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dc.contributor.authorMinkov, G. M.en
dc.contributor.authorRut, O. E.en
dc.contributor.authorSherstobitov, A. A.en
dc.contributor.authorDvoretski, S. A.en
dc.contributor.authorMikhailov, N. N.en
dc.date.accessioned2021-08-31T15:01:59Z-
dc.date.available2021-08-31T15:01:59Z-
dc.date.issued2017-
dc.identifier.citationZeeman splitting of conduction band in HgTe quantum wells near the Dirac point / G. M. Minkov, O. E. Rut, A. A. Sherstobitov, et al. — DOI 10.1016/j.physe.2017.04.023 // Physica E: Low-Dimensional Systems and Nanostructures. — 2017. — Vol. 91. — P. 203-208.en
dc.identifier.issn13869477-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85018789071&doi=10.1016%2fj.physe.2017.04.023&partnerID=40&md5=e43a662a2aa4172724582dc03e399ee4
dc.identifier.otherhttp://arxiv.org/pdf/1606.08614m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102129-
dc.description.abstractThe Zeeman splitting of the conduction band in the HgTe quantum wells both with normal and inverted spectrum has been studied experimentally in a wide electron density range. The simultaneous analysis of the Shubnikov-de Haas (SdH) oscillations in low magnetic fields at different tilt angles and of the shape of the oscillations in moderate magnetic fields gives a possibility to find the ratio of the Zeeman splitting to the orbital one and anisotropy of g-factor. It is shown that the ratios of the Zeeman splitting to the orbital one are close to each other for both types of structures, with a normal and inverted spectrum and they are close enough to the values calculated within kP method. In contrast, the values of g-factor anisotropy in the structures with normal and inverted spectra are strongly different and for both cases differ significantly from the calculated ones. We assume that such disagreement with calculations is a result of the interface inversion asymmetry in the HgTe quantum well, which is not taken into account in the kP calculations. © 2017 Elsevier B.V.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys E2
dc.sourcePhysica E: Low-Dimensional Systems and Nanostructuresen
dc.subjectANISOTROPYen
dc.subjectCONDUCTION BANDSen
dc.subjectMAGNETIC FIELDSen
dc.subjectDIRAC POINTen
dc.subjectELECTRON DENSITY RANGESen
dc.subjectINVERSION ASYMMETRYen
dc.subjectINVERTED SPECTRAen
dc.subjectLOW MAGNETIC FIELDSen
dc.subjectSHUBNIKOV-DE-HAAS OSCILLATIONSen
dc.subjectSIMULTANEOUS ANALYSISen
dc.subjectZEEMAN SPLITTINGSen
dc.subjectSEMICONDUCTOR QUANTUM WELLSen
dc.titleZeeman splitting of conduction band in HgTe quantum wells near the Dirac pointen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1016/j.physe.2017.04.023-
dc.identifier.scopus85018789071-
local.contributor.employeeMinkov, G.M., Institute of Natural Sciences, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeRut, O.E., Institute of Natural Sciences, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeSherstobitov, A.A., Institute of Natural Sciences, Ural Federal University, Ekaterinburg, 620002, Russian Federation, M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federation
local.contributor.employeeDvoretski, S.A., Institute of Semiconductor Physics RAS, Novosibirsk, 630090, Russian Federation
local.contributor.employeeMikhailov, N.N., Institute of Semiconductor Physics RAS, Novosibirsk, 630090, Russian Federation, Novosibirsk State University, Novosibirsk, 630090, Russian Federation
local.description.firstpage203-
local.description.lastpage208-
local.volume91-
local.contributor.departmentInstitute of Natural Sciences, Ural Federal University, Ekaterinburg, 620002, Russian Federation
local.contributor.departmentM.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg, 620137, Russian Federation
local.contributor.departmentInstitute of Semiconductor Physics RAS, Novosibirsk, 630090, Russian Federation
local.contributor.departmentNovosibirsk State University, Novosibirsk, 630090, Russian Federation
local.identifier.pure1817152-
local.identifier.pure089564b9-10cf-448a-a0d0-352f3a14a225uuid
local.identifier.eid2-s2.0-85018789071-
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