Please use this identifier to cite or link to this item: http://hdl.handle.net/10995/101719
Title: Interplay between in-plane and flexural phonons in electronic transport of two-dimensional semiconductors
Authors: Rudenko, A. N.
Lugovskoi, A. V.
Mauri, A.
Yu, G.
Yuan, S.
Katsnelson, M. I.
Issue Date: 2019
Publisher: American Physical Society
Citation: Interplay between in-plane and flexural phonons in electronic transport of two-dimensional semiconductors / A. N. Rudenko, A. V. Lugovskoi, A. Mauri, et al. — DOI 10.1103/PhysRevB.100.075417 // Physical Review B. — 2019. — Vol. 100. — Iss. 7. — 075417.
Abstract: Out-of-plane vibrations are considered as the dominant factor limiting the intrinsic carrier mobility of suspended two-dimensional materials at low carrier concentrations. Anharmonic coupling between in-plane and flexural phonon modes is usually excluded from the consideration. Here we present a theory for electron-phonon scattering, in which the anharmonic coupling between acoustic phonons is systematically taken into account. Our theory is applied to the typical group V two-dimensional semiconductors: hexagonal phosphorus, arsenic, and antimony. We find that the role of the flexural modes is essentially suppressed by their coupling with in-plane modes. At dopings lower than 1012cm-2 the mobility reduction does not exceed 30%, being almost independent of the concentration. Our findings suggest that compared to in-plane phonons, flexural phonons are considerably less important in the electronic transport of two-dimensional semiconductors, even at low carrier concentrations. © 2019 American Physical Society.
Keywords: CARRIER CONCENTRATION
CARRIER MOBILITY
ACOUSTIC PHONONS
ANHARMONIC COUPLINGS
ELECTRON PHONON SCATTERING
ELECTRONIC TRANSPORT
MOBILITY REDUCTION
OUT-OF-PLANE VIBRATIONS
TWO-DIMENSIONAL MATERIALS
TWO-DIMENSIONAL SEMICONDUCTORS
PHONONS
URI: http://hdl.handle.net/10995/101719
Access: info:eu-repo/semantics/openAccess
SCOPUS ID: 85070612827
PURE ID: 10475707
e96b5d26-2fe4-4a82-b7ce-c2bf4e07d79c
ISSN: 24699950
DOI: 10.1103/PhysRevB.100.075417
Appears in Collections:Научные публикации, проиндексированные в SCOPUS и WoS CC

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