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dc.contributor.authorKomarskiy, A. A.en
dc.contributor.authorKorzhenevskiy, S. R.en
dc.contributor.authorKomarov, N. A.en
dc.date.accessioned2021-08-31T14:59:34Z-
dc.date.available2021-08-31T14:59:34Z-
dc.date.issued2020-
dc.identifier.citationKomarskiy A. A. X-ray sources of nanosecond pulses based on semiconductor opening switch for CT / A. A. Komarskiy, S. R. Korzhenevskiy, N. A. Komarov. — DOI 10.1063/5.0013238 // AIP Conference Proceedings. — 2020. — Vol. 2250. — 020018.en
dc.identifier.isbn9780735420090-
dc.identifier.issn0094243X-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Bronze3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85095123599&doi=10.1063%2f5.0013238&partnerID=40&md5=b1fb516713f2eb65bd896393410f1620
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101762-
dc.description.abstractThis study describes the development of prototype CT scanners with 2 different pulsed X-ray sources. X-ray sources used in this work have a semiconductor opening switch. It is used to generate high voltage pulses and provides pulse repetition frequency up to 5 kHz. The work uses two pulsed X-ray sources, which have different peak voltages and pulse energies. Tomographic sections and 3D images for test objects are obtained, the advantages of pulsed X-ray sources compared to continuous sources are discussed. © 2020 American Institute of Physics Inc.. All rights reserved.en
dc.description.sponsorshiphe research is supported by the Russian Science Foundation (RSF), grant № 18-79-00020.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Institute of Physics Inc.en
dc.relationinfo:eu-repo/grantAgreement/RSF//18-79-00020en
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourceAIP Conf. Proc.2
dc.sourceAIP Conference Proceedingsen
dc.titleX-ray sources of nanosecond pulses based on semiconductor opening switch for CTen
dc.typeConference Paperen
dc.typeinfo:eu-repo/semantics/conferenceObjecten
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1063/5.0013238-
dc.identifier.scopus85095123599-
local.contributor.employeeKomarskiy, A.A., Institute of Electrophysics, Ural Division of the Russian Academy of Sciences, Yekaterinburg, Russian Federation
local.contributor.employeeKorzhenevskiy, S.R., Institute of Electrophysics, Ural Division of the Russian Academy of Sciences, Yekaterinburg, Russian Federation
local.contributor.employeeKomarov, N.A., Institute of Physics and Technology Ural Federal University, Yekaterinburg, Russian Federation
local.volume2250-
dc.identifier.wos000598361200008-
local.contributor.departmentInstitute of Electrophysics, Ural Division of the Russian Academy of Sciences, Yekaterinburg, Russian Federation
local.contributor.departmentInstitute of Physics and Technology Ural Federal University, Yekaterinburg, Russian Federation
local.identifier.pureffbe580e-de08-48e0-955b-9db23e850f0auuid
local.identifier.pure20116847-
local.description.order20018-
local.identifier.eid2-s2.0-85095123599-
local.fund.rsf18-79-00020-
local.identifier.wosWOS:000598361200008-
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