1. Электронный научный архив УрФУ
  2. 00. Общеуниверситетские коллекции
  3. Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC
Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот ресурс: http://elar.urfu.ru/handle/10995/102265
Полная запись метаданных
Поле DCЗначениеЯзык
dc.contributor.authorZatsepin, D. A.en
dc.contributor.authorBoukhvalov, D. W.en
dc.contributor.authorKurmaev, E. Z.en
dc.contributor.authorGavrilov, N. V.en
dc.contributor.authorKim, S. S.en
dc.contributor.authorZhidkov, I. S.en
dc.date.accessioned2021-08-31T15:02:53Z-
dc.date.available2021-08-31T15:02:53Z-
dc.date.issued2016-
dc.identifier.citationPleomorphic structural imperfections caused by pulsed Bi-implantation in the bulk and thin-film morphologies of TiO 2 / D. A. Zatsepin, D. W. Boukhvalov, E. Z. Kurmaev, et al. — DOI 10.1016/j.apsusc.2016.04.045 // Applied Surface Science. — 2016. — Vol. 379. — P. 223-229.en
dc.identifier.issn1694332-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84964330406&doi=10.1016%2fj.apsusc.2016.04.045&partnerID=40&md5=8c56f29ad7be69baa47840808715cb3f
dc.identifier.otherhttp://arxiv.org/pdf/1604.05026m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102265-
dc.description.abstractThe results of combined experimental and theoretical study of pleomorphic substitutional and clustering effects in Bi-doped TiO 2 hosts (bulk and thin-film morphologies) are presented. Bi-doping of the bulk and thin-film titanium dioxide was made with help of pulsed ion-implantation (E Bi + = 30 keV, D = 1 × 10 17 cm -2 ) without posterior tempering. The X-ray photoelectron spectroscopy (XPS) qualification (core-levels and valence bands) and Density-Functional Theory (DFT) calculations were employed in order to study the electronic structure of Bi-ion implanted TiO 2 samples. According to XPS data obtained and DFT calculations, the Bi → Ti cation substitution occurs in Bi-implanted bulk TiO 2 , whereas in the thin-film morphology of TiO 2 :Bi the Bi-atoms have metal-like clusters segregation tendency. Based on the combined XPS and DFT considerations the possible reasons and mechanism for the observed effects are discussed. It is believed that established peculiarities of bismuth embedding into employed TiO 2 hosts are mostly the sequence of pleomorphic origin for the formed "bismuth-oxygen" chemical bonding. © 2016 Elsevier B.V. All rights reserved.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceAppl Surf Sci2
dc.sourceApplied Surface Scienceen
dc.subjectAGGREGATIONen
dc.subjectBISMUTH OXIDEen
dc.subjectDFTen
dc.subjectION IMPLANTATIONen
dc.subjectTITANIUM DIOXIDEen
dc.subjectAGGLOMERATIONen
dc.subjectCHEMICAL BONDSen
dc.subjectDENSITY FUNCTIONAL THEORYen
dc.subjectELECTRONIC STRUCTUREen
dc.subjectION IMPLANTATIONen
dc.subjectIONSen
dc.subjectMORPHOLOGYen
dc.subjectSEMICONDUCTOR DOPINGen
dc.subjectTHIN FILMSen
dc.subjectTITANIUM DIOXIDEen
dc.subjectTITANIUM OXIDESen
dc.subjectX RAY PHOTOELECTRON SPECTROSCOPYen
dc.subjectBISMUTH OXIDESen
dc.subjectCATION SUBSTITUTIONSen
dc.subjectCHEMICAL BONDINGSen
dc.subjectCLUSTERING EFFECTen
dc.subjectDFT CALCULATIONen
dc.subjectSTRUCTURAL IMPERFECTIONSen
dc.subjectTHEORETICAL STUDYen
dc.subjectTHIN FILM MORPHOLOGYen
dc.subjectBISMUTH COMPOUNDSen
dc.titlePleomorphic structural imperfections caused by pulsed Bi-implantation in the bulk and thin-film morphologies of TiO 2en
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1016/j.apsusc.2016.04.045-
dc.identifier.scopus84964330406-
local.contributor.employeeZatsepin, D.A., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620990, Russian Federation, Institute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeBoukhvalov, D.W., Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 04763, South Korea, Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeKurmaev, E.Z., M.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620990, Russian Federation, Institute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeGavrilov, N.V., Institute of Electrophysics, Russian Academy of Sciences, Ural Branch, Yekaterinburg, 620990, Russian Federation
local.contributor.employeeKim, S.S., School of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea
local.contributor.employeeZhidkov, I.S., Institute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.description.firstpage223-
local.description.lastpage229-
local.volume379-
local.contributor.departmentM.N. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620990, Russian Federation
local.contributor.departmentInstitute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.departmentDepartment of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 04763, South Korea
local.contributor.departmentTheoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, Yekaterinburg, 620002, Russian Federation
local.contributor.departmentInstitute of Electrophysics, Russian Academy of Sciences, Ural Branch, Yekaterinburg, 620990, Russian Federation
local.contributor.departmentSchool of Materials Science and Engineering, Inha University, Incheon, 22212, South Korea
local.identifier.pure797211-
local.identifier.purea28fbde1-3b48-4193-97db-cf6d78512645uuid
local.identifier.eid2-s2.0-84964330406-
Располагается в коллекциях:Научные публикации ученых УрФУ, проиндексированные в SCOPUS и WoS CC

Файлы этого ресурса:
Файл Описание РазмерФормат 
2-s2.0-84964330406.pdf416,68 kBAdobe PDFПросмотреть/Открыть
Показать базовое описание ресурса Статистика  Google Scholar





Все ресурсы в архиве электронных ресурсов защищены авторским правом, все права сохранены.