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dc.contributor.authorGerman, R.en
dc.contributor.authorKomleva, E. V.en
dc.contributor.authorStein, P.en
dc.contributor.authorMazurenko, V. G.en
dc.contributor.authorWang, Z.en
dc.contributor.authorStreltsov, S. V.en
dc.contributor.authorAndo, Y.en
dc.contributor.authorVan, Loosdrecht, P. H. M.en
dc.date.accessioned2021-08-31T14:59:32Z-
dc.date.available2021-08-31T14:59:32Z-
dc.date.issued2019-
dc.identifier.citationPhonon mode calculations and Raman spectroscopy of the bulk-insulating topological insulator BiSbTeSe2 / R. German, E. V. Komleva, P. Stein, et al. — DOI 10.1103/PhysRevMaterials.3.054204 // Physical Review Materials. — 2019. — Vol. 3. — Iss. 5. — 054204.en
dc.identifier.issn24759953-
dc.identifier.otherFinal2
dc.identifier.otherAll Open Access, Green3
dc.identifier.otherhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85065976685&doi=10.1103%2fPhysRevMaterials.3.054204&partnerID=40&md5=a2d0969c9c444087b1a39d00824dcf2f
dc.identifier.otherhttp://arxiv.org/pdf/1811.12168m
dc.identifier.urihttp://elar.urfu.ru/handle/10995/101757-
dc.description.abstractThe tetradymite compound BiSbTeSe2 is one of the most bulk-insulating three-dimensional topological insulators, which makes it important in topological insulator research. It is a member of the solid-solution system Bi2-xSbxTe3-ySey, for which the local crystal structure, such as the occupation probabilities of each atomic site, is not well understood. We have investigated the temperature- and polarization-dependent spontaneous Raman scattering in BiSbTeSe2, revealing a much higher number of lattice vibrational modes than predicted by group-theoretical considerations for the space group R3m corresponding to an ideally random solid-solution situation. The density-functional calculations of phonon frequencies show a very good agreement with experimental data for parent material Bi2Te3, where no disorder effects were found. In comparison to Bi2Te3 the stacking disorder in BiSbTeSe2 causes a discrepancy between theory and experiment. Combined analysis of experimental Raman spectra and density-functional-theory-calculated phonon spectra for different types of atomic orders showed coexistence of different sequences of layers in the material and that those with Se in the center and a local order of Se-Bi-Se-Sb-Te are the most favored. © 2019 American Physical Society.en
dc.format.mimetypeapplication/pdfen
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.sourcePhysic. Rev. Mat.2
dc.sourcePhysical Review Materialsen
dc.subjectANTIMONY COMPOUNDSen
dc.subjectCRYSTAL ATOMIC STRUCTUREen
dc.subjectDENSITY FUNCTIONAL THEORYen
dc.subjectELECTRIC INSULATORSen
dc.subjectGROUP THEORYen
dc.subjectPHONONSen
dc.subjectRAMAN SCATTERINGen
dc.subjectSELENIUM COMPOUNDSen
dc.subjectSOLID SOLUTIONSen
dc.subjectTELLURIUM COMPOUNDSen
dc.subjectTOPOLOGICAL INSULATORSen
dc.subjectCOMBINED ANALYSISen
dc.subjectLATTICE VIBRATIONALen
dc.subjectOCCUPATION PROBABILITYen
dc.subjectPARENT MATERIALSen
dc.subjectPHONON FREQUENCIESen
dc.subjectSOLID SOLUTION SYSTEMen
dc.subjectSPONTANEOUS RAMAN SCATTERINGen
dc.subjectSTACKING DISORDERSen
dc.subjectBISMUTH COMPOUNDSen
dc.titlePhonon mode calculations and Raman spectroscopy of the bulk-insulating topological insulator BiSbTeSe2en
dc.typeArticleen
dc.typeinfo:eu-repo/semantics/articleen
dc.typeinfo:eu-repo/semantics/publishedVersionen
dc.identifier.doi10.1103/PhysRevMaterials.3.054204-
dc.identifier.scopus85065976685-
local.contributor.employeeGerman, R., Physics Institute II, University of Cologne, Zülpicher Straße 77, Köln, D-50937, Germany
local.contributor.employeeKomleva, E.V., Institute of Metal Physics, S. Kovalevskoy 18, Ekaterinburg GSP-170, 620219, Russian Federation
local.contributor.employeeStein, P., Physics Institute II, University of Cologne, Zülpicher Straße 77, Köln, D-50937, Germany
local.contributor.employeeMazurenko, V.G., Ural Federal University, Mira Street 19, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeWang, Z., Physics Institute II, University of Cologne, Zülpicher Straße 77, Köln, D-50937, Germany, Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
local.contributor.employeeStreltsov, S.V., Institute of Metal Physics, S. Kovalevskoy 18, Ekaterinburg GSP-170, 620219, Russian Federation, Ural Federal University, Mira Street 19, Ekaterinburg, 620002, Russian Federation
local.contributor.employeeAndo, Y., Physics Institute II, University of Cologne, Zülpicher Straße 77, Köln, D-50937, Germany
local.contributor.employeeVan Loosdrecht, P.H.M., Physics Institute II, University of Cologne, Zülpicher Straße 77, Köln, D-50937, Germany
local.issue5-
local.volume3-
local.contributor.departmentPhysics Institute II, University of Cologne, Zülpicher Straße 77, Köln, D-50937, Germany
local.contributor.departmentInstitute of Metal Physics, S. Kovalevskoy 18, Ekaterinburg GSP-170, 620219, Russian Federation
local.contributor.departmentUral Federal University, Mira Street 19, Ekaterinburg, 620002, Russian Federation
local.contributor.departmentBeijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
local.identifier.pure9818596-
local.identifier.pure318b6ab4-bdee-4a34-ac56-0e304f2558ccuuid
local.description.order054204-
local.identifier.eid2-s2.0-85065976685-
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