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dc.contributor.authorHanisch, J.en
dc.contributor.authorHuang, Y.en
dc.contributor.authorLi, D.en
dc.contributor.authorYuan, J.en
dc.contributor.authorJin, K.en
dc.contributor.authorDong, X.en
dc.contributor.authorTalantsev, E.en
dc.contributor.authorHolzapfel, B.en
dc.contributor.authorZhao, Z.en
dc.date.accessioned2021-08-31T15:04:33Z-
dc.date.available2021-08-31T15:04:33Z-
dc.date.issued2020-
dc.identifier.citationAnisotropy of flux pinning properties in superconducting (Li,Fe)OHFeSe thin films / J. Hanisch, Y. Huang, D. Li, et al. — DOI 10.1088/1361-6668/abb118 // Superconductor Science and Technology. — 2020. — Vol. 33. — Iss. 11. — 114009.en
dc.identifier.issn9532048-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Hybrid Gold, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85094315060&doi=10.1088%2f1361-6668%2fabb118&partnerID=40&md5=e5e23b55984083e212a7d77cf59e4d4a
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102646-
dc.description.abstractThe electrical transport properties of (Li,Fe)OHFeSe films have been investigated in detail. The sharply textured films, prepared by matrix-assisted hydrothermal epitaxy (MHE) on LaAlO3, show a zero-resistance critical temperature T c of ∼42 K, J c values well above 1 MA cm-2 at low temperatures, and a maximum pinning force density F P of ∼100 GN m-3 at 4 K. The activation energy U 0 for thermal depinning of flux lines has been resolved for low magnetic fields, it agrees well with literature data. The coherence lengths and penetration depth were estimated via upper critical field B c2 and self-field J c, respectively, to be ξ ab ∼ 2.7 nm, ξ c = 0.24 nm, and λ ab ∼ 160-200 nm. The layered crystal structure leads to highly anisotropic and two-dimensional electrical properties, including trapping and lock-in of vortices. © 2020 The Author(s). Published by IOP Publishing Ltd.en
dc.description.sponsorshipOriginal content from this work may be used under the terms of the . Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. National Key Research and Development Program of China 2017YFA0303003 2016YFA0300300 Strategic Priority Research Program and Key Research Program of Frontier Sciences of the Chi-nese Academy of Sciences QYZDY-SSW-SLH001 XDB25000000 state assignment of Minobrnauki of Russia Act 211 Government of the Russian Federation 02.A03.21.0006 National Natural Science Foundation of China 11888101 11834016.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherIOP Publishing Ltden
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceSupercond Sci Technol2
dc.sourceSuperconductor Science and Technologyen
dc.subject(LI, FE)OHFESEen
dc.subjectACTIVATION ENERGYen
dc.subjectANISOTROPYen
dc.subjectFE-BASED SUPERCONDUCTORSen
dc.subjectPINNINGen
dc.subjectTHIN FILMSen
dc.subjectACTIVATION ENERGYen
dc.subjectANISOTROPYen
dc.subjectCRYSTAL STRUCTUREen
dc.subjectFLUX PINNINGen
dc.subjectSUPERCONDUCTING FILMSen
dc.subjectTEXTURESen
dc.subjectCRITICAL TEMPERATURESen
dc.subjectELECTRICAL TRANSPORT PROPERTIESen
dc.subjectHYDROTHERMAL EPITAXYen
dc.subjectLAYERED CRYSTAL STRUCTUREen
dc.subjectLOW MAGNETIC FIELDSen
dc.subjectPINNING FORCE DENSITYen
dc.subjectPINNING PROPERTIESen
dc.subjectUPPER CRITICAL FIELDSen
dc.subjectTHIN FILMSen
dc.titleAnisotropy of flux pinning properties in superconducting (Li,Fe)OHFeSe thin filmsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1088/1361-6668/abb118-
dc.identifier.scopus85094315060-
local.contributor.employeeHanisch, J., Karlsruhe Institute of Technology, Institute for Technical Physics, Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, 76344, Germany
local.contributor.employeeHuang, Y., Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, China, University of Chinese, Academy of Sciences, Beijing, China
local.contributor.employeeLi, D., Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, China, University of Chinese, Academy of Sciences, Beijing, China
local.contributor.employeeYuan, J., Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, China, Songshan Lake Materials Laboratory, Guangdong, Dongguan, 523808, China
local.contributor.employeeJin, K., Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, China, University of Chinese, Academy of Sciences, Beijing, China, Songshan Lake Materials Laboratory, Guangdong, Dongguan, 523808, China
local.contributor.employeeDong, X., Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, China, University of Chinese, Academy of Sciences, Beijing, China, Songshan Lake Materials Laboratory, Guangdong, Dongguan, 523808, China
local.contributor.employeeTalantsev, E., M.N. Mikheev Institute of Metal Physics, Ural Branch, Academy of Sciences, 18 S Kovalevskoy St, Ekaterinburg, 620108, Russian Federation, Nanotech Centre, Ural Federal University, 19 Mira St., Ekaterinburg, 620002, Russian Federation
local.contributor.employeeHolzapfel, B., Karlsruhe Institute of Technology, Institute for Technical Physics, Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, 76344, Germany
local.contributor.employeeZhao, Z., Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, China, University of Chinese, Academy of Sciences, Beijing, China, Songshan Lake Materials Laboratory, Guangdong, Dongguan, 523808, China
local.issue11-
local.volume33-
dc.identifier.wos000580435900001-
local.contributor.departmentKarlsruhe Institute of Technology, Institute for Technical Physics, Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, 76344, Germany
local.contributor.departmentBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, China
local.contributor.departmentUniversity of Chinese, Academy of Sciences, Beijing, China
local.contributor.departmentSongshan Lake Materials Laboratory, Guangdong, Dongguan, 523808, China
local.contributor.departmentM.N. Mikheev Institute of Metal Physics, Ural Branch, Academy of Sciences, 18 S Kovalevskoy St, Ekaterinburg, 620108, Russian Federation
local.contributor.departmentNanotech Centre, Ural Federal University, 19 Mira St., Ekaterinburg, 620002, Russian Federation
local.identifier.pure2321c857-77c6-485c-a7b0-1e8d1f38e139uuid
local.identifier.pure20131007-
local.description.order114009-
local.identifier.eid2-s2.0-85094315060-
local.identifier.wosWOS:000580435900001-
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