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dc.contributor.authorGao, Q.en
dc.contributor.authorHu, Q.en
dc.contributor.authorJin, L.en
dc.contributor.authorGorev, M. V.en
dc.contributor.authorChezganov, D. S.en
dc.contributor.authorVlasov, E. O.en
dc.contributor.authorZeng, H.en
dc.contributor.authorZhao, L.en
dc.contributor.authorCui, Y.en
dc.contributor.authorXu, Z.en
dc.contributor.authorWei, X.en
dc.date.accessioned2021-08-31T15:00:55Z-
dc.date.available2021-08-31T15:00:55Z-
dc.date.issued2018-
dc.identifier.citationDielectric relaxation and phase transition behavior of (1–x)Pb(Zn1/3Nb2/3)O3-xBaTiO3 binary solid solutions / Q. Gao, Q. Hu, L. Jin, et al. — DOI 10.1016/j.ceramint.2018.07.069 // Ceramics International. — 2018. — Vol. 44. — Iss. 15. — P. 18491-18498.en
dc.identifier.issn2728842-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85050074039&doi=10.1016%2fj.ceramint.2018.07.069&partnerID=40&md5=7f7056f7183d6fa90b700c5d2fe3f00c
dc.identifier.otherhttp://elib.sfu-kras.ru/bitstream/2311/111489/1/wei_manuscript_cerint.pdfm
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101958-
dc.description.abstractDielectric relaxation and phase transition behaviors in (1–x)Pb(Zn1/3Nb2/3)O3-xBaTiO3 (PZN-BT) binary solid solutions have been systematically studied in this paper. All the compositions display a pure pseudo-cubic perovskite structure. As the BT contents increase from 10 mol% to 70 mol%, the phase transition peak becomes broader and broader, accompanying with decreases of ɛm (the maximum dielectric permittivity) and Tm (the temperature corresponds to the ɛm). Nevertheless, an abnormal increase of ɛm and Tm occurs when the BT contents exceeds 70 mol%, forming a “U” shaped curve of the compositional dependence of ɛm and Tm. Moreover, it is indicated from the new glass model fitting results that the characteristic parameter p, which represents the degree of relaxation, also shows a similar “U” shaped variation curve. Similarly, as shown in polarization-electric field loops, both remnant polarizations (Pr) and coercive fields (Ec) display the “U” shaped curve as the BT content changes from 10 mol% to 80 mol%. Finally, according to the similar variation of these key parameters mentioned above, a polarization mismatched model, which describes the destruction and reestablishment of the long range order arrangement in solid solutions composed of two kinds of ferroelectrics, is proposed to illustrate the underlying mechanism. In this PZN-BT system or other similar ABO3-type perovskite relaxors, the competition between the A-O and B-O coupling plays an important role to form the “U” shaped evolution of these key parameters. © 2018en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherElsevier Ltden
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceCeram Int2
dc.sourceCeramics Internationalen
dc.subjectDIELECTRIC RELAXATIONen
dc.subjectPHASE TRANSITIONen
dc.subjectPOLARIZATION MISMATCHen
dc.subject“U”-SHAPED VARIATIONen
dc.subjectCURVE FITTINGen
dc.subjectDIELECTRIC RELAXATIONen
dc.subjectELECTRIC FIELDSen
dc.subjectPERMITTIVITYen
dc.subjectPEROVSKITEen
dc.subjectPHASE TRANSITIONSen
dc.subjectPOLARIZATIONen
dc.subjectTHULIUMen
dc.subjectBINARY SOLID SOLUTIONSen
dc.subjectCOMPOSITIONAL DEPENDENCEen
dc.subjectDEGREE OF RELAXATIONen
dc.subjectDIELECTRIC PERMITTIVITIESen
dc.subjectPEROVSKITE RELAXORSen
dc.subjectPSEUDOCUBIC PEROVSKITE STRUCTURESen
dc.subjectREMNANT POLARIZATIONSen
dc.subjectTRANSITION BEHAVIORen
dc.subjectSOLID SOLUTIONSen
dc.titleDielectric relaxation and phase transition behavior of (1–x)Pb(Zn1/3Nb2/3)O3-xBaTiO3 binary solid solutionsen
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.rsi35747005-
dc.identifier.doi10.1016/j.ceramint.2018.07.069-
dc.identifier.scopus85050074039-
local.contributor.employeeGao, Q., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and In formation Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
local.contributor.employeeHu, Q., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and In formation Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
local.contributor.employeeJin, L., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and In formation Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
local.contributor.employeeGorev, M.V., Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
local.contributor.employeeChezganov, D.S., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federation
local.contributor.employeeVlasov, E.O., School of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federation
local.contributor.employeeZeng, H., State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
local.contributor.employeeZhao, L., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and In formation Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
local.contributor.employeeCui, Y., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and In formation Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
local.contributor.employeeXu, Z., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and In formation Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
local.contributor.employeeWei, X., Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and In formation Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
local.description.firstpage18491-
local.description.lastpage18498-
local.issue15-
local.volume44-
dc.identifier.wos000445993000117-
local.contributor.departmentElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic and In formation Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
local.contributor.departmentKirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
local.contributor.departmentInstitute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
local.contributor.departmentState Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
local.contributor.departmentSchool of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620000, Russian Federation
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local.identifier.pure7759919-
local.identifier.eid2-s2.0-85050074039-
local.identifier.wosWOS:000445993000117-
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