Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102334
Title: Intrinsic and defect related luminescence in double oxide films of Al-Hf-O system under soft X-ray and VUV excitation
Authors: Pustovarov, V. A.
Smirnova, T. P.
Lebedev, M. S.
Gritsenko, V. A.
Kirm, M.
Issue Date: 2016
Publisher: Elsevier
Citation: Intrinsic and defect related luminescence in double oxide films of Al-Hf-O system under soft X-ray and VUV excitation / V. A. Pustovarov, T. P. Smirnova, M. S. Lebedev, et al. — DOI 10.1016/j.jlumin.2015.10.053 // Journal of Luminescence. — 2016. — Vol. 170. — P. 161-167.
Abstract: Low temperature time-resolved luminescence spectra in the region of 2.5-9.5 eV under soft X-ray excitation as well as time-resolved luminescence excitation spectra in the UV-VUV region (3.7-12 eV) of solid solutions AlxHfyO1-x-y thin films were investigated. The values of x and Al/Hf ratio were determined from X-ray photoelectron srectroscopy data. Hafnia films and films mixed with alumina were grown in a flow-type chemical vapor deposition reactor with argon as a carrier gas. In addition, pure alumina films were prepared by the atomic layer deposition method. A strong emission band with the peak position at 4.4 eV and with the decay time in the μs-range was revealed for pure hafnia films. The emission peak at 7.74 eV with short nanosecond decay kinetics was observed in the luminescence spectra for pure alumina films. These emission bands were ascribed to the radiative decay of self-trapped excitons (an intrinsic luminescence) in pure HfO2 and Al2O3 films, respectively. Along with intrinsic host emission, defect related luminescence bands with a larger Stokes shift were observed. In the emission spectra of the solid solution films (x=4; 17; 20 at%) the intrinsic emission bands are quenched and only the luminescence of defects (an anion vacancies) was observed. Based on transformation of the luminescence spectra and ns-luminescence decay kinetics, as well as changes in the time-resolved luminescence and luminescence excitation spectra, the relaxation processes in the films of solid solution are discussed. © 2015 Elsevier B.V. All rights reserved.
Keywords: ALUMINA
DEFECTS
HAFNIA
SELF-TRAPPED EXCITON
THIN FILMS
TIME-RESOLVED LUMINESCENCE
ALUMINA
ALUMINUM
ARGON
ATOMIC LAYER DEPOSITION
CHEMICAL VAPOR DEPOSITION
DEFECTS
DEPOSITION
EMISSION SPECTROSCOPY
EXCITED STATES
EXCITONS
HAFNIUM
HAFNIUM OXIDES
LIGHT EMISSION
LUMINESCENCE
POTASSIUM COMPOUNDS
SOLID SOLUTIONS
TEMPERATURE
THIN FILMS
VAPOR DEPOSITION
CHEMICAL VAPOR DEPOSITION REACTORS
HAFNIA
INTRINSIC LUMINESCENCE
LUMINESCENCE DECAY KINETICS
LUMINESCENCE EXCITATION SPECTRA
SELF TRAPPED EXCITONS
TIME-RESOLVED LUMINESCENCE
TIME-RESOLVED LUMINESCENCE SPECTRA
OXIDE FILMS
URI: http://hdl.handle.net/10995/102334
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 84946601313
PURE ID: 605144
b9e4fe7c-175f-4e57-83be-e762d5645f27
ISSN: 222313
DOI: 10.1016/j.jlumin.2015.10.053
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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