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|Title:||Interplay between in-plane and flexural phonons in electronic transport of two-dimensional semiconductors|
|Authors:||Rudenko, A. N.|
Lugovskoi, A. V.
Katsnelson, M. I.
|Publisher:||American Physical Society|
|Citation:||Interplay between in-plane and flexural phonons in electronic transport of two-dimensional semiconductors / A. N. Rudenko, A. V. Lugovskoi, A. Mauri, et al. — DOI 10.1103/PhysRevB.100.075417 // Physical Review B. — 2019. — Vol. 100. — Iss. 7. — 075417.|
|Abstract:||Out-of-plane vibrations are considered as the dominant factor limiting the intrinsic carrier mobility of suspended two-dimensional materials at low carrier concentrations. Anharmonic coupling between in-plane and flexural phonon modes is usually excluded from the consideration. Here we present a theory for electron-phonon scattering, in which the anharmonic coupling between acoustic phonons is systematically taken into account. Our theory is applied to the typical group V two-dimensional semiconductors: hexagonal phosphorus, arsenic, and antimony. We find that the role of the flexural modes is essentially suppressed by their coupling with in-plane modes. At dopings lower than 1012cm-2 the mobility reduction does not exceed 30%, being almost independent of the concentration. Our findings suggest that compared to in-plane phonons, flexural phonons are considerably less important in the electronic transport of two-dimensional semiconductors, even at low carrier concentrations. © 2019 American Physical Society.|
ELECTRON PHONON SCATTERING
|Appears in Collections:||Научные публикации, проиндексированные в SCOPUS и WoS CC|
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