, A. S. Vokhmintsev, I. A. Weinstein. — DOI 10.1364/OME.7.000354 // Optical Materials Express. — 2017. — Vol. 7. — Iss. 2. — P. 354-359.en
dc.identifier.issn21593930-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Gold3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85011838482&doi=10.1364%2fOME.7.000354&partnerID=40&md5=621244e30ad7f06d5448b4e06c14af14
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102753-
dc.description.abstractUsing the second-order derivative spectrophotometry method, we have determined the energy of optical transitions of colloidal InP/ZnS core-shell quantum dots at room temperature: E1 = 2.60 eV corresponds to a first exciton absorption peak of the InP core, E2 = 4.70 eV appears to meet the processes in the ZnS shell. We have investigated E1(T) temperature dependence within 6.5 - 296 K range for the first time. The obtained experimental data have been approximated by means of a linear model and Fan's expression. Also, it has been shown that the interaction between excitons and longitudinal acoustic phonons causes the energy E1 to change with temperature. In this case, the peak's FWHM remains invariant and amounts to 0.39 eV, which indicates the inhomogeneous broadening character and a high degree of static disorder in the ensemble of the quantum dots studied. © 2017 Optical Society of America.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherOSA - The Optical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceOpt. Mater. Express2
dc.sourceOptical Materials Expressen
dc.subjectACOUSTICSen
dc.subjectEXCITONSen
dc.subjectII-VI SEMICONDUCTORSen
dc.subjectIII-V SEMICONDUCTORSen
dc.subjectINDIUM PHOSPHIDEen
dc.subjectNANOCRYSTALSen
dc.subjectSEMICONDUCTING INDIUM PHOSPHIDEen
dc.subjectSEMICONDUCTOR QUANTUM DOTSen
dc.subjectTEMPERATURE DISTRIBUTIONen
dc.subjectZINC SULFIDEen
dc.subjectCORE-SHELL QUANTUM DOTSen
dc.subjectEXCITON ABSORPTION PEAKen
dc.subjectEXCITON ABSORPTIONSen
dc.subjectINHOMOGENEOUS BROADENINGen
dc.subjectLONGITUDINAL ACOUSTIC PHONONSen
dc.subjectSECOND ORDER DERIVATIVESen
dc.subjectTEMPERATURE DEPENDENCEen
dc.subjectTEMPERATURE-INDUCEDen
dc.subjectSULFUR COMPOUNDSen
dc.titleTemperature-induced shift of the exciton absorption band in InP/ZnS quantum dotsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1364/OME.7.000354-
dc.identifier.scopus85011838482-
local.contributor.employeeSavchenko, S.S., NANOTECH Centre, Ural Federal University, Mira str., 19, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeVokhmintsev, A.S., NANOTECH Centre, Ural Federal University, Mira str., 19, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeWeinstein, I.A., NANOTECH Centre, Ural Federal University, Mira str., 19, Yekaterinburg, 620002, Russian Federation
local.description.firstpage354-
local.description.lastpage359-
local.issue2-
local.volume7-
dc.identifier.wos000394173200007-
local.contributor.departmentNANOTECH Centre, Ural Federal University, Mira str., 19, Yekaterinburg, 620002, Russian Federation
local.identifier.purea1c6e103-13d8-4283-9c2e-b09dfc1221d5uuid
local.identifier.pure1621225-
local.identifier.eid2-s2.0-85011838482-
local.identifier.wosWOS:000394173200007-
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