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dc.contributor.authorBoukhvalov, D. W.en
dc.contributor.authorZhidkov, I. S.en
dc.contributor.authorKukharenko, A. I.en
dc.contributor.authorSlesarev, A. I.en
dc.contributor.authorZatsepin, A. F.en
dc.contributor.authorCholakh, S. O.en
dc.contributor.authorKurmaev, E. Z.en
dc.date.accessioned2021-08-31T15:01:24Z-
dc.date.available2021-08-31T15:01:24Z-
dc.date.issued2018-
dc.identifier.citationStability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies / D. W. Boukhvalov, I. S. Zhidkov, A. I. Kukharenko, et al. — DOI 10.1016/j.apsusc.2018.02.074 // Applied Surface Science. — 2018. — Vol. 441. — P. 978-983.en
dc.identifier.issn1694332-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85042066272&doi=10.1016%2fj.apsusc.2018.02.074&partnerID=40&md5=3111f86000b3ceac9368ceeeec5448c6
dc.identifier.otherhttp://arxiv.org/pdf/1802.02345m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/102031-
dc.description.abstractTwo different types of boron-doped graphene/copper interfaces synthesized using two different flow rates of Ar through the bubbler containing the boron source were studied. X-ray photoelectron spectra (XPS) and optically stimulated electron emission (OSEE) measurements have demonstrated that boron-doped graphene coating provides a high corrosion resistivity of Cu-substrate with the light traces of the oxidation of carbon cover. The density functional theory calculations suggest that for the case of substitutional (graphitic) boron-defect only the oxidation near boron impurity is energetically favorable and creation of the vacancies that can induce the oxidation of copper substrate is energetically unfavorable. In the case of non-graphitic boron defects oxidation of the area, a nearby impurity is metastable that not only prevent oxidation but makes boron-doped graphene. Modeling of oxygen reduction reaction demonstrates high catalytic performance of these materials. © 2018 Elsevier B.V.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceAppl Surf Sci2
dc.sourceApplied Surface Scienceen
dc.subjectBORONen
dc.subjectDFTen
dc.subjectDOPINGen
dc.subjectGRAPHENEen
dc.subjectINTERFACEen
dc.subjectXPSen
dc.subjectBORONen
dc.subjectCOPPER CORROSIONen
dc.subjectCORROSION RESISTANT COATINGSen
dc.subjectDEFECT DENSITYen
dc.subjectDENSITY FUNCTIONAL THEORYen
dc.subjectDOPING (ADDITIVES)en
dc.subjectELECTROLYTIC REDUCTIONen
dc.subjectELECTRON EMISSIONen
dc.subjectINTERFACES (MATERIALS)en
dc.subjectOXIDATIONen
dc.subjectX RAY PHOTOELECTRON SPECTROSCOPYen
dc.subjectBORON DEFECTSen
dc.subjectBORON-DOPED GRAPHENEen
dc.subjectCOPPER SUBSTRATESen
dc.subjectCORROSION RESISTIVITYen
dc.subjectCU SUBSTRATEen
dc.subjectHIGH CATALYTIC PERFORMANCEen
dc.subjectOXYGEN REDUCTION REACTIONen
dc.subjectX RAY PHOTOELECTRON SPECTRAen
dc.subjectGRAPHENEen
dc.titleStability of boron-doped graphene/copper interface: DFT, XPS and OSEE studiesen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.rsi35514987-
dc.identifier.doi10.1016/j.apsusc.2018.02.074-
dc.identifier.scopus85042066272-
local.contributor.employeeBoukhvalov, D.W., Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 04763, South Korea, Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeZhidkov, I.S., Institute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeKukharenko, A.I., Institute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeSlesarev, A.I., Institute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeZatsepin, A.F., Institute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeCholakh, S.O., Institute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeKurmaev, E.Z., Institute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation, M.N. Mikheev Institute of Metal Physics, Russian Academy of Sciences, Ural Branch, Yekaterinburg, 620108, Russian Federation
local.description.firstpage978-
local.description.lastpage983-
local.volume441-
dc.identifier.wos000427816400111-
local.contributor.departmentDepartment of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 04763, South Korea
local.contributor.departmentTheoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, Yekaterinburg, 620002, Russian Federation
local.contributor.departmentInstitute of Physics and Technology, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.departmentM.N. Mikheev Institute of Metal Physics, Russian Academy of Sciences, Ural Branch, Yekaterinburg, 620108, Russian Federation
local.identifier.pure959e4386-4208-406d-86e9-eae62726c12buuid
local.identifier.pure6509875-
local.identifier.eid2-s2.0-85042066272-
local.identifier.wosWOS:000427816400111-
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