Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102349
Title: Octahedral conversion of a-SiO2 host matrix by pulsed ion implantation
Authors: Zatsepin, D. A.
Zatsepin, A. F.
Boukhvalov, D. W.
Kurmaev, E. Z.
Gavrilov, N. V.
Skorikov, N. A.
von, Czarnowski, A.
Fitting, H. -J.
Issue Date: 2015
Publisher: Wiley-VCH Verlag
Citation: Octahedral conversion of a-SiO2 host matrix by pulsed ion implantation / D. A. Zatsepin, A. F. Zatsepin, D. W. Boukhvalov, et al. — DOI 10.1002/pssb.201552103 // Physica Status Solidi (B) Basic Research. — 2015. — Vol. 252. — Iss. 10. — P. 2185-2190.
Abstract: The results of measurements of X-ray photoelectron spectra (XPS) of a-SiO2 host material after pulsed implantation with [Mn+] and [Co+, Mn+] ions as well as DFT-calculations are presented. The low-energy shift is found in XPS Si 2p and O 1s core-levels of single [Mn+] and dual [Co+, Mn+] pulsed ion-implanted a-SiO2 (E=30 keV, D=2×1017cm-2) with respect to those of untreated a-SiO2. Similar changes are found in XPS Si 2p and O 1s of stishovite compared to those of quartz. This means that the pulsed ion implantation induces the local high pressure effect that leads to the appearance of SiO6-structural units in a-SiO2 host, forming "stishovite-like" local atomic structure. This process can be described within an electronic bonding transition from the fourfold "quartz-like" to sixfold "stishovite-like" high-pressure phase in the SiO2 host matrix. It is found that such octahedral conversion depends on the fluence and starts with doses higher than D=3×1016cm-2. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords: DENSITY FUNCTIONAL THEORY
ION IMPLANTATION
MANGANESE IONS
PHASE TRANSITION
QUARTZ
X-RAY PHOTOELECTRON SPECTROSCOPY
CHEMICAL BONDS
CRYSTAL ATOMIC STRUCTURE
DENSITY FUNCTIONAL THEORY
HIGH PRESSURE EFFECTS
ION IMPLANTATION
IONS
PHASE TRANSITIONS
PHOTOELECTRON SPECTROSCOPY
PHOTOELECTRONS
PHOTONS
QUARTZ
X RAY PHOTOELECTRON SPECTROSCOPY
DFT CALCULATION
ELECTRONIC BONDING
HIGH-PRESSURE PHASE
LOCAL ATOMIC STRUCTURES
MANGANESE IONS
MEASUREMENTS OF
STRUCTURAL UNIT
X RAY PHOTOELECTRON SPECTRA
SILICON
URI: http://hdl.handle.net/10995/102349
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 84943197803
PURE ID: 295496
bfe37205-2ffb-412d-a9b1-d99ad4a1ebf1
ISSN: 3701972
DOI: 10.1002/pssb.201552103
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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