Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102247
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dc.contributor.authorAbdel-Hafiez, M.en
dc.contributor.authorPu, Y. J.en
dc.contributor.authorBrisbois, J.en
dc.contributor.authorPeng, R.en
dc.contributor.authorFeng, D. L.en
dc.contributor.authorChareev, D. A.en
dc.contributor.authorSilhanek, A. V.en
dc.contributor.authorKrellner, C.en
dc.contributor.authorVasiliev, A. N.en
dc.contributor.authorChen, X. -J.en
dc.date.accessioned2021-08-31T15:02:44Z-
dc.date.available2021-08-31T15:02:44Z-
dc.date.issued2016-
dc.identifier.citationImpurity scattering effects on the superconducting properties and the tetragonal-to-orthorhombic phase transition in FeSe / M. Abdel-Hafiez, Y. J. Pu, J. Brisbois, et al. — DOI 10.1103/PhysRevB.93.224508 // Physical Review B. — 2016. — Vol. 93. — Iss. 22. — 224508.en
dc.identifier.issn24699950-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84974695679&doi=10.1103%2fPhysRevB.93.224508&partnerID=40&md5=73bea32962a93cb524d51ad8bab6acf1
dc.identifier.otherhttps://orbi.uliege.be/bitstream/2268/197601/1/Abdel-Hafiez-PRB2016.pdfm
dc.identifier.urihttp://hdl.handle.net/10995/102247-
dc.description.abstractA comprehensive study of the doping dependence of the phase diagram of FeSe-based superconductors is still required due to the lack of a clean and systematic means of doping control. Here, we report on the magneto-optical imaging, thermodynamic and transport properties, as well as in situ angle-resolved photoemission spectroscopy (ARPES) studies of impurity scattering in stoichiometric FeSe single crystals. Co doping at the Fe site is found to decrease the superconducting transition temperature (Tc). The upper critical field and specific heat all indicate a possible multiband superconductivity with strong coupling in the Co-doped system. A remarkable feature in FeSe is that its temperature dependent resistivity exhibits a wide hump at high temperatures, a signature of a crossover from a semiconductinglike behavior to metallic behavior. A structural tetragonal-to-orthorhombic phase transition (Ts) (a consequence of the electronic nematicity) is suppressed by either physical or chemical pressures. Due to the reconstruction of the Fermi surface at Ts, specific heat anomalies at Ts present ΔCp/Ts≈γn, being γn the Sommerfield coefficient at low temperature. This reflect an additional electronic instability in the FeSe1-xSx system. ARPES data between 180 and 282 K indicates the existence of a chemical potential shift with increasing thermal excitations, resulting in a change of the Fermi-surface topology and exhibiting a semimetal behavior. We found that the temperature-induced Lifshitz transition is much higher than the temperature for the nematic order. © 2016 American Physical Society.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys. Rev. B2
dc.sourcePhysical Review Ben
dc.titleImpurity scattering effects on the superconducting properties and the tetragonal-to-orthorhombic phase transition in FeSeen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1103/PhysRevB.93.224508-
dc.identifier.scopus84974695679-
local.contributor.employeeAbdel-Hafiez, M., Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China, Institute of Physics, Goethe University Frankfurt, Frankfurt am Main, 60438, Germany
local.contributor.employeePu, Y.J., Department of Physics and Advanced Materials Laboratory, Fudan University, Shanghai, 200433, China
local.contributor.employeeBrisbois, J., Département de Physique, Université de Liège, Sart Tilman, B-4000, Belgium
local.contributor.employeePeng, R., Department of Physics and Advanced Materials Laboratory, Fudan University, Shanghai, 200433, China
local.contributor.employeeFeng, D.L., Department of Physics and Advanced Materials Laboratory, Fudan University, Shanghai, 200433, China
local.contributor.employeeChareev, D.A., Institute of Experimental Mineralogy, Russian Academy of Sciences, Chernogolovka, Moscow District, 142432, Russian Federation, Institute of Physics and Technology, Ural Federal University, Ekaternburg, 620002, Russian Federation
local.contributor.employeeSilhanek, A.V., Département de Physique, Université de Liège, Sart Tilman, B-4000, Belgium
local.contributor.employeeKrellner, C., Institute of Physics, Goethe University Frankfurt, Frankfurt am Main, 60438, Germany
local.contributor.employeeVasiliev, A.N., Institute of Physics and Technology, Ural Federal University, Ekaternburg, 620002, Russian Federation, Low Temperature Physics and Superconductivity Department, Physics Faculty, M.V. Lomonosov Moscow State University, Moscow, 119991, Russian Federation, National University of Science and Technology MISiS, Moscow, 119049, Russian Federation
local.contributor.employeeChen, X.-J., Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
local.issue22-
local.volume93-
local.contributor.departmentCenter for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
local.contributor.departmentInstitute of Physics, Goethe University Frankfurt, Frankfurt am Main, 60438, Germany
local.contributor.departmentDepartment of Physics and Advanced Materials Laboratory, Fudan University, Shanghai, 200433, China
local.contributor.departmentDépartement de Physique, Université de Liège, Sart Tilman, B-4000, Belgium
local.contributor.departmentInstitute of Experimental Mineralogy, Russian Academy of Sciences, Chernogolovka, Moscow District, 142432, Russian Federation
local.contributor.departmentInstitute of Physics and Technology, Ural Federal University, Ekaternburg, 620002, Russian Federation
local.contributor.departmentLow Temperature Physics and Superconductivity Department, Physics Faculty, M.V. Lomonosov Moscow State University, Moscow, 119991, Russian Federation
local.contributor.departmentNational University of Science and Technology MISiS, Moscow, 119049, Russian Federation
local.identifier.pure1027261-
local.identifier.pure3059c2be-67d0-41ea-a944-bc4fb61800d2uuid
local.description.order224508-
local.identifier.eid2-s2.0-84974695679-
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