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|Title:||Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO2|
|Authors:||Green, R. J.|
Zatsepin, D. A.
St. , Onge, D. J.
Kurmaev, E. Z.
Gavrilov, N. V.
Zatsepin, A. F.
|Publisher:||American Institute of Physics Inc.|
|Citation:||Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO2 / R. J. Green, D. A. Zatsepin, D. J. St. Onge, et al. — DOI 10.1063/1.4868297 // Journal of Applied Physics. — 2014. — Vol. 115. — Iss. 10. — 103708.|
|Abstract:||Cobalt and manganese ions are implanted into SiO2 over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO2 valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO2 electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation. © 2014 AIP Publishing LLC.|
ANDERSON IMPURITY MODEL
ELECTRONIC BAND GAPS
OXYGEN DEFICIENT CENTERS
RESONANT X-RAY EMISSION SPECTROSCOPIES
X-RAY STIMULATED LUMINESCENCES
|Appears in Collections:||Научные публикации, проиндексированные в SCOPUS и WoS CC|
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