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|Spin-orbit splitting of the conduction band in HgTe quantum wells: Role of different mechanisms
|Minkov, G. M.
Aleshkin, V. Y.
Rut, O. E.
Sherstobitov, A. A.
Germanenko, A. V.
Dvoretski, S. A.
Mikhailov, N. N.
|Spin-orbit splitting of the conduction band in HgTe quantum wells: Role of different mechanisms / G. M. Minkov, V. Y. Aleshkin, O. E. Rut, et al. — DOI 10.1016/j.physe.2019.02.007 // Physica E: Low-Dimensional Systems and Nanostructures. — 2019. — Vol. 110. — P. 95-99.
|Spin-orbit splitting of conduction band in HgTe quantum wells was studied experimentally. In order to recognize the role of different mechanisms, we carried out detailed measurements of the Shubnikov-de Haas oscillations in gated structures with a quantum well widths from 8 to 18 nm over a wide range of electron density. With increasing electron density controlled by the gate voltage, splitting of the maximum of the oscillation Fourier spectrum f 0 into two components f 1 and f 2 and the appearance of the low-frequency component f 3 was observed. Our analysis shows that the components f 1 and f 2 are determined by the electron densities n 1 and n 2 in spin-orbit split subbands while the f 3 component results from magneto-intersubband oscillations so that it is determined by the difference between these densities Δn. This allows us to obtain all three values n 1 , n 2 and Δn independently. Comparison of the data obtained with results of self-consistent calculations carried out within the framework of four-band kP model shows that the main contribution to spin-orbit splitting comes from the Bychkov-Rashba effect. Contribution of the interface inversion asymmetry to the splitting of the conduction band turns out to be four-to-five times less than that for the valence band in the same structures. © 2019 Elsevier B.V.
ELECTRON DENSITY MEASUREMENT
ELECTRON TRANSPORT PROPERTIES
SHUBNIKOV DE-HAAS OSCILLATION
SEMICONDUCTOR QUANTUM WELLS
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