Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102333
Title: Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess
Authors: Yakushev, M. V.
Márquez-Prieto, J.
Forbes, I.
Edwards, P. R.
Zhivulko, V. D.
Mudryi, A. V.
Krustok, J.
Martin, R. W.
Issue Date: 2015
Publisher: Institute of Physics Publishing
Citation: Radiative recombination in Cu2ZnSnSe4 thin films with Cu deficiency and Zn excess / M. V. Yakushev, J. Márquez-Prieto, I. Forbes, et al. — DOI 10.1088/0022-3727/48/47/475109 // Journal of Physics D: Applied Physics. — 2015. — Vol. 48. — Iss. 47. — 475109.
Abstract: Thin films of Cu2ZnSnSe4 (CZTSe) with copper deficiency and zinc excess were fabricated at Northumbria University by the selenisation of metallic precursors deposited on Mo/glass and bare glass substrates. Absorption and photoluminescence (PL) measurements were used to examine the film on glass whereas films on Mo/glass were used to produce a solar cell with efficiency of 8.1%. Detailed temperature and excitation intensity analysis of PL spectra allows identification of the main recombination mechanisms as band-to-tail and band-to-band transitions. The latter transition was observed in the spectra from 6 to 300 K. © 2015 IOP Publishing Ltd.
Keywords: CU2ZNSNSE4
PHOTOLUMINESCENCE
SOLAR CELLS
COPPER
GLASS
PHOTOLUMINESCENCE
SELENIUM COMPOUNDS
SOLAR CELLS
SUBSTRATES
TIN COMPOUNDS
ZINC
ABSORPTION AND PHOTOLUMINESCENCE
BAND-TO-BAND TRANSITION
CU2ZNSNSE4
EXCITATION INTENSITY
GLASS SUBSTRATES
METALLIC PRECURSOR
RADIATIVE RECOMBINATION
RECOMBINATION MECHANISMS
THIN FILMS
URI: http://hdl.handle.net/10995/102333
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 84947093699
PURE ID: 555189
e65a2da2-f3ee-4c44-94bd-c7f16b7216f0
ISSN: 223727
DOI: 10.1088/0022-3727/48/47/475109
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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