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|Title:||XPS and DFT study of pulsed Bi-implantation of bulk and thin-films of ZnO—The role of oxygen imperfections|
|Authors:||Zatsepin, D. A.|
Boukhvalov, D. W.
Gavrilov, N. V.
Kurmaev, E. Z.
Zhidkov, I. S.
|Citation:||XPS and DFT study of pulsed Bi-implantation of bulk and thin-films of ZnO—The role of oxygen imperfections / D. A. Zatsepin, D. W. Boukhvalov, N. V. Gavrilov, et al. — DOI 10.1016/j.apsusc.2016.07.045 // Applied Surface Science. — 2016. — Vol. 387. — P. 1093-1099.|
|Abstract:||An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1 × 10 17 cm −2 fluence, 70 min exposure under Bi-ion beam, E Bi + = 30 keV, pulsed ion-current density of not more than 0.8 mA/cm 2 with a repetition rate of 12.5 Hz). The final samples were qualified by X-ray photoelectron core-level and valence band mapping spectroscopy applying ASTM materials science standard. The spectroscopy data obtained was discussed on the basis of DFT-models for Bi-embedding into ZnO host-matrices. It was established that in the case of direct Bi-impurities insertion into the employed ZnO-host for both studied morphologies neither the only “pure” Bi 2 O 3 -like phase nor the only “pure” Bi-metal will be preferable to appear as a secondary phase. An unfavorability of the large cluster agglomeration of Bi-impurities in ZnO-hosts has been shown and an oxygen 2s electronic states pleomorphizm was surely established. © 2016|
X RAY PHOTOELECTRON SPECTROSCOPY
ION CURRENT DENSITY
THIN FILM MORPHOLOGY
|Appears in Collections:||Научные публикации, проиндексированные в SCOPUS и WoS CC|
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