Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/102157
Title: Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals
Authors: Mudryi, A. V.
Yakushev, M. V.
Volkov, V. A.
Zhivulko, V. D.
Borodavchenko, O. M.
Martin, R. W.
Issue Date: 2017
Publisher: Elsevier B.V.
Citation: Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals / A. V. Mudryi, M. V. Yakushev, V. A. Volkov, et al. — DOI 10.1016/j.jlumin.2017.02.014 // Journal of Luminescence. — 2017. — Vol. 186. — P. 123-126.
Abstract: A comparative analysis of free and bound excitons in the photoluminescence (PL) spectra of CuInS2 single crystals grown by the traveling heater (THM) and the chemical vapor transport (CVT) methods is presented. The values of the binding energy of the A free exciton (18.5 and 19.7 meV), determined by measurements of the spectral positions of the ground and excited states, allowed the Bohr radii (3.8 and 3.7 nm), bandgaps (1.5536 and 1.5548 eV) and dielectric constants (10.2 and 9.9) to be calculated for CuInS2 crystals grown by THM and CVT, respectively. © 2017 Elsevier B.V.
Keywords: CUINS2
EXCITONS
PHOTOLUMINESCENCE
BINDING ENERGY
CHEMICAL ANALYSIS
ELECTRONIC PROPERTIES
EXCITONS
PHOTOLUMINESCENCE
SEMICONDUCTOR QUANTUM WELLS
TRANSPORT PROPERTIES
VARIABLE SPEED TRANSMISSIONS
BOUND EXCITON
CHEMICAL VAPOR TRANSPORT
COMPARATIVE ANALYSIS
CUINS2
GROWTH METHOD
MEASUREMENTS OF
PHOTOLUMINESCENCE SPECTRUM
SPECTRAL POSITION
SINGLE CRYSTALS
URI: http://hdl.handle.net/10995/102157
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85013187495
PURE ID: 1616886
fc2a7e93-6eaf-4eca-8665-37b76e1f77a3
ISSN: 222313
DOI: 10.1016/j.jlumin.2017.02.014
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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