Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/101868
Title: Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu 2 ZnSnSe 4 /Mo/glass
Authors: Sulimov, M. A.
Yakushev, M. V.
Márquez-Prieto, J.
Forbes, I.
Edwards, P. R.
Zhivulko, V. D.
Borodavchenko, O. M.
Mudryi, A. V.
Krustok, J.
Martin, R. W.
Issue Date: 2019
Publisher: Elsevier B.V.
Citation: Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu 2 ZnSnSe 4 /Mo/glass / M. A. Sulimov, M. V. Yakushev, J. Márquez-Prieto, et al. — DOI 10.1016/j.tsf.2019.01.002 // Thin Solid Films. — 2019. — Vol. 672. — P. 146-151.
Abstract: The effect of solar cell processing (including etching in KCN along with deposition of CdS and ZnO) on photoluminescence (PL) spectra and bandgap E g (measured at 4.2 K by photoluminescence excitation) of Cu 2 ZnSnSe 4 films, produced by selenising metallic precursors at 450 °C, 500 °C and 550 °C, was studied. Temperature and excitation intensity analysis of the P1 dominant band in the PL spectra of solar cells suggests that after processing this band still can be assigned to the free-to-bound recombination of free electrons with holes bound at deep acceptor levels influenced by valence band-tails. However processing increased the intensity of P1 and blue shifted it. The strongest effect was observed for the film selenised at 500 °C. For the film selenised at 450 °C the blue shift and increase in the intensity were smaller and only a slight intensity rise was found for the film selenised at 550 °C. The intensity increase we assign to a reduction in the concentration of non-radiative recombination centers on the surface because of the etching and changes in doping due to inter-diffusion of Cd, S, Se and Zn after the deposition of CdS. Such an inter-diffusion depends on the elemental composition of the films defining the chemistry of defects and influencing E g which increased in the film selenised at 500 °C but decreased in the other films. Processing increased the P1 shift rate (j-shift) with excitation power change in all the films demonstrating a higher compensation degree in the solar cells which is consistent with the formation of an interface layer containing new donors Cd Cu . © 2019 Elsevier B.V.
Keywords: COPPER ZINC TIN SELENIDE
OPTICAL SPECTROSCOPY
PHOTOLUMINESCENCE
SELENISATION
SOLAR CELLS
CADMIUM SULFIDE
CADMIUM SULFIDE SOLAR CELLS
DEPOSITION
ETCHING
II-VI SEMICONDUCTORS
LAYERED SEMICONDUCTORS
MOLYBDENUM
PHOTOLUMINESCENCE
SELENIUM COMPOUNDS
SEMICONDUCTOR DOPING
SOLAR CELLS
TIN COMPOUNDS
ZINC OXIDE
COPPER ZINC TIN SELENIDE
ELEMENTAL COMPOSITIONS
NON-RADIATIVE RECOMBINATIONS
OPTICAL SPECTROSCOPY
PHOTO-LUMINESCENCE EXCITATION
PHOTOLUMINESCENCE EXCITATION SPECTRUM
PHOTOLUMINESCENCE SPECTRUM
SELENISATION
COPPER COMPOUNDS
URI: http://hdl.handle.net/10995/101868
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85060095068
PURE ID: 8868444
93974312-7a84-41fb-b1ae-dfba98c801d9
ISSN: 406090
DOI: 10.1016/j.tsf.2019.01.002
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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