1. Электронный научный архив УрФУ
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  3. Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC
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dc.contributor.authorZatsepin, D. A.en
dc.contributor.authorZatsepin, A. F.en
dc.contributor.authorBoukhvalov, D. W.en
dc.contributor.authorKurmaev, E. Z.en
dc.contributor.authorPchelkina, Z. V.en
dc.contributor.authorGavrilov, N. V.en
dc.date.accessioned2021-08-31T15:03:09Z-
dc.date.available2021-08-31T15:03:09Z-
dc.date.issued2016-
dc.identifier.citationElectronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing / D. A. Zatsepin, A. F. Zatsepin, D. W. Boukhvalov, et al. — DOI 10.1016/j.jnoncrysol.2015.10.002 // Journal of Non-Crystalline Solids. — 2016. — Vol. 432. — P. 183-188.en
dc.identifier.issn223093-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84951793517&doi=10.1016%2fj.jnoncrysol.2015.10.002&partnerID=40&md5=605974e548767748212d0a772b6b505d
dc.identifier.otherhttp://arxiv.org/pdf/1510.00106m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102322-
dc.description.abstractThe results of XPS core-level and valence band measurements, photoluminescence spectra of a-SiO2 implanted by Zn-ions (E = 30 keV, D = 1 · 1017 cm− 2) and Density Functional Theory calculations of electronic structure as well as formation energies of structural defects in silica glass induced by Zn-ion implantation are presented. Both theory and experiment show that it is energetically more favorable for implanted zinc ions to occupy the interstitial positions instead of cation substitution. As a result, the Zn-ions embedded to interstitials, form chemical bonds with the surrounding oxygen atoms, fabrication ZnO-like nanoparticles and oxygen-deficient SiOx matrix. The subsequent thermal annealing at 900 °C (1 h) strongly reduces the amount of ZnO nanoparticles and induces the formation of secondary α-Zn2SiO4 phase which markedly enhances the green emission. © 2015en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ Non Cryst Solids2
dc.sourceJournal of Non-Crystalline Solidsen
dc.subjectDFT MODELINGen
dc.subjectDOPINGen
dc.subjectPHASE TRANSITIONen
dc.subjectSPECTROSCOPYen
dc.subjectBOND STRENGTH (CHEMICAL)en
dc.subjectDENSITY FUNCTIONAL THEORYen
dc.subjectDOPING (ADDITIVES)en
dc.subjectELECTRONIC STRUCTUREen
dc.subjectGLASSen
dc.subjectIONSen
dc.subjectNANOPARTICLESen
dc.subjectPHASE TRANSITIONSen
dc.subjectPHOTOLUMINESCENCEen
dc.subjectSILICAen
dc.subjectSPECTROSCOPYen
dc.subjectZINCen
dc.subjectZINC OXIDEen
dc.subjectCATION SUBSTITUTIONSen
dc.subjectDFT MODELINGen
dc.subjectFORMATION ENERGIESen
dc.subjectINTERSTITIAL POSITIONSen
dc.subjectPHOTOLUMINESCENCE PROPERTIESen
dc.subjectPHOTOLUMINESCENCE SPECTRUMen
dc.subjectTHERMAL-ANNEALINGen
dc.subjectZNO NANOPARTICLESen
dc.subjectION IMPLANTATIONen
dc.titleElectronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealingen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1016/j.jnoncrysol.2015.10.002-
dc.identifier.scopus84951793517-
local.contributor.employeeZatsepin, D.A., M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 18 Kovalevskoj Str., Yekaterinburg, 620990, Russian Federation, Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeZatsepin, A.F., Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeBoukhvalov, D.W., Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea, Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeKurmaev, E.Z., M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 18 Kovalevskoj Str., Yekaterinburg, 620990, Russian Federation, Institute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federation
local.contributor.employeePchelkina, Z.V., M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 18 Kovalevskoj Str., Yekaterinburg, 620990, Russian Federation, Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeGavrilov, N.V., Institute of Electrophysics, Russian Academy of Sciences-Ural Division, Yekaterinburg, 620016, Russian Federation
local.description.firstpage183-
local.description.lastpage188-
local.volume432-
dc.identifier.wos000367769300002-
local.contributor.departmentM.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 18 Kovalevskoj Str., Yekaterinburg, 620990, Russian Federation
local.contributor.departmentInstitute of Physics and Technology, Ural Federal University, Mira Str. 19, Yekaterinburg, 620002, Russian Federation
local.contributor.departmentDepartment of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, South Korea
local.contributor.departmentTheoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, Yekaterinburg, 620002, Russian Federation
local.contributor.departmentInstitute of Electrophysics, Russian Academy of Sciences-Ural Division, Yekaterinburg, 620016, Russian Federation
local.identifier.pure661064-
local.identifier.eid2-s2.0-84951793517-
local.identifier.wosWOS:000367769300002-
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