Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/101799
Title: Electron-phonon properties, structural stability, and superconductivity of doped antimonene
Authors: Lugovskoi, A. V.
Katsnelson, M. I.
Rudenko, A. N.
Issue Date: 2019
Publisher: American Physical Society
Citation: Lugovskoi A. V. Electron-phonon properties, structural stability, and superconductivity of doped antimonene / A. V. Lugovskoi, M. I. Katsnelson, A. N. Rudenko. — DOI 10.1103/PhysRevB.99.064513 // Physical Review B. — 2019. — Vol. 99. — Iss. 6. — 064513.
Abstract: Antimonene is a recently discovered two-dimensional semiconductor with exceptional environmental stability, high carrier mobility, and strong spin-orbit interactions. In combination with an electric field, the latter provides an additional degree of control over the material's properties because of induced spin splitting. Here, we report on a computational study of electron-phonon coupling and superconductivity in n- and p-doped antimonene, where we pay special attention on the effect of the perpendicular electric field. The range of accessible hole concentrations is significantly limited by the dynamical instability, associated with strong Fermi-surface nesting. At the same time, we find that in the case of electron-doping antimonene remains stable and can be turned into a state with strong electron-phonon coupling, with the mass enhancement factor λ of up to 2.3 at realistic charge carrier concentrations. In this regime, antimonene is expected to be a superconductor with the critical temperature of ≈16 K. Application of bias voltage leads to a considerable modification of the electronic structure, affecting the electron-phonon coupling in antimonene. While these effects are less obvious in the case of electron-doping, the field effect in hole-doped antimonene results in a considerable variation of the critical temperature, depending on bias voltage. © 2019 American Physical Society.
Keywords: BIAS VOLTAGE
ELECTRIC FIELDS
ELECTRON CORRELATIONS
ELECTRONIC STRUCTURE
ELECTRONS
SEMICONDUCTOR DOPING
STABILITY
TEMPERATURE
CRITICAL TEMPERATURES
DYNAMICAL INSTABILITIES
ELECTRON PHONON COUPLINGS
ENVIRONMENTAL STABILITY
HIGH CARRIER MOBILITY
SPIN ORBIT INTERACTIONS
STRUCTURAL STABILITIES
TWO-DIMENSIONAL SEMICONDUCTORS
ELECTRON-PHONON INTERACTIONS
URI: http://hdl.handle.net/10995/101799
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85062489224
PURE ID: 9173423
4b6f7586-54ed-45e9-b15f-87e82d5c98f6
ISSN: 24699950
DOI: 10.1103/PhysRevB.99.064513
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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