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dc.contributor.authorMarchenkov, V. V.en
dc.contributor.authorDomozhirova, A. N.en
dc.contributor.authorNaumov, S. V.en
dc.contributor.authorPodgornykh, S. M.en
dc.contributor.authorChistyakov, V. V.en
dc.contributor.authorKorenistov, P. S.en
dc.contributor.authorHuang, J. C. A.en
dc.date.accessioned2021-08-31T15:02:24Z-
dc.date.available2021-08-31T15:02:24Z-
dc.date.issued2020-
dc.identifier.citationElectronic transport features of MoTe2caused by quenching / V. V. Marchenkov, A. N. Domozhirova, S. V. Naumov, et al. — DOI 10.1088/1742-6596/1695/1/012144 // Journal of Physics: Conference Series. — 2020. — Vol. 1695. — Iss. 1. — 012144.en
dc.identifier.issn17426588-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Bronze3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85098882653&doi=10.1088%2f1742-6596%2f1695%2f1%2f012144&partnerID=40&md5=355e823a0876d653008f070eb394681b
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102195-
dc.description.abstractThe electro- and magnetoresistivity of MoTe2 single crystals before and after quenching were measured at temperatures from 1.8 to 300 K and in magnetic fields of up to 9 T. It was demonstrated that quenching can lead to strong changes in values of the electro-and magneresistivity studied as well as in their temperature and field dependences. The peculiarities of these electronic transport characteristics changes were studied in detail. © Published under licence by IOP Publishing Ltd.en
dc.description.sponsorshipThe research was carried out within the state assignment of the Ministry of Education and Science of the Russian Federation (theme “Spin”, No. АААА-А18-118020290104-2), supported in part by RFBR (Project No. 17-52-52008) and the Government of Russian Federation (Decree No. 211, Contract No. 02.A03.21.0006).en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherIOP Publishing Ltden
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceJ. Phys. Conf. Ser.2
dc.sourceJournal of Physics: Conference Seriesen
dc.subjectMOLYBDENUM COMPOUNDSen
dc.subjectNANOSTRUCTURESen
dc.subjectOPTOELECTRONIC DEVICESen
dc.subjectPHOTONICSen
dc.subjectTELLURIUM COMPOUNDSen
dc.subjectELECTRONIC TRANSPORTen
dc.subjectFIELD DEPENDENCEen
dc.subjectQUENCHINGen
dc.titleElectronic transport features of MoTe2caused by quenchingen
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1088/1742-6596/1695/1/012144-
dc.identifier.scopus85098882653-
local.contributor.employeeMarchenkov, V.V., M. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeDomozhirova, A.N., M. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeNaumov, S.V., M. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeePodgornykh, S.M., M. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeChistyakov, V.V., M. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeKorenistov, P.S., M. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.employeeHuang, J.C.A., National Cheng Kung University, Tainan, 70101, Taiwan
local.issue1-
local.volume1695-
local.contributor.departmentM. N. Mikheev Institute of Metal Physics, UB RAS, Ekaterinburg, 620108, Russian Federation
local.contributor.departmentUral Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.departmentNational Cheng Kung University, Tainan, 70101, Taiwan
local.identifier.pure20454147-
local.identifier.pure4985a62e-0557-4af6-80f1-5eb000273f9cuuid
local.description.order012144-
local.identifier.eid2-s2.0-85098882653-
local.fund.rffi17-52-52008-
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