Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102299
Title: Stimulated emission and lasing in Cu(In,Ga)Se2 thin films
Authors: Svitsiankou, I. E.
Pavlovskii, V. N.
Lutsenko, E. V.
Yablonskii, G. P.
Mudryi, A. V.
Zhivulko, V. D.
Yakushev, M. V.
Martin, R. W.
Issue Date: 2016
Publisher: Institute of Physics Publishing
Citation: Stimulated emission and lasing in Cu(In,Ga)Se2 thin films / I. E. Svitsiankou, V. N. Pavlovskii, E. V. Lutsenko, et al. — DOI 10.1088/0022-3727/49/9/095106 // Journal of Physics D: Applied Physics. — 2016. — Vol. 49. — Iss. 9. — 095106.
Abstract: Stimulated emission and lasing in Cu(In,Ga)Se2 thin films have been demonstrated at a temperature of 20 K using excitation by a nanosecond pulsed N2 laser with power densities in the range from 2 to 100 kW cm-2. Sharp narrowing of the photoluminescence band, superlinear dependence of its intensity on excitation laser power, as well as stabilization of the spectral position and of the full-width at half-maximum of the band were observed in the films at increasing excitation intensity. The stimulated emission threshold was determined to be 20 kW cm-2. A gain value of 94 cm-1 has been estimated using the variable stripe length method. Several sharp laser modes near 1.13 eV were observed above the laser threshold of I thr ∼ 50 kW cm-2. © 2016 IOP Publishing Ltd.
Keywords: CU(IN,GA)SE2
GAIN
LASING
PHOTOLUMINESCENCE
STIMULATED EMISSION
THRESHOLD
COPPER
GALLIUM
LASER EXCITATION
PHOTOLUMINESCENCE
PULSED LASERS
SEMICONDUCTING SELENIUM COMPOUNDS
STIMULATED EMISSION
ULTRAFAST LASERS
CU (IN ,GA)SE
EXCITATION INTENSITY
GAIN
LASING
PHOTOLUMINESCENCE BANDS
SPECTRAL POSITION
THRESHOLD
VARIABLE STRIPE LENGTHS
THIN FILMS
URI: http://hdl.handle.net/10995/102299
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 84957564784
PURE ID: 656334
00c9cac6-8623-4bbe-9a19-4f2889602791
ISSN: 223727
DOI: 10.1088/0022-3727/49/9/095106
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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