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dc.contributor.authorRautert, J.en
dc.contributor.authorShamirzaev, T. S.en
dc.contributor.authorNekrasov, S. V.en
dc.contributor.authorYakovlev, D. R.en
dc.contributor.authorKlenovský, P.en
dc.contributor.authorKusrayev, Y. G.en
dc.contributor.authorBayer, M.en
dc.date.accessioned2021-08-31T14:59:35Z-
dc.date.available2021-08-31T14:59:35Z-
dc.date.issued2019-
dc.identifier.citationOptical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment / J. Rautert, T. S. Shamirzaev, S. V. Nekrasov, et al. — DOI 10.1103/PhysRevB.99.195411 // Physical Review B. — 2019. — Vol. 99. — Iss. 19. — 195411.en
dc.identifier.issn24699950-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85065469100&doi=10.1103%2fPhysRevB.99.195411&partnerID=40&md5=719a472a9d100bf15a8c73769aa4f9df
dc.identifier.otherhttp://arxiv.org/pdf/1904.02508m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101764-
dc.description.abstractThe spin structure and spin dynamics of excitons in an ensemble of (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment, containing both direct and indirect band gap dots, are studied. Time-resolved and spectral selective techniques are used to distinguish between the direct and indirect QDs. The exciton fine structure is studied by means of optical alignment and optical orientation techniques in magnetic fields applied in the Faraday or Voigt geometries. A drastic difference in emission polarization is found for the excitons in the direct QDs involving a Γ-valley electron and the excitons in the indirect QDs contributed by an X-valley electron. We show that in the direct QDs the exciton spin dynamics is controlled by the anisotropic exchange splitting, while in the indirect QDs it is determined by the hyperfine interaction with nuclear field fluctuations. The anisotropic exchange splitting is determined for the direct QD excitons and compared with model calculations. © 2019 American Physical Society.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhys. Rev. B2
dc.sourcePhysical Review Ben
dc.subjectANISOTROPYen
dc.subjectENERGY GAPen
dc.subjectEXCITONSen
dc.subjectNANOCRYSTALSen
dc.subjectSPIN FLUCTUATIONSen
dc.subjectANISOTROPIC EXCHANGE SPLITTINGen
dc.subjectEXCITON FINE STRUCTUREen
dc.subjectEXCITON SPIN DYNAMICSen
dc.subjectHYPERFINE INTERACTIONSen
dc.subjectMODEL CALCULATIONSen
dc.subjectOPTICAL ALIGNMENTSen
dc.subjectOPTICAL ORIENTATIONen
dc.subjectTYPE I BAND ALIGNMENTSen
dc.subjectSEMICONDUCTOR QUANTUM DOTSen
dc.titleOptical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignmenten
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1103/PhysRevB.99.195411-
dc.identifier.scopus85065469100-
local.contributor.employeeRautert, J., Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, 44227, Germany
local.contributor.employeeShamirzaev, T.S., Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation, Ural Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.employeeNekrasov, S.V., Ioffe Institute, Russian Academy of Sciences, St.-Petersburg, 194021, Russian Federation
local.contributor.employeeYakovlev, D.R., Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, 44227, Germany, Ioffe Institute, Russian Academy of Sciences, St.-Petersburg, 194021, Russian Federation
local.contributor.employeeKlenovský, P., Department of Condensed Matter Physics, Faculty of Science, Masaryk University, Kotlářská 267/2, Brno, 61137, Czech Republic, Central European Institute of Technology, Masaryk University, Kamenice 753/5, Brno, 62500, Czech Republic, Czech Metrology Institute, OkruŽní 31, Brno, 63800, Czech Republic
local.contributor.employeeKusrayev, Y.G., Ioffe Institute, Russian Academy of Sciences, St.-Petersburg, 194021, Russian Federation
local.contributor.employeeBayer, M., Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, 44227, Germany, Ioffe Institute, Russian Academy of Sciences, St.-Petersburg, 194021, Russian Federation
local.issue19-
local.volume99-
dc.identifier.wos000467383900003-
local.contributor.departmentExperimentelle Physik 2, Technische Universität Dortmund, Dortmund, 44227, Germany
local.contributor.departmentRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
local.contributor.departmentUral Federal University, Yekaterinburg, 620002, Russian Federation
local.contributor.departmentIoffe Institute, Russian Academy of Sciences, St.-Petersburg, 194021, Russian Federation
local.contributor.departmentDepartment of Condensed Matter Physics, Faculty of Science, Masaryk University, Kotlářská 267/2, Brno, 61137, Czech Republic
local.contributor.departmentCentral European Institute of Technology, Masaryk University, Kamenice 753/5, Brno, 62500, Czech Republic
local.contributor.departmentCzech Metrology Institute, OkruŽní 31, Brno, 63800, Czech Republic
local.identifier.pure017f7e76-11e8-45c0-91b0-52dcf52593b1uuid
local.identifier.pure9819328-
local.description.order195411-
local.identifier.eid2-s2.0-85065469100-
local.identifier.wosWOS:000467383900003-
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