Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102234
Title: XPS and DFT study of pulsed Bi-implantation of bulk and thin-films of ZnO—The role of oxygen imperfections
Authors: Zatsepin, D. A.
Boukhvalov, D. W.
Gavrilov, N. V.
Kurmaev, E. Z.
Zhidkov, I. S.
Issue Date: 2016
Publisher: Elsevier B.V.
Citation: XPS and DFT study of pulsed Bi-implantation of bulk and thin-films of ZnO—The role of oxygen imperfections / D. A. Zatsepin, D. W. Boukhvalov, N. V. Gavrilov, et al. — DOI 10.1016/j.apsusc.2016.07.045 // Applied Surface Science. — 2016. — Vol. 387. — P. 1093-1099.
Abstract: An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1 × 10 17  cm −2 fluence, 70 min exposure under Bi-ion beam, E Bi +  = 30 keV, pulsed ion-current density of not more than 0.8 mA/cm 2 with a repetition rate of 12.5 Hz). The final samples were qualified by X-ray photoelectron core-level and valence band mapping spectroscopy applying ASTM materials science standard. The spectroscopy data obtained was discussed on the basis of DFT-models for Bi-embedding into ZnO host-matrices. It was established that in the case of direct Bi-impurities insertion into the employed ZnO-host for both studied morphologies neither the only “pure” Bi 2 O 3 -like phase nor the only “pure” Bi-metal will be preferable to appear as a secondary phase. An unfavorability of the large cluster agglomeration of Bi-impurities in ZnO-hosts has been shown and an oxygen 2s electronic states pleomorphizm was surely established. © 2016
Keywords: DFT MODELLING
ION IMPLANTATION
XPS MEASUREMENTS
ZINK OXIDE
ELECTRONIC STRUCTURE
II-VI SEMICONDUCTORS
ION BEAMS
ION IMPLANTATION
IONS
OXYGEN
THIN FILMS
X RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDE
ION CURRENT DENSITY
LARGE CLUSTERS
REPETITION RATE
SECONDARY PHASE
SPECTROSCOPY DATA
THIN FILM MORPHOLOGY
X-RAY PHOTOELECTRONS
XPS MEASUREMENTS
BISMUTH COMPOUNDS
URI: http://hdl.handle.net/10995/102234
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 84978472421
PURE ID: 1053601
191a2c16-1dc1-43f4-af58-bca247e5a6e5
ISSN: 1694332
DOI: 10.1016/j.apsusc.2016.07.045
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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